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Researcher profile

Rudolf Schneider

Rudolf Schneider contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.str-elcond-mat.mtrl-sci

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Published work

2 published item(s)

preprint2022arXiv

Direct observation of strong anomalous Hall effect and proximity-induced ferromagnetic state in SrIrO3

The 5d iridium-based transition metal oxides have gained broad interest because of their strong spin-orbit coupling which favors new or exotic quantum electronic states. On the other hand, they rarely exhibit more mainstream orders like ferromagnetism due to generally weak electron-electron correlation strength. Here, we show a proximity-induced ferromagnetic (FM) state with TC = 100 K and strong magnetocrystalline anisotropy in a SrIrO3 (SIO) heterostructure via interfacial charge transfer by using a ferromagnetic insulator in contact with SIO. Electrical transport allows to selectively probe the FM state of the SIO layer and the direct observation of a strong, intrinsic and positive anomalous Hall effect (AHE). For T < 20 K, the AHE displays unusually large coercive and saturation field, a fingerprint of a strong pseudospin-lattice coupling. A Hall angle, sxyAHE/sxx, larger by an order of magnitude than in typical 3d metals and a FM net moment of about 0.1 mB/Ir, is reported. This emphasizes how efficiently the nontrivial topological band properties of SIO can be manipulated by structural modifications and the exchange interaction with 3d TMOs.

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preprint2020arXiv

Influence of the vicinal substrate miscut on the anisotropic two-dimensional electronic transport in Al2O3-SrTiO3 heterostructures

The electrical resistance of the two-dimensional electron system (2DES) which forms at the interface of SrTiO3 (STO)-based heterostructures displays anisotropic transport with respect to the direction of current flow at low temperature. We have investigated the influence of terraces at the surface of STO substrates from which the 2DES are prepared. Such terraces are always present in commercially available STO substrates due to the tolerance of surface preparation which result in small miscut angles of the order of gamma ~ 0.1° with respect to the surface normal. By a controlled increase of the substrate miscut we could systematically reduce the width of the terraces and thereby increase the density of substrate surface steps. The in-plane anisotropy of the electrical resistance was studied as a function of the miscut angle gamma and found to be mainly related to interfacial scattering arising from the substrate surface steps. However, the influence of gamma was notably reduced by the occurrence of step-bunching and lattice-dislocations in the STO substrate material. Magnetoresistance (MR) depends on the current orientation as well, reflecting the anisotropy of carrier mobility. For gamma >= 2°, MR is substantially enhanced and shows the trend towards a linear field dependence which is typical for inhomogeneous conductors. From weak-antilocalization observed at small magnetic field we deduce information on inelastic scattering and spin-orbit coupling. While the field scale associated with a Rashba-type spin-orbit coupling in 2D weak-localization does not show a pronounced correlation with gamma, distinct changes of the scale are associated with inelastic scattering.

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