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Researcher profile

Ding Xu

Ding Xu contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mtrl-scicond-mat.mes-hallphysics.optics

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Published work

2 published item(s)

preprint2026arXiv

Effects of thermal annealing and film thickness on the structural and optical properties of indium-tin-oxide thin films

Indium-tin oxide (ITO) is a crucial functional layer for the optoelectronic applications, such as non-volatile color display thin films based on the ITO/phase-change material (PCM)/ITO/reflective metal multilayer structures on a silicon substrate. In addition to non-volatile color tuning by PCMs, thermally induced crystallization may alter the optical properties of ITO layers as well. But the potential change in color of the ITO layers is not considered so far. In this work, we investigate the structural and optical properties of ITO thin films via X-ray diffraction, spectroscopic ellipsometry and ultraviolet-visible spectrophotometry measurements. After thermal annealing at 250 °C, the ITO thin films of 15-100 nm get crystallized with strong changes in refractive index n and extinction coefficient k in the visible light range. However, for the 5-nm ITO thin film, crystallization is only observed after thermal annealing at 350 °C and the change in color is limited upon phase transition. We provide a colormap of the ITO/platinum/silicon structure in terms of the annealing temperature (150-350 °C) and ITO film thickness (5-100 nm). Our work suggests that the intrinsic change in colors of ITO layers should also be considered for the PCM-based reconfigurable display application.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Dark-exciton driven energy funneling into dielectric inhomogeneities in two-dimensional semiconductors

The optoelectronic and transport properties of two-dimensional transition metal dichalcogenide semiconductors (2D TMDs) are highly susceptible to external perturbation, enabling precise tailoring of material function through post-synthetic modifications. Here we show that nanoscale inhomogeneities known as nanobubbles can be used for both strain and, less invasively, dielectric tuning of exciton transport in bilayer tungsten disulfide (WSe2). We use ultrasensitive spatiotemporally resolved optical scattering microscopy to directly image exciton transport, revealing that dielectric nanobubbles are surprisingly efficient at funneling and trapping excitons at room temperature, even though the energies of the bright excitons are negligibly affected. Our observations suggest that exciton funneling in dielectric inhomogeneities is driven by momentum-indirect (dark) excitons whose energies are more sensitive to dielectric perturbations than bright excitons. These results reveal a new pathway to control exciton transport in 2D semiconductors with exceptional spatial and energetic precision using dielectric engineering of dark state energetic landscapes.

0 citations0 reviewsNo code linkedOpen access