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Researcher profile

Difeng Yin

Difeng Yin contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
physics.app-phphysics.optics

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Published work

3 published item(s)

preprint2022arXiv

High-production-rate fabrication of low-loss lithium niobate electro-optic modulators using photolithography assisted chemo-mechanical etching (PLACE)

Integrated thin-film lithium niobate (LN) electro-optic (EO) modulators of broad bandwidth, low insertion loss, low cost and high production rate are essential elements in contemporary inter-connection industries and disruptive applications. Here, we demonstrated the design and fabri-cation of a high performance thin-film LN EO modulator using photolithography assisted chemo-mechanical etching (PLACE) technology. Our device shows a 3-dB bandwidth over 50 GHz, along with a comparable low half wave voltage-length product of 2.16 Vcm. We obtain a fiber-to-fiber insertion loss of 2.6 dB.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Monolithically integrated waveguide-coupled single-frequency microlaser on erbium-doped thin film lithium niobate

We overcome the difficulty in realizing a monolithic waveguide-coupled microring laser integrated on erbium-doped thin film lithium niobate (Er: TFLN) using photolithography assisted chemo-mechanical etching (PLACE) technique. We demonstrate an integrated single-frequency microring laser operating around 1531 nm wavelength. The PLACE technique, enabling integrated Er: TFLN photonics with low propagation loss, can thus be used to realize low cost mass production of monolithic on-chip microlasers with applications ranging from optical communication and photonic integrated circuit (PIC) to precision metrology and large-scale sensing.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

On-chip integrated waveguide amplifiers on Erbium-doped thin film lithium niobate on insulator

We demonstrate on-chip light amplification with integrated optical waveguide fabricated on erbium-doped thin film lithium niobate on insulator (TFLNOI) using the photolithography assisted chemo-mechanical etching (PLACE) technique. A maximum internal net gain of 18 dB in the small-signal-gain regime is measured at the peak emission wavelength of 1530 nm for a waveguide length of 3.6 cm, indicating a differential gain per unit length of 5 dB/cm. This work paves the way to the monolithic integration of diverse active and passive photonic components on the TFLNOI platform.

0 citations0 reviewsNo code linkedOpen access