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Douglas Natelson

Douglas Natelson appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mes-hallcond-mat.str-elcond-mat.mtrl-scicond-mat.supr-conphysics.optics

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Published work

22 published item(s)

preprint2025arXiv

Spin Seebeck Effect in Correlated Antiferromagnetic V2O3

The spin Seebeck effect is useful for probing the spin correlations and magnetic order in magnetic insulators. Here, we report a strong longitudinal spin Seebeck effect (LSSE) in antiferromagnetic V2O3 thin films. The LSSE response at cryogenic temperatures increases as a function of the external magnetic field until it approaches saturation. The response at given power and field exhibits a non-monotonic temperature dependence, with a pronounced peak that shifts toward higher temperatures as the field increases. Furthermore, the magnitude of the LSSE signal decreases consistently with increasing thickness, implying that the bulk SSE dominates any interfacial contribution. This negative correlation between the SSE and the thickness implies that the magnon energy relaxation length in V2O3 is shorter than the thickness of our thinnest film, 50 nm, consistent with the strong spin-lattice coupling in this material.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Tunneling spectroscopy of c-axis epitaxial cuprate junctions

Atomically precise epitaxial structures are unique systems for tunneling spectroscopy that minimize extrinsic effects of disorder. We present a systematic tunneling spectroscopy study, over a broad doping, temperature, and bias range, in epitaxial c-axis La$_{2-x}$Sr$_{x}$CuO$_{4}$/La$_{2}$CuO$_{4}$/La$_{2-x}$Sr$_{x}$CuO$_{4}$ heterostructures. The behavior of these superconductor/insulator/superconductor (SIS) devices is unusual. Down to 20 mK there is complete suppression of c-axis Josephson critical current with a barrier of only 2 nm of La$_{2}$CuO$_{4}$, and the zero-bias conductance remains at 20-30% of the normal-state conductance, implying a substantial population of in-gap states. Tunneling spectra show greatly suppressed coherence peaks. As the temperature is raised, the superconducting gap fills in rather than closing at $T_{c}$. For all doping levels, the spectra show an inelastic tunneling feature at $\sim$ 80 meV, suppressed as $T$ exceeds $T_{c}$. These nominally simple epitaxial cuprate junctions deviate markedly from expectations based on the standard Bardeen-Cooper-Schrieffer (BCS) theory.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Current noise enhancement: channel mixing and possible nonequilibrium phonon backaction in atomic-scale Au junctions

We report measurements of the bias dependence of the Fano factor in ensembles of atomic-scale Au junctions at 77 K. Previous measurements of shot noise at room temperature and low biases have found good agreement of the Fano factor with the expectations of the Landauer- Büttiker formalism, while enhanced Fano factors have been observed at biases of hundreds of mV [R. Chen et al., Sci. Rep. 4, 4221 (2014)]. We find even stronger enhancement of shot noise at 77 K with an "excess" Fano factor up to ten times the low bias value. We discuss the observed ensemble Fano factor bias dependence in terms of candidate models. The results are most consistent with either a bias-dependent channel mixing picture or a model incorporating noise enhancement due to current-driven, nonequilibrium phonon populations, though a complete theoretical treatment of the latter in the ensemble average limit is needed.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Interplay of bias-driven charging and the vibrational Stark effect in molecular junctions

We observe large, reversible, bias driven changes in the vibrational energies of PCBM, based on simultaneous transport and surface-enhanced Raman spectroscopy (SERS) measurements on PCBM-gold junctions. A combination of linear and quadratic shifts in vibrational energies with voltage is analyzed and compared with similar measurements involving C60-gold junctions. A theoretical model based on density functional theory (DFT) calculations suggests that both a vibrational Stark effect and bias-induced charging of the junction contribute to the shifts in vibrational energies. In the PCBM case, a linear vibrational Stark effect is observed due to the permanent electric dipole moment of PCBM. The vibrational Stark shifts shown here for PCBM junctions are comparable to or larger than the charging effects that dominate in C60 junctions.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Plasmon-assisted photoresponse in Ge-coated bowtie nanojunctions

We demonstrate plasmon-enhanced photoconduction in Au bowtie nanojunctions containing nanogaps overlaid with an amorphous Ge film. The role of plasmons in the production of nanogap photocurrent is verified by studying the unusual polarization dependence of the photoresponse. With increasing Ge thickness, the nanogap polarization of the photoresponse rotates 90 degrees, indicating a change in the dominant relevant plasmon mode, from the resonant transverse plasmon at low thicknesses to the nonresonant "lightning rod" mode at higher thicknesses. To understand the plasmon response in the presence of the Ge overlayer and whether the Ge degrades the Au plasmonic properties, we investigate the photothermal response (from the temperature-dependent Au resistivity) in no-gap nanowire structures, as a function of Ge film thickness and nanowire geometry. The film thickness and geometry dependence are modeled using a cross-sectional, finite element simulation. The no-gap structures and the modeling confirm that the striking change in nanogap polarization response results from redshifting of the resonant transverse mode, rather than degradation in the Au/Ge properties. We note remaining challenges in determining the precise mechanism of photocurrent production in the nanogap structures.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Thickness-Dependent and Magnetic-Field-Driven Suppression of Antiferromagnetic Order in Thin V$_{5}$S$_{8}$ Single Crystals

With materials approaching the 2d limit yielding many exciting systems with intriguing physical properties and promising technological functionalities, understanding and engineering magnetic order in nanoscale, layered materials is generating keen interest. One such material is V$_{5}$S$_{8}$, a metal with an antiferromagnetic ground state below the Néel temperature $T_{N} \sim$ 32 K and a prominent spin-flop signature in the magnetoresistance (MR) when $H||c \sim$ 4.2 T. Here we study nanoscale-thickness single crystals of V$_{5}$S$_{8}$, focusing on temperatures close to $T_{N}$ and the evolution of material properties in response to systematic reduction in crystal thickness. Transport measurements just below $T_{N}$ reveal magnetic hysteresis that we ascribe to a metamagnetic transition, the first-order magnetic field-driven breakdown of the ordered state. The reduction of crystal thickness to $\sim$ 10 nm coincides with systematic changes in the magnetic response: $T_{N}$ falls, implying that antiferromagnetism is suppressed; and while the spin-flop signature remains, the hysteresis disappears, implying that the metamagnetic transition becomes second order as the thickness approaches the 2d limit. This work demonstrates that single crystals of magnetic materials with nanometer thicknesses are promising systems for future studies of magnetism in reduced dimensionality and quantum phase transitions.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Hydrogen Diffusion and Stabilization in Single-crystal VO2 Micro/nanobeams by Direct Atomic Hydrogenation

We report measurements of the diffusion of atomic hydrogen in single crystalline VO2 micro/nanobeams by direct exposure to atomic hydrogen, without catalyst. The atomic hydrogen is generated by a hot filament, and the doping process takes place at moderate temperature (373 K). Undoped VO2 has a metal-to-insulator phase transition at ~340 K between a high-temperature, rutile, metallic phase and a low-temperature, monoclinic, insulating phase with a resistance exhibiting a semiconductor-like temperature dependence. Atomic hydrogenation results in stabilization of the metallic phase of VO2 micro/nanobeams down to 2 K, the lowest point we could reach in our measurement setup. Based on observing the movement of the hydrogen diffusion front in single crystalline VO2 beams, we estimate the diffusion constant for hydrogen along the c-axis of the rutile phase to be 6.7 x 10^{-10} cm^2/s at approximately 373 K, exceeding the value in isostructural TiO2 by ~ 38x. Moreover, we find that the diffusion constant along the c-axis of the rutile phase exceeds that along the equivalent a-axis of the monoclinic phase by at least three orders of magnitude. This remarkable change in kinetics must originate from the distortion of the "channels" when the unit cell doubles along this direction upon cooling into the monoclinic structure. Ab initio calculation results are in good agreement with the experimental trends in the relative kinetics of the two phases. This raises the possibility of a switchable membrane for hydrogen transport.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

In situ diffraction study of catalytic hydrogenation of VO2: Stable phases and origins of metallicity

Controlling electronic population through chemical doping is one way to tip the balance between competing phases in materials with strong electronic correlations. Vanadium dioxide exhibits a first-order phase transition at around 338 K between a high temperature, tetragonal, metallic state (T) and a low temperature, monoclinic, insulating state (M1), driven by electron-electron and electron-lattice interactions. Intercalation of VO2 with atomic hydrogen has been demonstrated, with evidence that this doping suppresses the transition. However, the detailed effects of intercalated H on the crystal and electronic structure of the resulting hydride have not been previously reported. Here we present synchrotron and neutron diffraction studies of this material system, mapping out the structural phase diagram as a function of temperature and hydrogen content. In addition to the original T and M1 phases, we find two orthorhombic phases, O1 and O2, which are stabilized at higher hydrogen content. We present density functional calculations that confirm the metallicity of these states and discuss the physical basis by which hydrogen stabilizes conducting phases, in the context of the metal-insulator transition.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Nanostructure Investigations of Nonlinear Differential Conductance in NdNiO$_3$ Thin Films

Transport measurements on thin films of NdNiO$_3$ reveal a crossover to a regime of pronounced nonlinear conduction below the well-known metal-insulator transition temperature. The evolution of the transport properties at temperatures well below this transition appears consistent with a gradual formation of a gap in the hole-like Fermi surface of this strongly correlated system. As $T$ is decreased below the nominal transition temperature, transport becomes increasily non-Ohmic, with a model of Landau-Zener breakdown becoming most suited for describing $I(V)$ characteristics as the temperature approaches 2~K.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Shot noise variation within ensembles of gold atomic break junctions at room temperature

Atomic-scale junctions are a powerful tool to study quantum transport, and are frequently examined through the mechanically controllable break junction technique (MCBJ). The junction-to-junction variation of atomic configurations often leads to a statistical approach, with ensemble-averaged properties providing access to the relevant physics. However, the full ensemble contains considerable additional information. We report a new analysis of shot noise over entire ensembles of junction configurations using scanning tunneling microscope (STM)-style gold break junctions at room temperature in ambient conditions, and compare this data with simulations based on molecular dynamics (MD), a sophisticated tight-binding model, and nonequilibrium Green's functions. The experimental data show a suppression in the variation of the noise near conductances dominated by fully transmitting channels, and a surprising participation of multiple channels in the nominal tunneling regime. Comparison with the simulations, which agree well with published work at low temperatures and ultrahigh vacuum (UHV) conditions, suggests that these effects likely result from surface contamination and disorder in the electrodes. We propose additional experiments that can distinguish the relative contributions of these factors.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Thermally Driven Analog of the Barkhausen Effect at the Metal-Insulator Transition in Vanadium Dioxide

The physics of the metal-insulator transition (MIT) in vanadium dioxide remains a subject of intense interest. Because of the complicating effects of elastic strain on the phase transition, there is interest in comparatively strain-free means of examining VO2 material properties. We report contact-free, low-strain studies of the MIT through an inductive bridge approach sensitive to the magnetic response of VO2 powder. Rather than observing the expected step-like change in susceptibility at the transition, we argue that the measured response is dominated by an analog of the Barkhausen effect, due to the extremely sharp jump in the magnetic response of each grain as a function of time as the material is cycled across the phase boundary. This effect suggests that future measurements could access the dynamics of this and similar phase transitions.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Thermoplasmonics: Quantifying plasmonic heating in single nanowires

Plasmonic absorption of light can lead to significant local heating in metallic nanostructures, an effect that defines the sub-field of thermoplasmonics and has been leveraged in diverse applications from biomedical technology to optoelectronics. Quantitatively characterizing the resulting local temperature increase can be very challenging in isolated nanostructures. By measuring the optically-induced change in resistance of metal nanowires with a transverse plasmon mode, we quantitatively determine the temperature increase in single nanostructures, with the dependence on incident polarization clearly revealing the plasmonic heating mechanism. Computational modeling explains the resonant and nonresonant contributions to the optical heating and the dominant pathways for thermal transport. These results, obtained by combining electronic and optical measurements, place a bound on the role of optical heating in prior experiments, and suggest design guidelines for engineered structures meant to leverage such effects.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Dark plasmons in hot spot generation and polarization in interelectrode nanoscale junctions

Nanoscale gaps between adjacent metallic nanostructures give rise to extraordinarily large field enhancements, known as "hot spots", upon illumination. Incident light with the electric field polarized across the gap (along the interparticle axis) is generally known to induce the strongest surface enhanced Raman spectroscopy (SERS) enhancements. However, here we show that for a nanogap located within a nanowire linking extended Au electrodes, the greatest enhancement and resulting SERS emission occurs when the electric field of the incident light is polarized along the gap (transverse to the interelectrode axis). This surprising and counterintuitive polarization dependence results from a strong dipolar plasmon mode that resonates transversely across the nanowire, coupling with dark multipolar modes arising from subtle intrinsic asymmetries in the nanogap. These modes give rise to highly reproducible SERS enhancements at least an order of magnitude larger than the longitudinal modes in these structures.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Strongly Correlated Materials

Strongly correlated materials are profoundly affected by the repulsive electron-electron interaction. This stands in contrast to many commonly used materials such as silicon and aluminum, whose properties are comparatively unaffected by the Coulomb repulsion. Correlated materials often have remarkable properties and transitions between distinct, competing phases with dramatically different electronic and magnetic orders. These rich phenomena are fascinating from the basic science perspective and offer possibilities for technological applications. This article looks at these materials through the lens of research performed at Rice University. Topics examined include: Quantum phase transitions and quantum criticality in "heavy fermion" materials and the iron pnictide high temperature superconductors; computational ab initio methods to examine strongly correlated materials and their interface with analytical theory techniques; layered dichalcogenides as example correlated materials with rich phases (charge density waves, superconductivity, hard ferromagnetism) that may be tuned by composition, pressure, and magnetic field; and nanostructure methods applied to the correlated oxides VO2 and Fe3O4, where metal-insulator transitions can be manipulated by doping at the nanoscale or driving the system out of equilibrium. We conclude with a discussion of the exciting prospects for this class of materials.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Transport Characterization of Kondo-Correlated Single Molecule Devices

A single molecule break junction device serves as a tunable model system for probing the many body Kondo state. The low-energy properties of this state are commonly described in terms of a Kondo model, where the response of the system to different perturbations is characterized by a single emergent energy scale, k_B*T_K. Comparisons between different experimental systems have shown issues with numerical consistency. With a new constrained analysis examining the dependence of conductance on temperature, bias, and magnetic field simultaneously, we show that these deviations can be resolved by properly accounting for background, non-Kondo contributions to the conductance that are often neglected. We clearly demonstrate the importance of these non-Kondo conduction channels by examining transport in devices with total conductances exceeding the theoretical maximum due to Kondo-assisted tunneling alone.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Field enhancement in subnanometer metallic gaps

Motivated by recent experiments [Ward et al., Nature Nanotech. 5, 732 (2010)], we present here a theoretical analysis of the optical response of sharp gold electrodes separated by a subnanometer gap. In particular, we have used classical finite difference time domain simulations to investigate the electric field distribution in these nanojunctions upon illumination. Our results show a strong confinement of the field within the gap region, resulting in a large enhancement compared to the incident field. Enhancement factors exceeding 1000 are found for interelectrode distances on the order of a few angstroms, which are fully compatible with the experimental findings. Such huge enhancements originate from the coupling of the incident light to the evanescent field of hybrid plasmons involving charge density oscillations in both electrodes.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

In Situ Imaging of the Conducting Filament in a Silicon Oxide Resistive Switch

The nature of the conducting filaments in many resistive switching systems has been elusive. Through in situ transmission electron microscopy, we image the real-time formation and evolution of the filament in a silicon oxide resistive switch. The electroforming process is revealed to involve the local enrichment of silicon from the silicon oxide matrix. Semi-metallic silicon nanocrystals with structural variations from the conventional diamond cubic form of silicon are observed, which likely accounts for the conduction in the filament. The growth and shrinkage of the silicon nanocrystals in response to different electrical stimuli show energetically viable transition processes in the silicon forms, offering evidence to the switching mechanism. The study here also provides insights into the electrical breakdown process in silicon oxide layers, which are ubiquitous in a host of electronic devices.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Optical Rectification and Field Enhancement in a Plasmonic Nanogap

Metal nanostructures act as powerful optical antennas[1, 2] because collective modes of the electron fluid in the metal are excited when light strikes the surface of the nanostructure. These excitations, known as plasmons, can have evanescent electromagnetic fields that are orders of magnitude larger than the incident electromagnetic field. The largest field enhancements often occur in nanogaps between plasmonically active nanostructures[3, 4], but it is extremely challenging to measure the fields in such gaps directly. These enhanced fields have applications in surface-enhanced spectroscopies[5-7], nonlinear optics[1, 8-10], and nanophotonics[11-15]. Here we show that nonlinear tunnelling conduction between gold electrodes separated by a subnanometre gap leads to optical rectification, producing a DC photocurrent when the gap is illuminated. Comparing this photocurrent with low frequency conduction measurements, we determine the optical frequency voltage across the tunnelling region of the nanogap, and also the enhancement of the electric field in the tunnelling region, as a function of gap size. The measured field enhancements exceed 1000, consistent with estimates from surface-enhanced Raman measurements[16-18]. Our results highlight the need for more realistic theoretical approaches that are able to model the electromagnetic response of metal nanostructures on scales ranging from the free space wavelength, $λ$, down to $\sim λ/1000$, and for experiments with new materials, different wavelengths, and different incident polarizations.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Plasmons in nanoscale metal junctions: optical rectification and thermometry

We use simultaneous electronic transport and optical characterization measurements to reveal new information about electronic and optical processes in nanoscale junctions fabricated by electromigration. Comparing electronic tunneling and photocurrents allows us to infer the optical frequency potential difference produced by the plasmon response of the junction. Together with the measured tunneling conductance, we can then determine the locally enhanced electric field within the junction. In similar structures containing molecules, anti-Stokes and Stokes Raman emission allow us to infer the effective local vibrational and electronic temperatures as a function of DC current, examining heating and dissipation on the nanometer scale.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Vibrational and electronic heating in nanoscale junctions

Understanding and controlling the flow of heat is a major challenge in nanoelectronics. When a junction is driven out of equilibrium by light or the flow of electric charge, the vibrational and electronic degrees of freedom are, in general, no longer described by a single temperature[1-6]. Moreover, characterizing the steady-state vibrational and electronic distributions {\it in situ} is extremely challenging. Here we show that surface-enhanced Raman emission may be used to determine the effective temperatures for both the vibrational modes and the flowing electrons in a biased metallic nanoscale junction decorated with molecules[7]. Molecular vibrations show mode-specific pumping by both optical excitation[8] and dc current[9], with effective temperatures exceeding several hundred Kelvin. AntiStokes electronic Raman emission\cite[10,11] indicates electronic effective temperature also increases to as much as three times its no-current values at bias voltages of a few hundred mV. While the precise effective temperatures are model-dependent, the trends as a function of bias conditions are robust, and allow direct comparisons with theories of nanoscale heating.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Anomalous Transport and Possible Phase Transition in Palladium Nanojunctions

Many phenomena in condensed matter are thought to result from competition between different ordered phases. Palladium is a paramagnetic metal close to both ferromagnetism and superconductivity, and is therefore a potentially interesting material to consider. Nanoscale structuring of matter can modify relevant physical energy scales leading to effects such as locally modified magnetic interactions. We present transport measurements in electromigrated palladium break junction devices showing the emergence at low temperatures of anomalous sharp features in the differential conductance. These features appear symmetrically in applied bias and exhibit a temperature dependence of their characteristic voltages reminiscent of a mean field phase transition. The systematic variation of these voltages with zero-bias conductance, together with density functional theory calculations illustrating the relationship between the magnetization of Pd and atomic coordination, suggest that the features may result from the onset of spontaneous magnetization in the nanojunction electrodes. We propose that the characteristic conductance features are related to inelastic tunneling involving magnetic excitations.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Kondo Resonances in Molecular Devices

Molecular electronic devices currently serve as a platform for studying a variety of physical phenomena only accessible at the nanometer scale. One such phenomenon is the highly correlated electronic state responsible for the Kondo effect, manifested here as a "Kondo resonance" in the conductance. Because the Kondo effect results from strong electron-electron interactions, it is not captured by the usual quantum chemistry approaches traditionally applied to understand chemical electron transfer. In this review we will discuss the origins and phenomenology of Kondo resonances observed in single molecule devices, focusing primarily on the spin-1/2 Kondo state arising from a single unpaired electron. We explore the rich physical system of a single-molecule device, which offers a unique spectroscopic tool for investigating the interplay of emergent Kondo behavior and such properties as molecular orbital transitions and vibrational modes. We will additionally address more exotic systems, such as higher spin states in the Kondo regime, and we will review recent experimental advances in the ability to manipulate and exert control over these nanoscale devices.

0 citations0 reviewsNo code linkedOpen access