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Venkatesh Narayanamurti

Venkatesh Narayanamurti appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mtrl-sci cond-mat.mes-hall

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preprint2010arXiv

Hall carrier density and magnetoresistance measurements in thin film vanadium dioxide across the metal-insulator transition

Temperature dependent magneto-transport measurements in magnetic fields of up to 12 Tesla were performed on thin film vanadium dioxide (VO2) across the metal-insulator transition (MIT). The Hall carrier density increases by 4 orders of magnitude at the MIT and accounts almost entirely for the resistance change. The Hall mobility varies little across the MIT and remains low, ~0.1cm2/V sec. Electrons are found to be the major carriers on both sides of the MIT. Small positive magnetoresistance in the semiconducting phase is measured.

preprint2010arXiv

Three-terminal field effect devices utilizing thin film vanadium oxide as the channel layer

Electrostatic control of the metal-insulator transition (MIT) in an oxide semiconductor could potentially impact the emerging field of oxide electronics. Vanadium dioxide is of particular interest due to the fact that the MIT happens in the vicinity of room temperature and it is considered to exhibit the Mott transition. We present a detailed account of our experimental investigation into three-terminal field effect transistor-like devices using thin film VO2 as the channel layer. The gate is separated from the channel through an insulating gate oxide layer, enabling true probing of the field effect with minimal or no interference from large leakage currents flowing directly from the electrode. The influence of the fabrication of multiple components of the device, including the gate oxide deposition, on the VO2 film characteristics is discussed. Further, we discuss the effect of the gate voltage on the device response, point out some of the unusual characteristics including temporal dependence. A reversible unipolar modulation of the channel resistance upon the gate voltage is demonstrated for the first time in optimally engineered devices. The results presented in this work are of relevance towards interpreting gate voltage response in such oxides as well as addressing challenges in advancing gate stack processing for oxide semiconductors.

preprint2007arXiv

Probing energy barriers and quantum confined states of buried semiconductor heterostructures with ballistic carrier injection: An experimental study

A three-terminal spectroscopy that probes both subsurface energy barriers and interband optical transitions in a semiconductor heterostructure is demonstrated. A metal-base transistor with a unipolar p-type semiconductor collector embedding InAs/GaAs quantum dots (QDs) is studied. Using minority/majority carrier injection, ballistic electron emission spectroscopy and its related hot-carrier scattering spectroscopy measures barrier heights of a buried AlxGa1-xAs layer in conduction band and valence band respectively, the band gap of Al0.4Ga0.6As is therefore determined as 2.037 +/- 0.009 eV at 9 K. Under forward collector bias, interband electroluminescence is induced by the injection of minority carriers with sub-bandgap kinetic energies. Three emission peaks from InAs QDs, InAs wetting layer, and GaAs are observed in concert with minority carrier injection.