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Researcher profile

Emmanuel Lhuillier

Emmanuel Lhuillier contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mtrl-scicond-mat.mes-hallphysics.opticsphysics.app-ph

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Published work

7 published item(s)

preprint2022arXiv

Anomalous Absorption in Arrays of Metallic Nanoparticles: A Powerful Tool for Quantum Dot Optoelectronics

Periodic arrays of noble metal nanoparticles are emblematic nanostructures in photonics. Their ability to sustain localized surface plasmon resonances has been used throughout the years to demonstrate a variety of passive and active functionalities such as enhanced luminescence in dipolar media and LEDs as well as higher responsivities in photoconductive detectors. Here, we show that additional magnetic resonances, associated with inductive current loops between the nanoparticles and accessible with transverse electric waves, emerge in the limit of dense arrays with subwavelength periods. Moreover, their interplay with the plasmons of the system results in spectrally sharp analogues of electromagnetically induced absorption (EIA). We use these metasurfaces to induce changes and enhancements in the emission, absorption, photoconduction, and polarization properties of active layers of PbS nanocrystals, illustrating the potential of EIA beyond the passive functionalities demonstrated so far in literature.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Evidence for Highly p-type doping and type II band alignment in large scale monolayer WSe2 /Se-terminated GaAs heterojunction grown by Molecular beam epitaxy

Two-dimensional materials (2D) arranged in hybrid van der Waals (vdW) heterostructures provide a route toward the assembly of 2D and conventional III-V semiconductors. Here, we report the structural and electronic properties of single layer WSe2 grown by molecular beam epitaxy on Se-terminated GaAs(111)B. Reflection high-energy electron diffraction images exhibit sharp streaky features indicative of a high-quality WSe2 layer produced via vdW epitaxy. This is confirmed by in-plane x-ray diffraction. The single layer of WSe2 and the absence of interdiffusion at the interface are confirmed by high resolution X-ray photoemission spectroscopy and high-resolution transmission microscopy. Angle-resolved photoemission investigation revealed a well-defined WSe2 band dispersion and a high p-doping coming from the charge transfer between the WSe2 monolayer and the Se-terminated GaAs substrate. By comparing our results with local and hybrid functionals theoretical calculation, we find that the top of the valence band of the experimental heterostructure is close to the calculations for free standing single layer WSe2. Our experiments demonstrate that the proximity of the Se-terminated GaAs substrate can significantly tune the electronic properties of WSe2. The valence band maximum (VBM, located at the K point of the Brillouin zone) presents an upshifts of about 0.56 eV toward the Fermi level with respect to the VBM of WSe2 on graphene layer, which is indicative of high p-type doping and a key feature for applications in nanoelectronics and optoelectronics.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Hybridization and localized flat band in the WSe2/MoSe2 heterobilayer grown by molecular beam epitaxy

Nearly localized moire flat bands in momentum space, arising at particular twist angles, are the key to achieve correlated effects in transition-metal dichalcogenides. Here, we use angle-resolved photoemission spectroscopy (ARPES) to visualize the presence of a flat band near the Fermi level of van der Waals (vdW) WSe2/MoSe2 heterobilayer grown by molecular beam epitaxy. This flat band is localized near the K point of the Brillouin zone and has a width of several hundred meVs. By combining ARPES measurements with density functional theory (DFT) calculations, we confirm the coexistence of different domains, namely the reference 2H stacking without layer misorientation and regions with arbitrary twist angles. For the 2H-stacked heterobilayer, our ARPES results show strong interlayer hybridization effects, further confirmed by complementary micro- Raman spectroscopy measurements. The spin-splitting of the valence band at K is determined to be 470 meV. The valence band maximum (VBM) position of the heterobilayer is located at the Gamma point. The energy difference between the VBM at Gamma and the K point is of -60 meV, which is a stark difference compared to individual 1L WSe2 and 1L WSe2, showing both a VBM at K.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Spontaneous Emission of Vector Vortex Beams

Harnessing the spontaneous emission of incoherent quantum emitters is one of the hallmarks of nano-optics. Yet, an enduring challenge remains-making them emit vector beams, which are complex forms of light associated with fruitful developments in fluorescence imaging, optical trapping and high-speed telecommunications. Vector beams are characterized by spatially varying polarization states whose construction requires coherence properties that are typically possessed by lasers-but not by photons produced by spontaneous emission. Here, we show a route to weave the spontaneous emission of an ensemble of colloidal quantum dots into vector beams. To this end, we use holographic nanostructures that impart the necessary spatial coherence, polarization and topological properties to the light originating from the emitters. We focus our demonstration on vector vortex beams, which are chiral vector beams carrying non-zero orbital angular momentum, and argue that our approach can be extended to other forms of vectorial light.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Infrared narrow band gap nanocrystals: recent progresses relative to imaging and active detection

Current technologies for infrared detection have been based on epitaxially grown semiconductors. Here we review some of the recent developments relative to colloidal nanocrystals and their use as building blocks for the design of low-cost infrared sensors. We focus on HgTe nanocrystals which appear as the only material leading to infrared photoconductivity and ultra-broad spectral tunability: from the visible to the long-wave infrared. We review some of the important results which demonstrated that colloidal nanocrystals can be compatible with air stable operations, fast detection, and strong absorption. We discuss the recent progresses relative to multipixel devices and show results obtained by coupling short-wave infrared nanoparticles with CMOS circuits to achieve video rate VGA format imaging. In particular we present that nanocrystals are a promising material for long range (>150 m) active detection in both continuous wave and pulsed mode with a time resolution down to 10 ns.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Quantum scattering engineering for the reduction of dark current in very long wavelength quantum well infrared photodetector

Dark current is shown to be significantly reduced in quantum well infrared photodetectors in the tunneling regime, i.e. at very low temperature, by shifting the dopant impurity layers away from the central part of the wells. This result confirms that the interwell tunneling current is dominated by charged impurity scattering in usual structures. The experimental results are in good quantitative agreement with the proposed theory. This dark current reduction is pushing further the ultimate performances of quantum well infrared photodetectors for the detection of low infrared photon fluxes. Routes to further improvements are briefly sketched.

0 citations0 reviewsNo code linkedOpen access
preprint2009arXiv

Interface roughness transport in THz quantum cascade detectors

Infrared Detectors based on a Quantum Cascade have been proposed to suppress the dark current which is identified as a limiting factor in Quantum Well Infrared Photodetectors. Those detectors have been mostly designed for the 3-5um and 8-12um range of wavelength. For detector operating in the THz range a complete change of regime of transport is expected since the photon energy is lower than the Longitudinal Optical (LO) phonon energy. Using a two dimensional code of transport we have identified Interface Roughness (IR) as the key interaction in such a structure. We have used scanning transmission electron microscopy (STEM) to evaluate the IR parameters (magnitude of the roughness and mean distance between defects) instead of the classical mobility measurements. Finally, we used these parameters to study their influence on the resistance of the device.

0 citations0 reviewsNo code linkedOpen access