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Daniel Chrastina

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cond-mat.mes-hall cond-mat.mtrl-sci quant-ph

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preprint2023arXiv

Parity-conserving Cooper-pair transport and ideal superconducting diode in planar Germanium

Superconductor/semiconductor hybrid devices have attracted increasing interest in the past years. Superconducting electronics aims to complement semiconductor technology, while hybrid architectures are at the forefront of new ideas such as topological superconductivity and protected qubits. In this work, we engineer the induced superconductivity in two-dimensional germanium hole gas by varying the distance between the quantum well and the aluminum. We demonstrate a hard superconducting gap and realize an electrically and flux tunable superconducting diode using a superconducting quantum interference device (SQUID). This allows to tune the current phase relation (CPR), to a regime where single Cooper pair tunneling is suppressed, creating a $\sin \left( 2 φ\right)$ CPR. Shapiro experiments complement this interpretation and the microwave drive allows to create a diode with 100% efficiency. The reported results open up the path towards integration of spin qubit devices, microwave resonators and (protected) superconducting qubits on a silicon technology compatible platform.

preprint2022arXiv

All rf-based tuning algorithm for quantum devices using machine learning

Radio-frequency measurements could satisfy DiVincenzo's readout criterion in future large-scale solid-state quantum processors, as they allow for high bandwidths and frequency multiplexing. However, the scalability potential of this readout technique can only be leveraged if quantum device tuning is performed using exclusively radio-frequency measurements i.e. without resorting to current measurements. We demonstrate an algorithm that automatically tunes double quantum dots using only radio-frequency reflectometry. Exploiting the high bandwidth of radio-frequency measurements, the tuning was completed within a few minutes without prior knowledge about the device architecture. Our results show that it is possible to eliminate the need for transport measurements for quantum dot tuning, paving the way for more scalable device architectures.

preprint2021arXiv

Dynamics of hole singlet triplet qubits with large g-factor differences

The spin-orbit interaction is the key element for electrically tunable spin qubits. Here we probe the effect of cubic Rashba spin-orbit interaction on mixing of the spin states by investigating singlet-triplet oscillations in a planar Ge hole double quantum dot. By varying the magnetic field direction we find an intriguing transformation of the funnel into a butterfly-shaped pattern. Landau-Zener sweeps disentangle the Zeeman mixing effect from the spin-orbit induced coupling and show that large singlet-triplet avoided crossings do not imply a strong spin-orbit interaction. Our work emphasizes the need for a complete knowledge of the energy landscape when working with hole spin qubits.

preprint2015arXiv

Controlling the Electrical Properties of Undoped and Ta-doped TiO2 Polycrystalline Films via Ultra-Fast Annealing Treatments

We present a study on the crystallization process of undoped and Ta doped TiO2 amorphous thin films. In particular, the effect of ultra-fast annealing treatments in environments characterized by different oxygen concentrations is investigated via in-situ resistance measurements. The accurate examination of the key parameters involved in this process allows us to reduce the time needed to obtain highly conducting and transparent polycrystalline thin films (resistivity about $6 \times 10^{-4}$ Ωcm, mean transmittance in the visible range about $81\%$) to just 5 minutes (with respect to the 180 minutes required for a standard vacuum annealing treatment) in nitrogen atmosphere (20 ppm oxygen concentration) at ambient pressure. Experimental evidence of superficial oxygen incorporation in the thin films and its detrimental role for the conductivity are obtained by employing different concentrations of traceable 18O isotopes during ultra-fast annealing treatments. The results are discussed in view of the possible implementation of the ultra-fast annealing process for TiO2-based transparent conducting oxides as well as electron selective layers in solar cell devices; taking advantage of the high control of the ultra-fast crystallization processes which has been achieved, these two functional layers are shown to be obtainable from the crystallization of a single homogeneous thin film.