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Eduardo V. Castro

Eduardo V. Castro appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mes-hallcond-mat.str-elcond-mat.mtrl-scicond-mat.dis-nncond-mat.othercond-mat.supr-concond-mat.quant-gascond-mat.softcond-mat.stat-mech

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Published work

28 published item(s)

preprint2022arXiv

Edge magnetism in transition metal dichalcogenide nanoribbons: Mean field theory and determinant quantum Monte Carlo

Edge magnetism in zigzag transition metal dichalcogenide nanoribbons is studied using a three-band tight-binding model with local electron-electron interactions. Both mean field theory and the unbiased, numerically exact determinant quantum Monte Carlo method are applied. Depending on the edge filling, mean field theory predicts different phases: gapped spin dimer and antiferromagnetic phases appear for two specific fillings, with a tendency towards metallic edge-ferromagnetism away from those fillings. Determinant quantum Monte Carlo simulations confirm the stability of the antiferromagnetic gapped phase at the same edge filling as mean field theory, despite being sign-problematic for other fillings. The obtained results point to edge filling as yet another key ingredient to understand the observed magnetism in nanosheets. Moreover, the filling dependent edge magnetism gives rise to spin-polarized edge currents in zigzag nanoribbons which could be tuned through a back gate voltage, with possible applications to spintronics.

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preprint2022arXiv

Hidden dualities in 1D quasiperiodic lattice models

We find that quasiperiodicity-induced transitions between extended and localized phases in generic 1D systems are associated with hidden dualities that generalize the well-known duality of the Aubry-André model. These spectral and eigenstate dualities are locally defined near the transition and can, in many cases, be explicitly constructed by considering relatively small commensurate approximants. The construction relies on auxiliary 2D Fermi surfaces obtained as functions of the phase-twisting boundary conditions and of the phase-shifting real-space structure. We show that, around the critical point of the limiting quasiperiodic system, the auxiliary Fermi surface of a high-enough-order approximant converges to a universal form. This allows us to devise a highly-accurate method to obtain mobility edges and duality transformations for generic 1D quasiperiodic systems through their commensurate approximants. To illustrate the power of this approach, we consider several previously studied systems, including generalized Aubry-André models and coupled Moiré chains. Our findings bring a new perspective to examine quasiperiodicity-induced extended-to-localized transitions in 1D, provide a working criterion for the appearance of mobility edges, and an explicit way to understand the properties of eigenstates close to and at the transition.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Incommensurability-induced sub-ballistic narrow-band-states in twisted bilayer graphene

We study the localization properties of electrons in incommensurate twisted bilayer graphene for small angles, encompassing the narrow-band regime, by numerically exact means. Sub-ballistic states are found within the narrow-band region around the magic angle. Such states are delocalized in momentum-space and follow non-Poissonian level statistics, in contrast with their ballistic counterparts found for close commensurate angles. Transport results corroborate this picture: for large enough systems, the conductance decreases with system size for incommensurate angles within the sub-ballistic regime. Our results show that incommensurability effects are of crucial importance in the narrow-band regime. The incommensurate nature of a general twist angle must therefore be taken into account for an accurate description of magic-angle twisted bilayer graphene.

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preprint2021arXiv

Interplay of local order and topology in the extended Haldane-Hubbard model

We investigate the ground-state phase diagram of the spinful extended Haldane-Hubbard model on the honeycomb lattice using an exact-diagonalization, mean-field variational approach, and further complement it with the infinite density matrix renormalization group, applied to an infinite honeycomb cylinder. This model, governed by both on-site and nearest-neighbor interactions, can result in two types of insulators with finite local order parameters, either with spin or charge ordering. Moreover, a third one, a topologically nontrivial insulator with nonlocal order, is also manifest. We test expectations of previous analyses in spinless versions asserting that once a local order parameter is formed, the topological characteristics of the ground state, associated with a finite Chern number, are no longer present, resulting in a topologically trivial wave function. Our study confirms this overall picture, and highlights how finite-size effects may result in misleading conclusions on the coexistence of finite local order parameters and nontrivial topology in this model.

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preprint2020arXiv

Ballistic charge transport in twisted bilayer graphene

We study conductance across a twisted bilayer graphene coupled to single-layer graphene leads in two setups: a flake of graphene on top of an infinite graphene ribbon and two overlapping semi-infinite graphene ribbons. We find conductance strongly depends on the angle between the two graphene layers and identify three qualitatively different regimes. For large angles ($θ\gtrsim 10^{\circ}$) there are strong commensurability effects for incommensurate angles the low energy conductance approaches that of two disconnected layers, while sharp conductance features correlate with commensurate angles with small unit cells. For intermediate angles ($3^{\circ}\lesssim θ\lesssim 10^{\circ}$), we find a one-to-one correspondence between certain conductance features and the twist-dependent Van Hove singularities arising at low energies, suggesting conductance measurements can be used to determine the twist angle. For small twist angles ($1^{\circ}\lesssimθ\lesssim 3^{\circ}$), commensurate effects seem to be washed out and the conductance becomes a smooth function of the angle. In this regime, conductance can be used to probe the narrow bands, with vanishing conductance regions corresponding to spectral gaps in the density of states, in agreement with recent experimental findings.

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preprint2019arXiv

Disorder driven multifractality transition in Weyl nodal loops

The effect of short-range disorder in nodal line semimetals is studied by numerically exact means. For arbitrary small disorder, a novel semimetallic phase is unveiled for which the momentum-space amplitude of the ground-state wave function is concentrated around the nodal line and follows a multifractal distribution. At a critical disorder strength, a semimetal to compressible metal transition occurs, coinciding with a multi- to single-fractality transition. The universality class of this critical point is characterized by the correlation length and dynamical exponents. At considerably higher disorder, an Anderson metal-insulator transition takes place. Our results show that the nature of the semimetallic phase in non-clean samples is fundamentally different from a clean nodal semimetal.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Twisted bilayer graphene: low-energy physics, electronic and optical properties

Van der Waals (vdW) heterostructures ---formed by stacking or growing two-dimensional (2D) crystals on top of each other--- have emerged as a new promising route to tailor and engineer the properties of 2D materials. Twisted bilayer graphene (tBLG), a simple vdW structure where the interference between two misaligned graphene lattices leads to the formation of a moiré pattern, is a test bed to study the effects of the interaction and misalignment between layers, key players for determining the electronic properties of these stackings. In this chapter, we present in a pedagogical way the general theory used to describe lattice mismatched and misaligned vdW structures. We apply it to the study of tBLG in the limit of small rotations and see how the coupling between the two layers leads both to an angle dependent renormalization of graphene's Fermi velocity and appearance of low-energy van Hove singularities. The optical response of this system is then addressed by computing the optical conductivity and the dispersion relation of tBLG surface plasmon-polaritons.

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preprint2016arXiv

Anomalous Hall metals from strong disorder in class A systems on partite lattices

Topological matter is a trending topic in condensed matter: From a fundamental point of view it has introduced new phenomena and tools, and for technological applications, it holds the promise of basic stable quantum computing. Similarly, the physics of localization by disorder, an old paradigm of obvious technological importance in the field, continues revealing surprises when new properties of matter appear. This work deals with the localization behavior of electronic systems based on partite lattices with special attention to the role of topology. We find an unexpected result from the point of view of localization properties: A robust topological metallic state characterized by a non--quantized Hall conductivity arises from strong disorder in class A (time reversal symmetry broken) insulators. The key issue is the nature of the disorder realization: selective disorder in only one sublattice in systems based on bipartite lattices. The generality of the result is based on the partite nature of most recent 2D materials as graphene or transition metal dichalcogenides, and the possibility of the physical realization of the particular disorder demonstrated in ref. 1. An anomalous Hall metal arises also when the original clean insulator is topologically trivial.

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preprint2016arXiv

Strain induced topological phase transition at zigzag edges of monolayer transition-metal dichalcogenides

The effect of strain in zigzag ribbons of monolayer transition-metal dichalcogenides with induced superconductivity is studied using a minimal 3-band tight-binding model. The unstrained system shows a topological phase with Majorana zero modes localized at the boundaries of the one-dimensional (1D) zigzag edges. By direct inspection of the spectrum and wave functions we examine the evolution of the topological phase as an in-plane, uniaxial deformation is imposed. It is found that strain shifts the energy of 1D edge states, thus causing a topological phase transition which eliminates the Majorana modes. For realistic parameter values, we show that the effect of strain can be changed from completely destructive -- in which case a small built in strain is enough to destroy the topological phase -- to a situation where strain becomes an effective tuning parameter which can be used to manipulate Majorana zero modes. These two regimes are accessible by increasing the value of the applied Zeeman field within realistic values. We also study how strain effects are affected by the chemical potential, showing in particular how unwanted effects can be minimized. Finally, as a cross-check of the obtained results, we reveal the connection between 1D Majorana zero modes in the zigzag edge and the multi-band Berry phase, which serves as a topological invariant of this system.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Strain manipulation of Majorana fermions in graphene

The functionalized graphene with induced superconductivity, Zeeman coupling, and finite Rashba spin-orbit coupling is proposed to display topological superconducting phases with Majorana end modes. We obtain the phase diagram of bulk graphene and nanoribbon by calculating the Chern number, band structure and wavefunction. The electron doping in graphene, magnetic field and strain-induced pseudomagnetic field can result in the topological phase transition. Moreover, it is interested to note that strain has negative influence on the stability of topological nontrivial phase either uniform or nonuniform, destroying the existence of Majorana fermion, which provides a new way to transfer, create and fuse Majorana fermions. Some experimental schemes are also introduced to tailor functionalized graphene, generating various devices applied in topological quantum computation.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Anderson localization and topological transition in Chern insulators

We analyse the topological transition and localization evolution of disordered two dimensional systems with non trivial topology based on bipartite lattices. Chern insulators with broken time reversal symmetry show non standard behavior for disorder realizations selectively distributed on only one of the sublattices. The Chern number survives to a much stronger disorder strength (one order of magnitude higher) than in the equally distributed disordered case and the final state in the strongly disordered case is metallic.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Chern band insulators in magnetic field

The effect of a magnetic field on a two-dimensional Chern band insulator is discussed. It is shown that, unlike the trivial insulator, an anomalous Hall insulator with Chern number $C$ becomes a metal when a magnetic field is applied at constant particle density, for any $C>0$. For a time reversal invariant topological insulator with a spin Chern resolved number, $C_\uparrow= - C_\downarrow=C$, the magnetic field induces a spin polarized spin Hall insulator. We consider also the effect of a superlattice potential and extend previous results for the quantization of the Hall conductance of filled Hofstadter bands to this problem.

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preprint2013arXiv

Hall conductivity as bulk signature of topological transitions in superconductors

Topological superconductors may undergo transitions between phases with different topological numbers which, like the case of topological insulators, are related to the presence of gapless (Majorana) edge states. In $\mathbb{Z}$ topological insulators the charge Hall conductivity is quantized, being proportional to the number of gapless states running at the edge. In a superconductor, however, charge is not conserved and, therefore, $σ_{xy}$ is not quantized, even in the case of a $\mathbb{Z}$ topological superconductor. Here it is shown that while the $σ_{xy}$ evolves continuously between different topological phases of a $\mathbb{Z}$ topological superconductor, its derivatives display sharp features signaling the topological transitions. We consider in detail the case of a triplet superconductor with p-wave symmetry in the presence of Rashba spin-orbit (SO) coupling and externally applied Zeeman spin splitting. Generalization to the cases where the pairing vector is not aligned with that of the SO coupling is given. We generalize also to the cases where the normal system is already topologically non-trivial.

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preprint2013arXiv

Interaction driven phases in the honeycomb lattice from exact diagonalization

We investigate the fate of interaction driven phases in the half-filled honeycomb lattice for finite systems via exact diagonalization with nearest and next nearest neighbour interactions. We find evidence for a charge density wave phase, a Kekulé bond order and a sublattice charge modulated phase in agreement with previously reported mean-field phase diagrams. No clear sign of an interaction driven Chern insulator phase (Haldane phase) is found despite being predicted by the same mean-field analysis. We characterize these phases by their ground state degeneracy and by calculating charge order and bond order correlation functions.

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preprint2012arXiv

Change of an insulator's topological properties by a Hubbard interaction

We introduce two dimensional fermionic band models with two orbitals per lattice site, or one spinful orbital, and which have a non-zero topological Chern number that can be changed by varying the ratio of hopping parameters. A topologically non-trivial insulator is then realized if there is one fermion per site. When interactions in the framework of the Hubbard model are introduced, the effective hopping parameters are renormalized and the system's topological number can change at a certain interaction strength, $U=\bar U$, smaller than that for the Mott transition. Two different situations may then occur: either the anomalous Hall conductivity $σ_{xy}$ changes abruptly at $\bar U$, as the system undergoes a transition from one topologically non-trivial insulator to another, or the transition is through an anomalous Hall metal, and $σ_{xy}$ changes smoothly between two different quantized values as $U$ grows. Restoring time-reversal symmetry by adding spin to spinless models, the half-filled system becomes a $\mathbb{Z}_2$ topological insulator. The topological number $ν$ then changes at a critical coupling $\bar U$ and the quantized spin Hall response changes abruptly.

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preprint2012arXiv

Charge instabilities and topological phases in the extended Hubbard model on the honeycomb lattice with enlarged unit cell

We study spontaneous symmetry breaking in a system of spinless fermions in the Honeycomb lattice paying special emphasis to the role of an enlarged unit cell on time reversal symmetry broken phases. We use a tight binding model with nearest neighbor hopping t and Hubbard interaction V1 and V2 and extract the phase diagram as a function of electron density and interaction within a mean field variational approach. The analysis completes the previous work done in Phys. Rev. Lett. 107, 106402 (2011) where phases with non--trivial topological properties were found with only a nearest neighbor interaction V1 in the absence of charge decouplings. We see that the topological phases are suppressed by the presence of metallic charge density fluctuations. The addition of next to nearest neighbor interaction V2 restores the topological non-trivial phases.

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preprint2012arXiv

Scattering by flexural phonons in suspended graphene under back gate induced strain

We have studied electron scattering by out-of-plane (flexural) phonon modes in doped suspended graphene and its effect on charge transport. In the free-standing case (absence of strain) the flexural branch shows a quadratic dispersion relation, which becomes linear at long wavelength when the sample is under tension due to the rotation symmetry breaking. In the non-strained case, scattering by flexural phonons is the main limitation to electron mobility. This picture changes drastically when strains above $\bar{u}=10^{-4} n(10^{12}\,\text{cm}^{-2})$ are considered. Here we study in particular the case of back gate induced strain, and apply our theoretical findings to recent experiments in suspended graphene.

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preprint2012arXiv

Vacancy induced zero energy modes in graphene stacks: The case of ABC trilayer

The zero energy modes induced by vacancies in ABC stacked trilayer graphene are investigated. Depending on the position of the vacancy, a new zero energy solution is realised, different from those obtained in multilayer compounds with Bernal stacking. The electronic modification induced in the sample by the new vacancy states is characterised by computing the local density of states and their localisation properties are studied by the inverse participation ratio. We also analyse the situation in the presence of a gap in the spectrum due to a perpendicular electric field.

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preprint2011arXiv

Temperature dependent resistivity in bilayer graphene due to flexural phonons

We have studied electron scattering by out-of-plane (flexural) phonons in doped suspended bilayer graphene. We have found the bilayer membrane to follow the qualitative behavior of the monolayer cousin. In the bilayer, different electronic structure combine with different electron-phonon coupling to give the same parametric dependence in resistivity, and in particular the same temperature $T$ behavior. In parallel with the single layer, flexural phonons dominate the phonon contribution to resistivity in the absence of strain, where a density independent mobility is obtained. This contribution is strongly suppressed by tension, and in-plane phonons become the dominant contribution in strained samples. Among the quantitative differences an important one has been identified: room $T$ mobility in bilayer graphene is substantially higher than in monolayer. The origin of quantitative differences has been unveiled.

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preprint2011arXiv

The role of pressure on the magnetism of bilayer graphene

We study the effect of pressure on the localized magnetic moments induced by vacancies in bilayer graphene in the presence of topological defects breaking the bipartite nature of the lattice. By using a mean-field Hubbard model we address the two inequivalent types of vacancies that appear in the Bernal stacking bilayer graphene. We find that by applying pressure in the direction perpendicular to the layers the critical value of the Hubbard interaction needed to polarize the system decreases. The effect is particularly enhanced for one type of vacancies, and admits straightforward generalization to multilayer graphene in Bernal stacking and graphite. The present results clearly demonstrate that the magnetic behavior of multilayer graphene can be affected by mechanical transverse deformation.

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preprint2011arXiv

Topological Fermi liquids from Coulomb interactions in the doped Honeycomb lattice

We get an anomalous Hall metallic state in the Honeycomb lattice with nearest neighbors only arising as a spontaneously broken symmetry state from a local nearest neighbor Coulomb interaction V . The key ingredient is to enlarge the unit cell to host six atoms that permits Kekulé distortions and supports self-consistent currents creating non trivial magnetic configurations with total zero flux. We find within a variational mean field approach a metallic phase with broken time reversal symmetry (T) very close in parameter space to a Pomeranchuk instability. Within the T broken region the predominant configuration is an anomalous Hall phase with non zero Hall conductivity, a realization of a topological Fermi liquid. A T broken phase with zero Hall conductivity is stable in a small region of the parameter space for lower values of V .

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preprint2010arXiv

A new type of vacancy-induced localized states in multilayer graphene

We demonstrate the existence of a new type of zero energy state associated to vacancies in multilayer graphene that has a finite amplitude over the layer with a vacancy and adjacent layers, and the peculiarity of being quasi-localized in the former and totally delocalized in the adjacent ones. In a bilayer, when a gap is induced in the system by applying a perpendicular electric field, these states become truly localized with a normalizable wavefunction. A transition from a localized to an extended state can be tuned by the external gate for experimentally accessible values of parameters.

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preprint2010arXiv

Bilayer graphene: gap tunability and edge properties

Bilayer graphene -- two coupled single graphene layers stacked as in graphite -- provides the only known semiconductor with a gap that can be tuned externally through electric field effect. Here we use a tight binding approach to study how the gap changes with the applied electric field. Within a parallel plate capacitor model and taking into account screening of the external field, we describe real back gated and/or chemically doped bilayer devices. We show that a gap between zero and midinfrared energies can be induced and externally tuned in these devices, making bilayer graphene very appealing from the point of view of applications. However, applications to nanotechnology require careful treatment of the effect of sample boundaries. This being particularly true in graphene, where the presence of edge states at zero energy -- the Fermi level of the undoped system -- has been extensively reported. Here we show that also bilayer graphene supports surface states localized at zigzag edges. The presence of two layers, however, allows for a new type of edge state which shows an enhanced penetration into the bulk and gives rise to band crossing phenomenon inside the gap of the biased bilayer system.

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preprint2010arXiv

Electronic properties of a biased graphene bilayer

We study, within the tight-binding approximation, the electronic properties of a graphene bilayer in the presence of an external electric field applied perpendicular to the system -- \emph{biased bilayer}. The effect of the perpendicular electric field is included through a parallel plate capacitor model, with screening correction at the Hartree level. The full tight-binding description is compared with its 4-band and 2-band continuum approximations, and the 4-band model is shown to be always a suitable approximation for the conditions realized in experiments. The model is applied to real biased bilayer devices, either made out of SiC or exfoliated graphene, and good agreement with experimental results is found, indicating that the model is capturing the key ingredients, and that a finite gap is effectively being controlled externally. Analysis of experimental results regarding the electrical noise and cyclotron resonance further suggests that the model can be seen as a good starting point to understand the electronic properties of graphene bilayer. Also, we study the effect of electron-hole asymmetry terms, as the second-nearest-neighbor hopping energies $t'$ (in-plane) and $γ_{4}$ (inter-layer), and the on-site energy $Δ$.

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preprint2010arXiv

Quantum quench dynamics and population inversion in bilayer graphene

The gap in bilayer graphene (BLG) can directly be controlled by a perpendicular electric field. By tuning the field through zero at a finite rate in neutral BLG, excited states are produced. Due to screening, the resulting dynamics is determined by coupled non-linear Landau-Zener models. The generated defect density agrees with Kibble-Zurek theory in the presence of subleading logarithmic corrections. After the quench, population inversion occurs for wavevectors close to the Dirac point. This could, at least in principle provide a coherent source of infra-red radiation with tunable spectral properties (frequency and broadening). Cold atoms with quadratic band crossing exhibit the same dynamics.

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preprint2010arXiv

Substitutional disorder and charge localization in manganites

In the manganites $RE_{1-x}AE_{x}$MnO$_{3}$ ($RE$ and $AE$ being rare-earth and alkaline-earth elements, respectively) the random distribution of $RE^{3+}$ and $AE^{2+}$ induces random, but correlated, shifts of site energies of charge carriers in the Mn sites. We consider a realistic model of this diagonal disorder, in addition to the double-exchange hopping disorder, and investigate the metal-insulator transition as a function of temperature, across the paramagnetic-ferromagnetic line, and as a function of doping $x$. Contrary to previous results, we find that values of parameters, estimated from the electronic structure of the manganites, are not incompatible with the possibility of a disorder induced metal to insulator transition accompanying the ferromagnetic to paramagnetic transition at intermediate doping ($x\sim0.2-0.4$). These findings indicate clearly that substitutional disorder has to be considered as an important effect when addressing the colossal magnetoresistance properties of manganites.

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preprint2009arXiv

Valley symmetry breaking in bilayer graphene: a test to the minimal model

Physical properties reflecting valley asymmetry of Landau levels in a biased bilayer graphene under magnetic field are discussed. Within the $4-$band continuum model with Hartree-corrected self-consistent gap and finite damping factor we predict the appearance of anomalous steps in quantized Hall conductivity due to the degeneracy lifting of Landau levels. Moreover, the valley symmetry breaking effect appears as a non-semiclassical de Haas-van Alphen effect where the reduction of the oscillation period to half cannot be accounted for through quasi-classical quantization of the orbits in reciprocal space, still valley degenerate.

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