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Researcher profile

Elizaveta Semenova

Elizaveta Semenova contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
physics.app-phphysics.opticscond-mat.mes-hall

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Published work

3 published item(s)

preprint2022arXiv

Electrically-driven Photonic Crystal Lasers with Ultra-low Threshold

Light sources with ultra-low energy consumption and high performance are required to realize optical interconnects for on-chip communication. Photonic crystal (PhC) nanocavity lasers are one of the most promising candidates to fill this role. In this work, we demonstrate an electrically-driven PhC nanolaser with an ultra-low threshold current of 10.2 μA emitting at 1540 nm and operated at room temperature. The lasers are InP-based bonded on Si and comprise a buried heterostructure active region and lateral p-i-n junction. The static characteristics and the thermal properties of the lasers have been characterized. The effect of disorder and p-doping absorption on the Q-factor of passive cavities was studied. We also investigate the leakage current due to the lateral p-i-n geometry by comparing the optical and electrical pumping schemes.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Second-harmonic generation tuning by stretching arrays of GaAs nanowires

We present a wearable device with III-V nanowires in a flexible polymer, which is used for active mechanical tuning of the second-harmonic generation intensity. An array of vertical GaAs nanowires was grown with metalorganic vapour-phase epitaxy, then embedded in polydimethylsiloxane and detached from the rigid substrate with mechanical peel off. Experimental results show a tunability of the second-harmonic generation intensity by a factor of two for 30% stretching which matches the simulations including the distribution of sizes. We studied the impact of different parameters on the band dispersion and tunability of the second-harmonic generation, such as the pitch, the length, and the diameter. We predict at least three orders of magnitude active mechanical tuning of the nonlinear signal intensity for nanowire arrays. The flexibility of the array together with the resonant wavelength engineering make such structures perspective platforms for future bendable or stretchable nanophotonic devices as light sources or sensors.

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preprint2020arXiv

Monolithic integration of InP on Si by molten alloy driven selective area epitaxial growth

We report a new approach for monolithic integration of III-V materials into silicon, based on selective area growth and driven by a molten alloy in metal-organic vapor epitaxy. Our method includes elements of both selective area and droplet-mediated growths and combines the advantages of the two techniques. Using this approach, we obtain organized arrays of high crystalline quality InP insertions into (100) oriented Si substrates. Our detailed structural, morphological and optical studies reveal the conditions leading to defect formation. These conditions are then eliminated to optimize the process for obtaining dislocation-free InP nanostructures grown directly on Si and buried below the top surface. The PL signal from these structures exhibits a narrow peak at the InP bandgap energy. The fundamental aspects of the growth are studied by modeling the InP nucleation process. The model is fitted by our x-ray diffraction measurements and correlates well with the results of our transmission electron microscopy and optical investigations. Our method constitutes a new approach for the monolithic integration of active III-V material into Si platform and opens up new opportunities in active Si photonics.

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