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Baichang Li

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cond-mat.mtrl-sci physics.optics cond-mat.mes-hall physics.app-ph

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preprint2022arXiv

Dark-exciton driven energy funneling into dielectric inhomogeneities in two-dimensional semiconductors

The optoelectronic and transport properties of two-dimensional transition metal dichalcogenide semiconductors (2D TMDs) are highly susceptible to external perturbation, enabling precise tailoring of material function through post-synthetic modifications. Here we show that nanoscale inhomogeneities known as nanobubbles can be used for both strain and, less invasively, dielectric tuning of exciton transport in bilayer tungsten disulfide (WSe2). We use ultrasensitive spatiotemporally resolved optical scattering microscopy to directly image exciton transport, revealing that dielectric nanobubbles are surprisingly efficient at funneling and trapping excitons at room temperature, even though the energies of the bright excitons are negligibly affected. Our observations suggest that exciton funneling in dielectric inhomogeneities is driven by momentum-indirect (dark) excitons whose energies are more sensitive to dielectric perturbations than bright excitons. These results reveal a new pathway to control exciton transport in 2D semiconductors with exceptional spatial and energetic precision using dielectric engineering of dark state energetic landscapes.

preprint2022arXiv

Unzipping hBN with ultrashort mid-infrared pulses

Manipulating the nanostructure of materials is critical for numerous applications in electronics, magnetics, and photonics. However, conventional methods such as lithography and laser-writing require cleanroom facilities or leave residue. Here, we describe a new approach to create atomically sharp line defects in hexagonal boron nitride (hBN) at room temperature by direct optical phonon excitation in the mid-infrared (mid-IR). We term this phenomenon "unzipping" to describe the rapid formation and growth of a <30-nm-wide crack from a point within the laser-driven region. The formation of these features is attributed to large atomic displacements and high local bond strain from driving the crystal at a natural resonance. This process is distinguished by (i) occurring only under resonant phonon excitation, (ii) producing highly sub-wavelength features, and (iii) sensitivity to crystal orientation and pump laser polarization. Its cleanliness, directionality, and sharpness enable applications in in-situ flake cleaving and phonon-wave-coupling via free space optical excitation.

preprint2019arXiv

Low-loss composite photonic platform based on 2D semiconductor monolayers

Two dimensional materials such as graphene and transition metal dichalcogenides (TMDs) are promising for optical modulation, detection, and light emission since their material properties can be tuned on-demand via electrostatic doping. The optical properties of TMDs have been shown to change drastically with doping in the wavelength range near the excitonic resonances. However, little is known about the effect of doping on the optical properties of TMDs away from these resonances, where the material is transparent and therefore could be leveraged in photonic circuits. Here, we probe the electro-optic response of monolayer TMDs at near infrared (NIR) wavelengths (i.e. deep in the transparency regime), by integrating them on silicon nitride (SiN) photonic structures to induce strong light $-$ matter interaction with the monolayer. We dope the monolayer to carrier densities of ( $7.2 \pm 0.8$ ) $\times$ $10^{13} \textrm{cm}^{-2}$ , by electrically gating the TMD using an ionic liquid. We show strong electro-refractive response in monolayer tungsten disulphide (WS $_2$ ) at NIR wavelengths by measuring a large change in the real part of refractive index $Δ$ n = $0.53$ , with only a minimal change in the imaginary part $Δ$ k = $0.004$ . The doping induced phase change ( $Δ$ n), compared to the induced absorption ( $Δ$ k) measured for WS $_2$ ( $Δ$ n/ $Δ$ k $\sim 125$ ), a key metric for photonics, is an order of magnitude higher than the $Δ$ n/ $Δ$ k for bulk materials like silicon ( $Δ$ n/ $Δ$ k $\sim 10$ ), making it ideal for various photonic applications. We further utilize this strong tunable effect to demonstrate an electrostatically gated SiN-WS $_2$ phase modulator using a WS $_2$ -HfO $_2$ (Hafnia)-ITO (Indium Tin Oxide) capacitive configuration, that achieves a phase modulation efficiency (V $_π$ L) of 0.8 V $\cdot$ cm with a RC limited bandwidth of 0.3 GHz.

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