Paper detail

Transport Electronique Dans Les Super Reseaux : Applications Aux Détecteurs Infrarouges à Grandes Longueur D'onde

The low flux infrared imaging needs performant high wavelength detectors. Quantum Well Infrared Photodetectors (QWIP), thanks to the maturity of GaAs, the possibility to adjust the detected wavelength on a large range and to realize large uniform matrix are good candidate for such applications. In order to validate this interest, we have performed an electro-optic characterization of a 15μm sample. These measurements have been used to simulate the performance of a camera based on this QWIP and used in a low infrared photons flux scenario. We predict that this QWIP would succeed. Nevertheless these simulations also underline the detrimental role of the dark current. Thus we have developed a simulation tool based on a hoping approach between localized states, which provide us a better understanding of the transport in these heterostructures. The code has in particular underlines the role plays by the electron -ionized impurities interaction, which make the dark current very sensitive to the doping profile. Using this tool we have designed new structures, with optimized doping profile, in which the scattering rate has been decreased by a factor two. Moreover we have identified a quantum origin to the plateau shape of the I(V) curve. This code is more generally a useful simulation tool for the transport in hétérostructures. The influence of growth defects (non ideal interface and disorder) has been quantized and we have performed the first evaluation of The R0A in a THz QCD. Finally non local transport effects have been investigated. Saw teeth observation on the I(V) curves have been modeled and their influence on the detectivty estimated.