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Kresten Yvind

Kresten Yvind appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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physics.opticscond-mat.mes-hallphysics.app-phquant-ph

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Published work

14 published item(s)

preprint2022arXiv

Electrically-driven Photonic Crystal Lasers with Ultra-low Threshold

Light sources with ultra-low energy consumption and high performance are required to realize optical interconnects for on-chip communication. Photonic crystal (PhC) nanocavity lasers are one of the most promising candidates to fill this role. In this work, we demonstrate an electrically-driven PhC nanolaser with an ultra-low threshold current of 10.2 μA emitting at 1540 nm and operated at room temperature. The lasers are InP-based bonded on Si and comprise a buried heterostructure active region and lateral p-i-n junction. The static characteristics and the thermal properties of the lasers have been characterized. The effect of disorder and p-doping absorption on the Q-factor of passive cavities was studied. We also investigate the leakage current due to the lateral p-i-n geometry by comparing the optical and electrical pumping schemes.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Monolithic integration of InP on Si by molten alloy driven selective area epitaxial growth

We report a new approach for monolithic integration of III-V materials into silicon, based on selective area growth and driven by a molten alloy in metal-organic vapor epitaxy. Our method includes elements of both selective area and droplet-mediated growths and combines the advantages of the two techniques. Using this approach, we obtain organized arrays of high crystalline quality InP insertions into (100) oriented Si substrates. Our detailed structural, morphological and optical studies reveal the conditions leading to defect formation. These conditions are then eliminated to optimize the process for obtaining dislocation-free InP nanostructures grown directly on Si and buried below the top surface. The PL signal from these structures exhibits a narrow peak at the InP bandgap energy. The fundamental aspects of the growth are studied by modeling the InP nucleation process. The model is fitted by our x-ray diffraction measurements and correlates well with the results of our transmission electron microscopy and optical investigations. Our method constitutes a new approach for the monolithic integration of active III-V material into Si platform and opens up new opportunities in active Si photonics.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Squeezing of intensity noise in nanolasers and nanoLEDs

The intensity noise of nanolasers and nanoLEDs is analyzed for conventional and quiet pumping of electrons into the active region. It is shown that nanoLEDs with Purcell-enhanced emission rates, enabled by extreme dielectric confinement, may be excellent sources of intensity-squeezed light within a bandwidth of several gigahertz. The physics of intensity squeezing is elucidated and it is shown that the parameter dependence can be explained by an effective Fano factor.

0 citations0 reviewsNo code linkedOpen access
preprint2018arXiv

Ultra-compact graphene plasmonic photodetector with the bandwidth over 110GHz

Graphene-based photodetectors, taking advantage of high carrier mobility and broadband absorption in graphene, have recently experienced rapid development. However, their performances with respect to the responsivity and bandwidth are still limited by either weak light-graphene interaction or large resistance-capacitance product. Here, we demonstrate a waveguide coupled integrated graphene plasmonic photodetector on the silicon-on-insulator platform. Benefiting from plasmonic enhanced graphene-light interactions and subwavelength confinement of the optical energy, we present a small-footprint graphene-plasmonic photodetector with bandwidth beyond 110GHz and intrinsic responsivity of 360mA/W. Attributed to the unique electronic bandstructure of graphene and its ultra-broadband absorption, the operational wavelength range extending beyond mid-infrared, and possibly further, can be anticipated. Our results show that the combination of graphene with plasmonic devices has great potential to realize ultra-compact and high-speed optoelectronic devices for graphene-based optical interconnects.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

AlGaAs-On-Insulator Nonlinear Photonics

The combination of nonlinear and integrated photonics has recently seen a surge with Kerr frequency comb generation in micro-resonators as the most significant achievement. Efficient nonlinear photonic chips have myriad applications including high speed optical signal processing, on-chip multi-wavelength lasers, metrology, molecular spectroscopy, and quantum information science. Aluminium gallium arsenide (AlGaAs) exhibits very high material nonlinearity and low nonlinear loss when operated below half its bandgap energy. However, difficulties in device processing and low device effective nonlinearity made Kerr frequency comb generation elusive. Here, we demonstrate AlGaAs-on-insulator as a nonlinear platform at telecom wavelengths. Using newly developed fabrication processes, we show high-quality-factor (Q>100,000) micro-resonators with integrated bus waveguides in a planar circuit where optical parametric oscillation is achieved with a record low threshold power of 3 mW and a frequency comb spanning 350 nm is obtained. Our demonstration shows the huge potential of the AlGaAs-on-insulator platform in integrated nonlinear photonics.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Effective electro-optical modulation with high extinction ratio by a graphene-silicon microring resonator

Graphene opens up for novel optoelectronic applications thanks to its high carrier mobility, ultra-large absorption bandwidth, and extremely fast material response. In particular, the opportunity to control optoelectronic properties through tuning of Fermi level enables electro-optical modulation, optical-optical switching, and other optoelectronics applications. However, achieving a high modulation depth remains a challenge because of the modest graphene-light interaction in the graphene-silicon devices, typically, utilizing only a monolayer or few layers of graphene. Here, we comprehensively study the interaction between graphene and a microring resonator, and its influence on the optical modulation depth. We demonstrate graphene-silicon microring devices showing a high modulation depth of 12.5 dB with a relatively low bias voltage of 8.8 V. On-off electro-optical switching with an extinction ratio of 3.8 dB is successfully demonstrated by applying a square-waveform with a 4 V peak-to-peak voltage.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Threshold Characteristics of Slow-Light Photonic Crystal Lasers

The threshold properties of photonic crystal quantum dot lasers operating in the slow-light regime are investigated experimentally and theoretically. Measurements show that, in contrast to conventional lasers, the threshold gain attains a minimum value for a specific cavity length. The experimental results are explained by an analytical theory for the laser threshold that takes into account the effects of slow-light and random disorder due to unavoidable fabrication imperfections. Longer lasers are found to operate deeper into the slow-light region, leading to a trade-off between slow-light induced reduction of the mirror loss and slow-light enhancement of disorder-induced losses.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Fano resonance control in a photonic crystal structure and its application to ultrafast switching

Fano resonances appear in quantum mechanical as well as classical systems as a result of the interference between two paths: one involving a discrete resonance and the other a continuum. Compared to a conventional resonance, characterized by a Lorentzian spectral response, the characteristic asymmetric and sharp spectral response of a Fano resonance is suggested to enable photonic switches and sensors with superior characteristics. While experimental demonstrations of the appearance of Fano resonances have been made in both plasmonic and photonic-crystal structures, the control of these resonances is experimentally challenging, often involving the coupling of near-resonant cavities. Here, we experimentally demonstrate two simple structures that allow surprisingly robust control of the Fano spectrum. One structure relies on controlling the amplitude of one of the paths and the other uses symmetry breaking. Short-pulse dynamic measurements show that besides drastically increasing the switching contrast, the transmission dynamics itself is strongly affected by the nature of the resonance. The influence of slow-recovery tails implied by a long carrier lifetime can thus be reduced using a Fano resonance due to a hitherto unrecognized reshaping effect of the nonlinear Fano transfer function. For the first time, we present a system application of a Fano structure, demonstrating its advantages by the experimental realization of 10 Gbit/s all-optical modulation with bit-error-ratios on the order of 10$^{-7}$ for input powers less than 1 mW. These results represent a significant improvement compared to the use of a conventional Lorentzian resonance.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Hybrid vertical-cavity laser with lateral emission into a silicon waveguide

We experimentally demonstrate an optically-pumped III-V/Si vertical-cavity laser with lateral emission into a silicon waveguide. This on-chip hybrid laser comprises a distributed Bragg reflector, a III-V active layer, and a high-contrast grating reflector, which simultaneously funnels light into the waveguide integrated with the laser. This laser has the advantages of long-wavelength vertical-cavity surface-emitting lasers, such as low threshold and high side-mode suppression ratio, while allowing integration with silicon photonic circuits, and is fabricated using CMOS-compatible processes. It has the potential for ultrahigh-speed operation beyond 100 Gbit/s and features a novel mechanism for transverse mode control.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Nonlinear switching dynamics in a photonic-crystal nanocavity

We measure the nonlinear switching dynamics of an InP photonic crystal nanocavity for different pulse energies and wavelengths relative to the cavity resonance and observe saturation of the switching contrast and broadening of the switching window. The effects are analyzed by comparison with nonlinear coupled mode theory and explained in terms of large dynamical variations of the cavity resonance. The results are important for applications in optical signal processing and provide insight into the nonlinear optical processes that govern the dynamics of the refractive index and the absorption.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Nonreciprocal transmission in a photonic-crystal Fano structure enabled by symmetry breaking

Nanostructures that feature nonreciprocal light transmission are highly desirable building blocks for realizing photonic integrated circuits. Here, a simple and ultra-compact photonic-crystal structure, where a waveguide is coupled to a single nanocavity, is proposed and experimentally demonstrated, showing very efficient optical diode functionality. The key novelty of the structure is the use of a Fano resonance in combination with spatial symmetry breaking and cavity enhanced material nonlinearities to realize non-reciprocal propagation effects at ultra-low power and with a good wavelength tunability. The nonlinearity of the device relies on ultrafast carrier dynamics, rather than the thermal effects usually considered, allowing the demonstration of nonreciprocal operation at a bit-rate of 10 Gbit/s with a low energy consumption of 4.5 fJ/bit.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Slow-light enhanced gain in active photonic crystal waveguides

Slow light is a fascinating physical effect, raising fundamental questions related to our understanding of light-matter interactions as well as offering new possibilities for photonic devices. From the first demonstrations of slow light propagation in ultra-cold atomic gasses, solid-state Ruby and photonic crystal structures, focus has shifted to applications, with slow light offering the ability to enhance and control light-matter interactions. The demonstration of tuneable delay lines, enhanced nonlinearities and spontaneous emission, enlarged spectral sensitivity and increased phase shifts illustrate the possibilities enabled by slow light propagation, with microwave photonics emerging as one of the promising applications. Here, we demonstrate that slow light can be used to control and increase the gain coefficient of an active semiconductor waveguide. The effect was theoretically predicted but not yet experimentally demonstrated. These results show a route towards realizing ultra-compact optical amplifiers for linear and nonlinear applications in integrated photonics and prompts further research into the rich physics of such structures.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Plasmonic modulator based on gain-assisted metal-semiconductor-metal waveguide

We investigate plasmonic modulators with a gain material to be implemented as ultra-compact and ultra-fast active nanodevices in photonic integrated circuits. We analyze metal-semiconductor-metal (MSM) waveguides with InGaAsP-based active material layers as ultra-compact plasmonic modulators. The modulation is achieved by changing the gain of the core that results in different transmittance through the waveguides. A MSM waveguide enables high field localization and therefore high modulation speed. Bulk semiconductor, quantum wells and quantum dots, arranged in either horizontal or vertical layout, are considered as the core of the MSM waveguide. Dependences on the waveguide core size and gain values of various active materials are studied. The designs consider also practical aspects like n- and p-doped layers and barriers in order to obtain results as close to reality. The effective propagation constants in the MSM waveguides are calculated numerically. Their changes in the switching process are considered as a figure of merit. We show that a MSM waveguide with electrical current control of the gain incorporates compactness and deep modulation along with a reasonable level of transmittance.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Nonlinear carrier dynamics in a quantum dash optical amplifier

Results of experimental pump-probe spectroscopy of a quantum dash optical amplifier biased at transparency are presented. Using strong pump pulses we observe a competition between free carrier absorption and two-photon induced stimulated emission that can have drastic effects on the transmission dynamics. Thus, both enhancement as well as suppression of the transmission can be observed even when the amplifier is biased at transparency. A simple theoretical model taking into account two-photon absorption and free carrier absorption is presented that shows good agreement with the measurements.

0 citations0 reviewsNo code linkedOpen access