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Dmitry Ruzmetov

Dmitry Ruzmetov appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mtrl-sci

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Published work

3 published item(s)

preprint2010arXiv

Hall carrier density and magnetoresistance measurements in thin film vanadium dioxide across the metal-insulator transition

Temperature dependent magneto-transport measurements in magnetic fields of up to 12 Tesla were performed on thin film vanadium dioxide (VO2) across the metal-insulator transition (MIT). The Hall carrier density increases by 4 orders of magnitude at the MIT and accounts almost entirely for the resistance change. The Hall mobility varies little across the MIT and remains low, ~0.1cm2/V sec. Electrons are found to be the major carriers on both sides of the MIT. Small positive magnetoresistance in the semiconducting phase is measured.

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preprint2010arXiv

The dynamics of magnetic vortex states in a single permalloy nanoparticle

We demonstrate a novel method allowing the study of the magnetic state dynamics of a single nanoparticle by means of electron transport measurements. Elliptical 550 nm x 240 nm permalloy nanoparticles are wired with non-magnetic leads for magnetotransport measurements in the presence of a radio-frequency (RF) field. Their resistance exhibits sharp jumps due to the anisotropic magnetoresistance even at room temperature. An RF field induces DC voltage across the nanoparticle which can be partially depleted at a certain RF frequency when a magnetic vortex core resonance is present. An application of an additional DC magnetic field eliminates the vortex and reinstates the unperturbed DC voltage level. The vortex core resonance frequencies are found and the smallest resonance widths are estimated to be less than 6 MHz.

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preprint2010arXiv

Three-terminal field effect devices utilizing thin film vanadium oxide as the channel layer

Electrostatic control of the metal-insulator transition (MIT) in an oxide semiconductor could potentially impact the emerging field of oxide electronics. Vanadium dioxide is of particular interest due to the fact that the MIT happens in the vicinity of room temperature and it is considered to exhibit the Mott transition. We present a detailed account of our experimental investigation into three-terminal field effect transistor-like devices using thin film VO2 as the channel layer. The gate is separated from the channel through an insulating gate oxide layer, enabling true probing of the field effect with minimal or no interference from large leakage currents flowing directly from the electrode. The influence of the fabrication of multiple components of the device, including the gate oxide deposition, on the VO2 film characteristics is discussed. Further, we discuss the effect of the gate voltage on the device response, point out some of the unusual characteristics including temporal dependence. A reversible unipolar modulation of the channel resistance upon the gate voltage is demonstrated for the first time in optimally engineered devices. The results presented in this work are of relevance towards interpreting gate voltage response in such oxides as well as addressing challenges in advancing gate stack processing for oxide semiconductors.

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