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Weiqi Xue

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Published work

4 published item(s)

preprint2015arXiv

Threshold Characteristics of Slow-Light Photonic Crystal Lasers

The threshold properties of photonic crystal quantum dot lasers operating in the slow-light regime are investigated experimentally and theoretically. Measurements show that, in contrast to conventional lasers, the threshold gain attains a minimum value for a specific cavity length. The experimental results are explained by an analytical theory for the laser threshold that takes into account the effects of slow-light and random disorder due to unavoidable fabrication imperfections. Longer lasers are found to operate deeper into the slow-light region, leading to a trade-off between slow-light induced reduction of the mirror loss and slow-light enhancement of disorder-induced losses.

preprint2014arXiv

Fano resonance control in a photonic crystal structure and its application to ultrafast switching

Fano resonances appear in quantum mechanical as well as classical systems as a result of the interference between two paths: one involving a discrete resonance and the other a continuum. Compared to a conventional resonance, characterized by a Lorentzian spectral response, the characteristic asymmetric and sharp spectral response of a Fano resonance is suggested to enable photonic switches and sensors with superior characteristics. While experimental demonstrations of the appearance of Fano resonances have been made in both plasmonic and photonic-crystal structures, the control of these resonances is experimentally challenging, often involving the coupling of near-resonant cavities. Here, we experimentally demonstrate two simple structures that allow surprisingly robust control of the Fano spectrum. One structure relies on controlling the amplitude of one of the paths and the other uses symmetry breaking. Short-pulse dynamic measurements show that besides drastically increasing the switching contrast, the transmission dynamics itself is strongly affected by the nature of the resonance. The influence of slow-recovery tails implied by a long carrier lifetime can thus be reduced using a Fano resonance due to a hitherto unrecognized reshaping effect of the nonlinear Fano transfer function. For the first time, we present a system application of a Fano structure, demonstrating its advantages by the experimental realization of 10 Gbit/s all-optical modulation with bit-error-ratios on the order of 10$^{-7}$ for input powers less than 1 mW. These results represent a significant improvement compared to the use of a conventional Lorentzian resonance.

preprint2014arXiv

Hybrid vertical-cavity laser with lateral emission into a silicon waveguide

We experimentally demonstrate an optically-pumped III-V/Si vertical-cavity laser with lateral emission into a silicon waveguide. This on-chip hybrid laser comprises a distributed Bragg reflector, a III-V active layer, and a high-contrast grating reflector, which simultaneously funnels light into the waveguide integrated with the laser. This laser has the advantages of long-wavelength vertical-cavity surface-emitting lasers, such as low threshold and high side-mode suppression ratio, while allowing integration with silicon photonic circuits, and is fabricated using CMOS-compatible processes. It has the potential for ultrahigh-speed operation beyond 100 Gbit/s and features a novel mechanism for transverse mode control.

preprint2014arXiv

Nonreciprocal transmission in a photonic-crystal Fano structure enabled by symmetry breaking

Nanostructures that feature nonreciprocal light transmission are highly desirable building blocks for realizing photonic integrated circuits. Here, a simple and ultra-compact photonic-crystal structure, where a waveguide is coupled to a single nanocavity, is proposed and experimentally demonstrated, showing very efficient optical diode functionality. The key novelty of the structure is the use of a Fano resonance in combination with spatial symmetry breaking and cavity enhanced material nonlinearities to realize non-reciprocal propagation effects at ultra-low power and with a good wavelength tunability. The nonlinearity of the device relies on ultrafast carrier dynamics, rather than the thermal effects usually considered, allowing the demonstration of nonreciprocal operation at a bit-rate of 10 Gbit/s with a low energy consumption of 4.5 fJ/bit.