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Dawei Shen

Dawei Shen contributes to research discovery and scholarly infrastructure.

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Published work

8 published item(s)

preprint2026arXiv

Cauchy Data for Formation of Multiple Black Holes with Prescribed ADM Parameters

We give a simple construction of smooth, asymptotically flat vacuum initial data modeling a relativistic collapsing $N$--body system, with independently prescribed ADM energy, linear momentum, and angular momentum for each component, subject to the timelike condition $\E>|¶|$. The initial data contain no trapped surfaces, and the future development contains multiple causally independent trapped regions that dynamically form from localized subsets of the initial slice. In particular, the maximal development of data with well-separated collapsing components and relative motion is expected to yield spacetimes containing multiple black holes.

preprint2022arXiv

Dirac nodal lines in the quasi-one-dimensional ternary telluride TaPtTe$_5$

A Dirac nodal-line phase, as a quantum state of topological materials, usually occur in three-dimensional or at least two-dimensional materials with sufficient symmetry operations that could protect the Dirac band crossings. Here, we report a combined theoretical and experimental study on the electronic structure of the quasi-one-dimensional ternary telluride TaPtTe$_5$, which is corroborated as being in a robust nodal-line phase with fourfold degeneracy. Our angle-resolved photoemission spectroscopy measurements show that two pairs of linearly dispersive Dirac-like bands exist in a very large energy window, which extend from a binding energy of $\sim$ 0.75 eV to across the Fermi level. The crossing points are at the boundary of Brillouin zone and form Dirac-like nodal lines. Using first-principles calculations, we demonstrate the existing of nodal surfaces on the $k_y = \pm π$ plane in the absence of spin-orbit coupling (SOC), which are protected by nonsymmorphic symmetry in TaPtTe$_5$. When SOC is included, the nodal surfaces are broken into several nodal lines. By theoretical analysis, we conclude that the nodal lines along $Y$-$T$ and the ones connecting the $R$ points are non-trivial and protected by nonsymmorphic symmetry against SOC.

preprint2022arXiv

Multiple topological nodal structure in LaSb2 with large linear magnetoresistance

Unconventional fermions in the immensely studied topological semimetals are the source for rich exotic topological properties. Here, using symmetry analysis and first-principles calculations, we propose the coexistence of multiple topological nodal structure in LaSb2, including topological nodal surfaces, nodal lines and in particular eightfold degenerate nodal points, which have been scarcely observed in a single material. Further, utilizing high resolution angle-resolved photoemission spectroscopy in combination with Shubnikov-de Haas quantum oscillations measurements, we confirm the existence of nodal surfaces and eightfold degenerate nodal points in LaSb2, and extract the π Berry phase proving the non-trivial electronic band structure topology therein. The intriguing multiple topological nodal structure might play a crucial role in giving rise to the large linear magnetoresistance. Our work renews the insights into the exotic topological phenomena in LaSb2 and its analogous.

preprint2022arXiv

The Prime Graphs of Some Classes of Finite Groups

In this paper we study prime graphs of finite groups. The prime graph of a finite group $G$, also known as the Gruenberg-Kegel graph, is the graph with vertex set {primes dividing $|G|$} and an edge $p$-$q$ if and only if there exists an element of order $pq$ in $G$. In finite group theory, studying the prime graph of a group has been an important topic for the past almost half century. Only recently prime graphs of solvable groups have been characterized in graph theoretical terms only. In this paper, we continue this line of research and give complete characterizations of several classes of groups, including groups of square-free order, metanilpotent groups, groups of cube-free order, and, for any $n\in \mathbb{N}$, solvable groups of $n^\text{th}$-power-free order. We also explore the prime graphs of groups whose composition factors are cyclic or $A_5$ and draw connections to a conjecture of Maslova. We then propose an algorithm that recovers the prime graph from a dual prime graph.

preprint2021arXiv

Dirac Nodal Lines and Nodal Loops in a Topological Kagome Superconductor CsV$_3$Sb$_5$

The intertwining of charge order, superconductivity and band topology has promoted the AV$_3$Sb$_5$ (A=K, Rb, Cs) family of materials to the center of attention in condensed matter physics. Underlying those mysterious macroscopic properties such as giant anomalous Hall conductivity (AHC) and chiral charge density wave is their nontrivial band topology. While there have been numerous experimental and theoretical works investigating the nontrivial band structure and especially the van Hove singularities, the exact topological phase of this family remains to be clarified. In this work, we identify CsV$_3$Sb$_5$ as a Dirac nodal line semimetal based on the observation of multiple Dirac nodal lines and loops close to the Fermi level. Combining photoemission spectroscopy and density functional theory, we identify two groups of Dirac nodal lines along $k_z$ direction and one group of Dirac nodal loops in the A-H-L plane. These nodal loops are located at the Fermi level within the instrumental resolution limit. Importantly, our first-principle analyses indicate that these nodal loops may be a crucial source of the mysterious giant AHC observed. Our results not only provide a clear picture to categorize the band structure topology of this family of materials, but also suggest the dominant role of topological nodal loops in shaping their transport behavior.

preprint2020arXiv

Orbital-selective Dirac fermions and extremely flat bands in frustrated kagome-lattice metal CoSn

Layered kagome-lattice 3d transition metals are emerging as an exciting platform to explore the frustrated lattice geometry and quantum topology. However, the typical kagome electronic bands, characterized by sets of the Dirac-like band capped by a phase-destructive flat band, have not been clearly observed, and their orbital physics are even less well investigated. Here, we present close-to-textbook kagome bands with orbital differentiation physics in CoSn, which can be well described by a minimal tight-binding model with single-orbital hopping in Co kagome lattice. The capping flat bands with bandwidth less than 0.2 eV run through the whole Brillouin zone, especially the bandwidth of the flat band of out-of-plane orbitals is less than 0.02 eV along G-M. The energy gap induced by spin-orbit interaction at the Dirac cone of out-of-plane orbitals is much smaller than that of in-plane orbitals, suggesting orbital-selective character of the Dirac fermions.

preprint2019arXiv

Epitaxial growth and characterization of high quality Bi2O2Se thin films on SrTiO3 substrates by pulsed laser deposition

Recently, Bi2O2Se is discovered as a promising two-dimensional (2D) semiconductor for next generation electronics, due to its moderate bandgap size, high electron mobility and pronounced ambient stability. Meanwhile, it has been predicted that high quality Bi2O2Se-related heterostructures may possess exotic physical phenomena, such as piezoelectricity and topological superconductivity. Herein, we report the first successful heteroepitaxial growth of Bi2O2Se films on SrTiO3 substrates via pulsed laser deposition (PLD) method. Films obtained under optimal conditions show an epitaxial growth with the c axis perpendicular to the film surface and the a and b axes parallel to the substrate. The growth mode transition to three dimensional (3D) island from quasi-2D layer of the heteroepitaxial Bi2O2Se films on SrTiO3 (001) substrates is observed as prolonging deposition time of films. The maximum value of electron mobility reaches 160 cm2/V-1s-1 at room temperature in a 70nm-thick film. The thickness dependent mobility provides evidence that interface-scattering is likely to be the limiting factor for the relatively low electron mobility at low temperature, implying that the interface engineering as an effective method to tune the low temperature electron mobility. Our work suggests the epitaxial Bi2O2Se films grown by PLD are promising for both fundamental study and practical applications.