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Erik Bakkers

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Published work

2 published item(s)

preprint2023arXiv

Parity-conserving Cooper-pair transport and ideal superconducting diode in planar Germanium

Superconductor/semiconductor hybrid devices have attracted increasing interest in the past years. Superconducting electronics aims to complement semiconductor technology, while hybrid architectures are at the forefront of new ideas such as topological superconductivity and protected qubits. In this work, we engineer the induced superconductivity in two-dimensional germanium hole gas by varying the distance between the quantum well and the aluminum. We demonstrate a hard superconducting gap and realize an electrically and flux tunable superconducting diode using a superconducting quantum interference device (SQUID). This allows to tune the current phase relation (CPR), to a regime where single Cooper pair tunneling is suppressed, creating a $\sin \left( 2 φ\right)$ CPR. Shapiro experiments complement this interpretation and the microwave drive allows to create a diode with 100% efficiency. The reported results open up the path towards integration of spin qubit devices, microwave resonators and (protected) superconducting qubits on a silicon technology compatible platform.

preprint2012arXiv

Growth and optical properties of axial hybrid III-V/Si nanowires

Hybrid silicon nanowires with an integrated light-emitting segment can significantly advance nanoelectronics and nanophotonics. They would combine transport and optical characteristics in a nanoscale device, which can operate in the fundamental single-electron and single-photon regime. III-V materials, such as direct bandgap gallium-arsenide, are excellent candidates for such optical segments. However, interfacing them with silicon during crystal growth is a major challenge, because of the lattice mismatch, different expansion coefficients and the formation of anti-phase boundaries. Here, we demonstrate a silicon nanowire with an integrated gallium-arsenide segment. We precisely control the catalyst composition and surface chemistry to obtain dislocation-free interfaces. The integration of gallium-arsenide of high optical quality with silicon is enabled by short gallium phosphide buffers. We anticipate that such hybrid silicon/III-V nanowires open practical routes for quantum information devices, where for instance electronic and photonic quantum bits are manipulated in a III-V segment and stored in a silicon section.