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Researcher profile

Dirk Fuchs

Dirk Fuchs contributes to research discovery and scholarly infrastructure.

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cond-mat.str-elcond-mat.mtrl-scicond-mat.mes-hall

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Published work

4 published item(s)

preprint2022arXiv

Direct observation of strong anomalous Hall effect and proximity-induced ferromagnetic state in SrIrO3

The 5d iridium-based transition metal oxides have gained broad interest because of their strong spin-orbit coupling which favors new or exotic quantum electronic states. On the other hand, they rarely exhibit more mainstream orders like ferromagnetism due to generally weak electron-electron correlation strength. Here, we show a proximity-induced ferromagnetic (FM) state with TC = 100 K and strong magnetocrystalline anisotropy in a SrIrO3 (SIO) heterostructure via interfacial charge transfer by using a ferromagnetic insulator in contact with SIO. Electrical transport allows to selectively probe the FM state of the SIO layer and the direct observation of a strong, intrinsic and positive anomalous Hall effect (AHE). For T < 20 K, the AHE displays unusually large coercive and saturation field, a fingerprint of a strong pseudospin-lattice coupling. A Hall angle, sxyAHE/sxx, larger by an order of magnitude than in typical 3d metals and a FM net moment of about 0.1 mB/Ir, is reported. This emphasizes how efficiently the nontrivial topological band properties of SIO can be manipulated by structural modifications and the exchange interaction with 3d TMOs.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Optical read-out of the Néel vector in metallic antiferromagnet Mn$_{2}$Au

Metallic antiferromagnets with broken inversion symmetry on the two sublattices, strong spin-orbit coupling and high Néel temperatures offer new opportunities for applications in spintronics. Especially Mn$_{2}$Au, with high Néel temperature and conductivity, is particularly interesting for real-world applications. Here, manipulation of the orientation of the staggered magnetization,\textit{\ i.e.} the Néel vector, by current pulses has been recently demonstrated, with the read-out limited to studies of anisotropic magnetoresistance or X-ray magnetic linear dichroism. Here, we report on the in-plane reflectivity anisotropy of Mn$_{2}$Au (001) films, which were Néel vector aligned in pulsed magnetic fields. In the near-infrared, the anisotropy is $\approx$ 0.6\%, with higher reflectivity for the light polarized along the Néel vector. The observed magnetic linear dichroism is about four times larger than the anisotropic magnetoresistance. This suggests the dichroism in Mn$_{2}$Au is a result of the strong spin-orbit interactions giving rise to anisotropy of interband optical transitions, in-line with recent studies of electronic band-structure. The considerable magnetic linear dichroism in the near-infrared could be used for ultrafast optical read-out of the Néel vector in Mn$_{2}$Au.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Influence of the vicinal substrate miscut on the anisotropic two-dimensional electronic transport in Al2O3-SrTiO3 heterostructures

The electrical resistance of the two-dimensional electron system (2DES) which forms at the interface of SrTiO3 (STO)-based heterostructures displays anisotropic transport with respect to the direction of current flow at low temperature. We have investigated the influence of terraces at the surface of STO substrates from which the 2DES are prepared. Such terraces are always present in commercially available STO substrates due to the tolerance of surface preparation which result in small miscut angles of the order of gamma ~ 0.1° with respect to the surface normal. By a controlled increase of the substrate miscut we could systematically reduce the width of the terraces and thereby increase the density of substrate surface steps. The in-plane anisotropy of the electrical resistance was studied as a function of the miscut angle gamma and found to be mainly related to interfacial scattering arising from the substrate surface steps. However, the influence of gamma was notably reduced by the occurrence of step-bunching and lattice-dislocations in the STO substrate material. Magnetoresistance (MR) depends on the current orientation as well, reflecting the anisotropy of carrier mobility. For gamma >= 2°, MR is substantially enhanced and shows the trend towards a linear field dependence which is typical for inhomogeneous conductors. From weak-antilocalization observed at small magnetic field we deduce information on inelastic scattering and spin-orbit coupling. While the field scale associated with a Rashba-type spin-orbit coupling in 2D weak-localization does not show a pronounced correlation with gamma, distinct changes of the scale are associated with inelastic scattering.

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preprint2020arXiv

Strange semimetal dynamics in SrIrO$_3$

The interplay of electronic correlations, multi-orbital excitations, and strong spin-orbit coupling is a fertile ground for new states of matter in quantum materials. Here, we report on a confocal Raman scattering study of momentum-resolved charge dynamics from a thin film of semimetallic perovskite $\mathbf{SrIrO_3}$. We demonstrate that the charge dynamics, characterized by a broad continuum, is well described in terms of the marginal Fermi liquid phenomenology. In addition, over a wide temperature regime, the inverse scattering time is for all momenta close to the Planckian limit $\mathbf{τ^{-1}_{\hbar}=k_{\rm B} T/\hbar}$. Thus, $\mathbf{SrIrO_3}$ is a semimetallic multi-band system that is as correlated as, for example, the cuprate superconductors. The usual challenge to resolve the charge dynamics in multi-band systems with very different mobilities is circumvented by taking advantage of the momentum space selectivity of polarized electronic Raman scattering. The Raman responses of both hole- and electron-pockets display an electronic continuum extending far beyond 1000\icm ($\sim$125 meV), much larger than allowed by the phase space for creating particle-hole pairs in a regular Fermi liquid. Analyzing this response in the framework of a memory function formalism, we are able to extract the frequency dependent scattering rate and mass enhancement factor of both types of charge carriers, which in turn allows us to determine the carrier-dependent mobilities and electrical resistivities. The results are well consistent with transport measurement and demonstrate the potential of this approach to investigate the charge dynamics in multi-band systems.

0 citations0 reviewsNo code linkedOpen access