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Researcher profile

Andrea Ballabio

Andrea Ballabio contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mes-hallphysics.app-phquant-ph

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Published work

4 published item(s)

preprint2023arXiv

Parity-conserving Cooper-pair transport and ideal superconducting diode in planar Germanium

Superconductor/semiconductor hybrid devices have attracted increasing interest in the past years. Superconducting electronics aims to complement semiconductor technology, while hybrid architectures are at the forefront of new ideas such as topological superconductivity and protected qubits. In this work, we engineer the induced superconductivity in two-dimensional germanium hole gas by varying the distance between the quantum well and the aluminum. We demonstrate a hard superconducting gap and realize an electrically and flux tunable superconducting diode using a superconducting quantum interference device (SQUID). This allows to tune the current phase relation (CPR), to a regime where single Cooper pair tunneling is suppressed, creating a $\sin \left( 2 φ\right)$ CPR. Shapiro experiments complement this interpretation and the microwave drive allows to create a diode with 100% efficiency. The reported results open up the path towards integration of spin qubit devices, microwave resonators and (protected) superconducting qubits on a silicon technology compatible platform.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

All rf-based tuning algorithm for quantum devices using machine learning

Radio-frequency measurements could satisfy DiVincenzo's readout criterion in future large-scale solid-state quantum processors, as they allow for high bandwidths and frequency multiplexing. However, the scalability potential of this readout technique can only be leveraged if quantum device tuning is performed using exclusively radio-frequency measurements i.e. without resorting to current measurements. We demonstrate an algorithm that automatically tunes double quantum dots using only radio-frequency reflectometry. Exploiting the high bandwidth of radio-frequency measurements, the tuning was completed within a few minutes without prior knowledge about the device architecture. Our results show that it is possible to eliminate the need for transport measurements for quantum dot tuning, paving the way for more scalable device architectures.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Dynamics of hole singlet triplet qubits with large g-factor differences

The spin-orbit interaction is the key element for electrically tunable spin qubits. Here we probe the effect of cubic Rashba spin-orbit interaction on mixing of the spin states by investigating singlet-triplet oscillations in a planar Ge hole double quantum dot. By varying the magnetic field direction we find an intriguing transformation of the funnel into a butterfly-shaped pattern. Landau-Zener sweeps disentangle the Zeeman mixing effect from the spin-orbit induced coupling and show that large singlet-triplet avoided crossings do not imply a strong spin-orbit interaction. Our work emphasizes the need for a complete knowledge of the energy landscape when working with hole spin qubits.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Strain analysis of Ge micro disk using precession electron diffraction

The recently developed precession electron diffraction (PED) technique in scanning transmission electron microscopy (STEM) has been used to elucidate the local strain distribution and crystalline misorientation in CMOS fabricated strained Ge micro disk structure grown on Si substrate. Such structures are considered to be a compact optical source for the future photonics due to the specific undercut for direct bandgap behaviour under strain. In this study, the strain maps are interpreted and compared with a finite element model (FEM) of the strain in the investigated structure. Results demonstrate that the SiN used as a stressor on top of the Ge disk induces an in-plane strain $ε_{xx}$ of a maximum value of almost 2 % which is also confirmed by FEM simulations. This tensile strain can reduce the difference between the direct and indirect bandgaps leading to direct bandgap radiative transitions, with the potential for applications in strained Ge lasers.

0 citations0 reviewsNo code linkedOpen access