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Dieter Weber

Dieter Weber appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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3 published item(s)

preprint2020arXiv

Next-Generation Information Technology Systems for Fast Detectors in Electron Microscop

The Gatan K2 IS direct electron detector (Gatan Inc., 2018), which was introduced in 2014, marked a watershed moment in the development of cameras for transmission electron microscopy (TEM) (Pan & Czarnik, 2016). Its pixel frequency, i.e. the number of data points (pixels) recorded per second, was two orders of magnitude higher than the fastest cameras available only five years before. Starting from 2009, the data rate of TEM cameras has outpaced the development of network, mass storage and memory bandwidth by almost two orders of magnitude. Consequently, solutions based on personal computers (PCs) that were adequate until then are no longer able to handle the resulting data rates. Instead, tailored high-performance setups are necessary. Similar developments have occurred for advanced X-ray sources such as the European XFEL, requiring special information technology (IT) systems for data handling (Sauter, Hattne, Grosse-Kunstleve, & Echols, 2013) (Fangohr, et al., 2018). Information and detector technology are currently under rapid development and involve disruptive technological innovations. This chapter briefly reviews the technological developments of the past 20 years, presents a snapshot of the current situation at the beginning of 2019 with many practical considerations, and looks forward to future developments.

preprint2013arXiv

Variable resistor made by repeated steps of epitaxial deposition and lithographic structuring of oxide layers by using wet chemical etchants

Variable resistors were constructed from epitaxial SrRuO3 (SRO), La0.67Sr0.33MnO3 (LSMO) and SrTiO3 layers with perovskite crystal structure. Each layer was patterned separately by lithographic methods. Optimized wet chemical etchants and several polishing steps in organic solvents allowed good epitaxy of subsequent layers, comparable to epitaxy on pristine substrates. Periodate as the oxidizing agent for SRO and iodide with ascorbic acid as the reducing agents for LSMO were used to attack these chemically resistant oxides. The final devices changed their conductance in a similar manner to previously described variable resistors that were defined with shadow masks.

preprint2012arXiv

Non-volatile gated variable resistor based on doped La_{2}CuO_{4} and SrTiO_{3} heterostructures

Gated variable resistors were manufactured by depositing epitaxial heterostructures of doped La_{2}CuO_{4} and SrTiO_{3} layers. Their conductance change as function of write current I and write time t followed a simple empirical law of the form ΔG/G = CI^A t^B. This behavior is in agreement with ionic transport that accelerates exponentially with electrical field strength.