Abstract
Gated variable resistors were manufactured by depositing epitaxial heterostructures of doped La_{2}CuO_{4} and SrTiO_{3} layers. Their conductance change as function of write current I and write time t followed a simple empirical law of the form ΔG/G = CI^A t^B. This behavior is in agreement with ionic transport that accelerates exponentially with electrical field strength.
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