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Researcher profile

Dieter Weiss

Dieter Weiss contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mes-hallcond-mat.mtrl-sci

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Published work

9 published item(s)

preprint2022arXiv

Circular polarization immunity of the cyclotron resonance photoconductivity in two-dimensional electron systems

Studying the cyclotron resonance (CR)-induced photoconductivity in GaAs and HgTe two-dimensional electron structures, we observed an anomalous photoresponse for the CR-inactive geometry being of almost the same magnitude as the CR-active one. This observation conflicts with simultaneous transmission measurements and contradicts the conventional theory of CR which predicts no resonant response for the CR-inactive geometry. We provide a possible route to explain this fundamental failure of the conventional description of light-matter interaction and discuss a modified electron dynamics near strong impurities that may provide a local near-field coupling of the two helicity modes of the terahertz field at low temperatures. This should result in a CR-enhanced local absorption and, thus, CR photoconductivity for both magnetic field polarities.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Counterintuitive gate dependence of weak antilocalization in bilayer graphene/WSe$_2$ heterostructures

Strong gate control of proximity-induced spin-orbit coupling was recently predicted in bilayer graphene/transition metal dichalcogenides (BLG/TMDC) heterostructures, as charge carriers can easily be shifted between the two graphene layers, and only one of them is in close contact to the TMDC. The presence of spin-orbit coupling can be probed by weak antilocalization (WAL) in low field magnetotransport measurements. When the spin-orbit splitting in such a heterostructure increases with the out of plane electric displacement field $\bar D$, one intuitively expects a concomitant increase of WAL visibility. Our experiments show that this is not the case. Instead, we observe a maximum of WAL visibility around $\bar D=0$. This counterintuitive behaviour originates in the intricate dependence of WAL in graphene on symmetric and antisymmetric spin lifetimes, caused by the valley-Zeeman and Rashba terms, respectively. Our observations are confirmed by calculating spin precession and spin lifetimes from an $8\times 8$ model Hamiltonian of BLG/TMDC.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Ratchet effect in spatially modulated bilayer graphene: Signature of hydrodynamic transport

We report on the observation of the ratchet effect -- generation of direct electric current in response to external terahertz (THz) radiation -- in bilayer graphene, where inversion symmetry is broken by an asymmetric dual-grating gate potential. As a central result, we demonstrate that at high temperature, $T = 150~\textrm{K}$, the ratchet current decreases at high frequencies as $ \propto 1/ω^2$, while at low temperature, $T = 4.2~\textrm{K}$, the frequency dependence becomes much stronger $\propto 1/ω^6$. The developed theory shows that the frequency dependence of the ratchet current is very sensitive to the ratio of the electron-impurity and electron-electron scattering rates. The theory predicts that the dependence $1/ω^6$ is realized in the hydrodynamic regime, when electron-electron scattering dominates, while $1/ω^2$ is specific for the drift-diffusion approximation. Therefore, our experimental observation of a very strong frequency dependence reveals the emergence of the hydrodynamic regime.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Quantum Hall effect and Landau levels in the 3D topological insulator HgTe

We review low and high field magnetotransport in 80 nm-thick strained HgTe, a material that belongs to the class of strong three-dimensional topological insulators. Utilizing a top gate, the Fermi level can be tuned from the valence band via the Dirac surface states into the conduction band and allows studying Landau quantization in situations where different species of charge carriers contribute to magnetotransport. Landau fan charts, mapping the conductivity $ σ_{xx}(V_g, B) $ in the whole magnetic field - gate voltage range, can be divided into six areas, depending on the state of the participating carrier species. Key findings are: (i) the interplay of bulk holes (spin-degenerate) and Dirac surface electrons (non-degenerate), coexisting for $ E_F $ in the valence band, leads to a periodic switching between odd and even filling factors and thus odd and even quantized Hall voltage values. (ii) A similar though less pronounced behavior we found for coexisting Dirac surface and conduction band electrons. (iii) In the bulk gap, quantized Dirac electrons on the top-surface coexist at lower B with non-quantized ones on the bottom side, giving rise to quantum Hall plateau values depending - for a given filling factor - on the magnetic field strength. In stronger $ B $ fields, Landau level separation increases, charge transfer between different carrier species becomes energetically favorable and leads to the formation of a global (i.e. involving top and bottom surface) quantum Hall state. Simulations using the simplest possible theoretical approach are in line with the basic experimental findings, describing correctly the central features of the transitions from classical to quantum transport in the respective areas of our multicomponent charge carrier system.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Annealing-induced magnetic moments detected by spin precession measurements in epitaxial graphene on SiC

We present results of non-local and three terminal (3T) spin precession measurements on spin injection devices fabricated on epitaxial graphene on SiC. The measurements were performed before and after an annealing step at 150 degrees Celsius for 15 minutes in vacuum. The values of spin relaxation length L_s and spin relaxation time tau_s obtained after annealing are reduced by a factor 2 and 4, respectively, compared to those before annealing. An apparent discrepancy between spin diffusion constant D_s and charge diffusion constant D_c can be resolved by investigating the temperature dependence of the g-factor, which is consistent with a model for paramagnetic magnetic moments.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Hysteretic magnetoresistance and thermal bistability in a magnetic two-dimensional hole system

Colossal negative magnetoresistance and the associated field-induced insulator-to-metal transition, the most characteristic features of magnetic semiconductors, are observed in n-type rare earth oxides and chalcogenides, p-type manganites, n-type and p-type diluted magnetic semiconductors (DMS) as well as in quantum wells of n-type DMS. Here, we report on magnetostransport studies of Mn modulation-doped InAs quantum wells, which reveal a magnetic field driven and bias voltage dependent insulator-to-metal transition with abrupt and hysteretic changes of resistance over several orders of magnitude. These phenomena coexist with the quantised Hall effect in high magnetic fields. We show that the exchange coupling between a hole and the parent Mn acceptor produces a magnetic anisotropy barrier that shifts the spin relaxation time of the bound hole to a 100 s range in compressively strained quantum wells. This bistability of the individual Mn acceptors explains the hysteretic behaviour while opening prospects for information storing and processing. At high bias voltage another bistability, caused by the overheating of electrons10, gives rise to abrupt resistance jumps.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Magnetoresistance of individual ferromagnetic GaAs/(Ga,Mn)As core-shell nanowires

We investigate, angle dependent, the magnetoresistance (MR) of individual self-assembled ferromagnetic GaAs/(Ga,Mn)As core-shell nanowires at cryogenic temperatures. The shape of the MR traces and the observed strong anisotropies in transport can be ascribed to the interplay of the negative magnetoresistance effect and a strong uniaxial anisotropy with the magnetic easy direction pointing along the wire axis. The magnetoresistance can be well described by a quantitative analysis based on the concept of the effective magnetic field, usually used to describe ferromagnetic resonance phenomena. The nanowires we investigate exhibit a uniaxial anisotropy which is approximately 5 times larger than the strain induced anisotropy observed in lithographically prepared (Ga,Mn)As stripes.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Local spin valve effect in lateral (Ga,Mn)As/GaAs spin Esaki diode devices

We report on a local spin valve effect observed unambiguously in lateral all-semiconductor all-electrical spin injection devices, employing p+-(Ga,Mn)As/n+-GaAs Esaki diode structures as spin aligning contacts. We discuss the observed local spin-valve signal as a result of interplay between spin-transport-related contribution and tunneling anisotropic magnetoresistance of magnetic contacts. The magnitude of the spin-related magnetoresistance change is equal to 30 Ohm which is twice the magnitude of the measured non-local signal.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Magnetic anisotropy of epitaxial (Ga,Mn)As on (113)A GaAs

The temperature dependence of magnetic anisotropy in (113)A (Ga,Mn)As layers grown by molecular beam epitaxy is studied by means of superconducting quantum interference device (SQUID) magnetometry as well as by ferromagnetic resonance (FMR) and magnetooptical effects. Experimental results are described considering cubic and two kinds of uniaxial magnetic anisotropy. The magnitude of cubic and uniaxial anisotropy constants is found to be proportional to the fourth and second power of saturation magnetization, respectively. Similarly to the case of (001) samples, the spin reorientation transition from uniaxial anisotropy with the easy along the [-1, 1, 0] direction at high temperatures to the biaxial <100> anisotropy at low temperatures is observed around 25 K. The determined values of the anisotropy constants have been confirmed by FMR studies. As evidenced by investigations of the polar magnetooptical Kerr effect, the particular combination of magnetic anisotropies allows the out-of-plane component of magnetization to be reversed by an in-plane magnetic field. Theoretical calculations within the p-d Zener model explain the magnitude of the out-of-plane uniaxial anisotropy constant caused by epitaxial strain, but do not explain satisfactorily the cubic anisotropy constant. At the same time the findings point to the presence of an additional uniaxial anisotropy of unknown origin. Similarly to the case of (001) films, this additional anisotropy can be explained by assuming the existence of a shear strain. However, in contrast to the (001) samples, this additional strain has an out-of-the-(001)-plane character.

0 citations0 reviewsNo code linkedOpen access