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David J. Singh

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Published work

53 published item(s)

preprint2022arXiv

Complex structure due to As bonding and interplay with electronic structure in superconducting BaNi2As2

BaNi2As2 is a superconductor chemically related to the Fe-based superconductors, with a complex and poorly understood structural phase transition. We show based on first principles calculations that in fact there are two distinct competing structures. These structures are very different from electronic, transport and bonding points of view but are close in energy. These arise due to complex As bonding patterns and drive distortions of the Ni layers. This is supported by photoemission experiments. This leads to an interplay of electronic and structural behavior including induced anisotropic of the electronic transport. The competition between these distortions is associated with the complex behavior observed in BaNi2As2 samples.

preprint2022arXiv

Violation of the Rule of Parsimony: Mixed Local Moment and Itinerant Fe Magnetism in Fe$_{3}$GeN

Ternary iron nitrides are of considerable interest due to their diverse magnetic properties. We find, based on first principles calculations, that the relatively minor structural distortion from the cubic antiperovskite structure in Fe$_3$GeN leads to unusual magnetic behavior. In particular, there is a separation into Fe sites with very different magnetic behaviors, specifically a site with Fe atoms having a stable local moment and a site where the Fe shows characteristics of much more itinerant behavior. This shows a remarkable flexibility of the Fe magnetic behavior in these nitrides and points towards the possibility of systems where minor structural and chemical changes can lead to dramatic changes in magnetic properties. The results suggest that, analogously to oxide perovskite materials, modulation of magnetic properties via chemical or strain control of octahedral rotation may be feasible. This may then lead to approaches for tuning magnetism to realize properties of interest, for example tuning magnetic transitions to quantum critical regimes or to proximity to metamagnetic transitions of interest for devices.

preprint2020arXiv

Characterization of rattling in relation to thermal conductivity: ordered half-Heusler semiconductors

The factors that affect the thermal conductivity of semiconductors is a topic of great scientific interest, especially in relation to thermoelectrics. Key developments have been the concept of the phonon-glass-electron-crystal (PGEC) and the related idea of rattling to achieve this. We use first principles phonon and thermal conductivity calculations in order to explore the concept of rattling for stoichiometric ordered half-Heusler compounds. These compounds can be regarded as filled zinc blende materials, and the filling atom could be viewed as a rattler if it is weakly bound. We use two simple metrics, one related to the frequency and the other to bond frustration and anharmonicity. We find that both measures correlate with thermal conductivity. This suggests that both may be useful in screening materials for low thermal conductivity.

preprint2020arXiv

Establishing the carrier scattering phase diagram for ZrNiSn-based half-Heusler thermoelectric materials

Chemical doping is one of the most important strategies for tuning electrical properties of semiconductors, particularly thermoelectric materials. Generally, the main role of chemical doping lies in optimizing the carrier concentration, but there can potentially be other important effects. Here, we show that chemical doping plays multiple roles for both electron and phonon transport properties in half-Heusler thermoelectric materials. With ZrNiSn-based half-Heusler materials as an example, we use high-quality single and polycrystalline crystals, various probes, including electrical transport measurements, inelastic neutron scattering measurement, and first-principles calculations, to investigate the underlying electron-phonon interaction. We find that chemical doping brings strong screening effects to ionized impurities, grain boundary, and polar optical phonon scattering, but has negligible influence on lattice thermal conductivity. Furthermore, it is possible to establish a carrier scattering phase diagram, which can be used to select reasonable strategies for optimization of the thermoelectric performance.

preprint2020arXiv

Shortcomings of meta-GGA functionals when describing magnetism

Several recent studies have shown that SCAN, a functional belonging to the meta-generalized gradient approximation (MGGA) family, leads to significantly overestimated magnetic moments in itinerant ferromagnetic metals. However, this behavior is not inherent to the MGGA level of approximation since TPSS, for instance, does not lead to such severe overestimations. In order to provide a broader view of the accuracy of MGGA functionals for magnetism, we extend the assessment to more functionals, but also to antiferromagnetic solids. The results show that to describe magnetism there is overall no real advantage in using a MGGA functional compared to GGAs. For both types of approximation, an improvement in ferromagnetic metals is necessarily accompanied by a deterioration (underestimation) in antiferromagnetic insulators, and vice-versa. We also provide some analysis in order to understand in more detail the relation between the mathematical form of the functionals and the results.

preprint2020arXiv

Understanding the lattice thermal conductivity of SrTiO3 from an ab initio perspective

We present a detailed analysis of the structure dependence of the lattice thermal conductivity of SrTiO3. We have used both ab initio Molecular Dynamic simulations and Density Functional Theory calculations to decouple the effect of different structural distortions on the thermal conductivity. We have identified two main mechanisms for tuning the thermal conductivity when a distortion is applied. First, the modification of the acoustic-modes energy dispersion when a change in the lattice parameters is imposed and second, the low energy polar modes. In particular and counterintuitively, we have found that an increase in the angle of the oxygen octahedral rotations increases the thermal conductivity due to its coupling to these polar modes.

preprint2019arXiv

Electronic and magnetic properties of perovskite selenite and tellurite compounds: CoSeO$_3$, NiSeO$_3$, CoTeO$_3$ and NiTeO$_3$

Selenium and tellurium are among the few elements that form $AB$O$_3$ perovskite structures with a four valent ion in the $A$ site. This leads to highly distorted structures and unusual magnetic behavior. Here we investigate the Co and Ni selenite and tellurite compounds, CoSeO$_3$, CoTeO$_3$, NiSeO$_3$ and NiTeO$_3$ using first principles calculations. We find an interplay of crystal field and Jahn-Teller distortions that underpin the electronic and magnetic properties. While all compounds are predicted to show an insulating G-type antiferromagnetic ground state, there is a considerable difference in the anisotropy of the exchange interactions between the Ni and Co compounds. This is related to the Jahn-Teller distortion. Finally, we observe that these four compounds show characteristics generally associated with Mott insulators, even when described at the level of standard density functional theory. These are then dense bulk band or Slater, Mott-type insulators.

preprint2016arXiv

Competing covalent and ionic bonding in Ge-Sb-Te phase change materials

Ge2Sb2Te5 and related phase change materials are highly unusual in that they can be readily transformed between amorphous and crystalline states using very fast melt, quench, anneal cycles, although the resulting states are extremely long lived at ambient temperature. These states have remarkably different physical properties including very different optical constants in the visible in strong contrast to common glass formers such as silicates or phosphates. This behavior has been described in terms of resonant bonding, but puzzles remain, particularly regarding different physical properties of crystalline and amorphous phases. Here we show that there is a strong competition between ionic and covalent bonding in cubic phase providing a link between the chemical basis of phase change memory property and origins of giant responses of piezoelectric materials (PbTiO3, BiFeO3). This has important consequences for dynamical behavior in particular leading to a simultaneous hardening of acoustic modes and softening of high frequency optic modes in crystalline phase relative to amorphous. This different bonding in amorphous and crystalline phases provides a direct explanation for different physical properties and understanding of the combination of long time stability and rapid switching and may be useful in finding new phase change compositions with superior properties.

preprint2016arXiv

Design of ternary alkaline-earth metal Sn(II) oxides with potential good p-type conductivity

Oxides with good p-type conductivity have been long sought after to achieve high performance all-oxide optoelectronic devices. Divalent Sn(II) based oxides are promising candidates because of their rather dispersive upper valence bands caused by the Sn-5s/O-2p anti-bonding hybridization. There are so far few known Sn(II) oxides being p-type conductive suitable for device applications. Here, we present via first-principles global optimization structure searches a material design study for a hitherto unexplored Sn(II)-based system, ternary alkaline-earth metal Sn(II) oxides in the stoichiometry of MSn2O3 (M = Mg, Ca, Sr, Ba). We identify two stable compounds of SrSn2O3 and BaSn2O3, which can be stabilized by Sn-rich conditions in phase stability diagrams. Their structures follow the Zintl behaviour and consist of basic structural motifs of SnO3 tetrahedra. Unexpectedly they show distinct electronic properties with band gaps ranging from 1.90 (BaSn2O3) to 3.15 (SrSn2O3) eV, and hole effective masses ranging from 0.87 (BaSn2O3) to above 6.0 (SrSn2O3) m0. Further exploration of metastable phases indicates a wide tunability of electronic properties controlled by the details of the bonding between the basic structural motifs. This suggests further exploration of alkaline-earth metal Sn(II) oxides for potential applications requiring good p-type conductivity such as transparent conductors and photovoltaic absorbers.

preprint2016arXiv

High-pressure Phase Stability and Superconductivity of Pnictogen Hydrides and Chemical Trends for Compressed Hydrides

Binary hydrides formed by the pnictogens of phosphorus, arsenic and antimony are studied at high pressures using first principles methods. Stable structures are predicted and their electronic, vibrational and superconducting properties are investigated. We predict that SbH$_{4}$ and AsH$_{8}$ will be high-temperature superconductors at megabar pressures, with critical temperatures in excess of 100 K. The highly symmetric hexagonal SbH$_{4}$ phase is predicted to be stabilized above about 150 GPa, which is readily achievable in diamond anvil cell experiments. We find that all phosphorus hydrides are metastable with respect to decomposition into the elements within the pressure range studied. Trends based on our results and literature data reveal a connection between the high-pressure behaviors and ambient-pressure chemical quantities which provides insight into understanding which elements may form hydrogen-rich high-temperature superconducting phases at high pressures.

preprint2016arXiv

Interference Evidence for Rashba-Type Spin-Split on Semimetallic WTe2 Surface

Semimetallic tungsten ditelluride (WTe2) displays an extremely large non-saturating magnetoresistance (XMR), which is the subject of intense interest. This phenomenon is thought to arise from the combination of perfect n-p charge compensation with low carrier densities in WTe2 and presumably details of its band structure. Recently, "spin texture" induced by strong spin-orbital coupling (SOC) has been observed in WTe2 by angle-resolved photoemission spectroscopy (ARPES). This provides a mechanism for protecting backscattering for the states involved and thus was proposed to play an important role in the XMR of WTe2. Here, based on our density functional calculations for bulk WTe2, we found a strong Rashba spin-orbit effect in the calculated band structure due to its non-centrosymmetric structure. This splits bands and two-fold spin degeneracy of bands is lifted. A prominent Umklapp interference pattern (a spectroscopic feature with involving reciprocal lattice vectors) can be observed by scanning tunneling microscopic (STM) measurements on WTe2 surface at 4.2 K. This differs distinctly from the surface atomic structure demonstrated at 77 K. The energy dependence of Umklapp interference shows a strong correspondence with densities of states integrated from ARPES measurement, manifesting a fact that the bands are spin-split on the opposites side of Gamma point. Spectroscopic survey reveals the ratio of electron/hole asymmetry changes alternately with lateral locations along b axis, providing a microscopic picture for double-carrier transport of semimetallic WTe2. The calculated band structure and Fermi surface is further supported by our ARPES results and Shubnikov-de Haas (SdH) oscillations measurements.

preprint2016arXiv

Intrinsic ultralow lattice thermal conductivity of the unfilled skutterudite FeSb$_3$

It has been generally accepted that unfilled skutterudites process high lattice thermal conductivity ($κ_{l}$) that can be efficiently reduced upon filling. Here by using first principles Boltzmann-Peierls transport calculations, we find pure skutterudite of FeSb$_3$ with no filler in fact has an intrinsic ultralow $κ_{l}$ smaller than that of CoSb$_3$ by one order of magnitude. The value is even smaller than those of most of the fully filled skutterudites. This finding means that with FeSb$_3$ as a reference, filling does not necessarily lower $κ_{l}$. The ultralow $κ_{l}$ of FeSb$_3$ is a consequence of much softened optical phonon branches associated with the weakly bonded Sb$_4$ rings. They overlap more with heat-carrying acoustic phonons and significantly increase the phase space for three-phonon anharmonic scattering processes. This provides an alternative non-filling related mechanism for lowering the $κ_{l}$ of skutterudites.

preprint2016arXiv

Metallic Nickel Silicides: Experiments and Theory for NiSi and First Principles Calculations for Other Phases

We report detailed experimental investigation of the transport and magnetic properties of orthorhombic NiSi along with first principles studies of this phase and related nickel silicides. Neutron scattering shows no evidence for magnetism, in agreement with first principles calculations. Comparison of first principles results and experimental results from our measurements and literature show a weak electron phonon coupling. We discuss transport and other properties of NiSi and find behavior characteristic of a weak correlated metal far from magnetism. Trends among the nickel silicides as a function of nickel content are discussed.

preprint2016arXiv

N-Type Oxide Thermoelectrics Via Visual Search Strategies

We discuss and present search strategies for finding new thermoelectric compositions based on first principles electronic structure and transport calculations. We illustrate them by application to a search for potential n-type oxide thermoelectric materials. This includes a screen based on visualization of electronic energy isosurfaces. We report compounds that show potential as thermoelectric materials along with detailed properties, including SrTiO3, which is a known thermoelectric, and appropriately doped KNbO3 and rutile TiO2.

preprint2016arXiv

Sn(II)-containing phosphates as optoelectronic materials

We theoretically investigate Sn(II) phosphates as optoelectronic materials using first principles calculations. We focus on known prototype materials Sn$_n$P$_2$O$_{5+n}$ (n=2, 3, 4, 5) and a previously unreported compound, SnP$_2$O$_6$ (n=1), which we find using global optimization structure prediction. The electronic structure calculations indicate that these compounds all have large band gaps above 3.2 eV, meaning their transparency to visible light. Several of these compounds show relatively low hole effective masses ($\sim$2-3 m$_0$), comparable the electron masses. This suggests potential bipolar conductivity depending on doping. The dispersive valence band-edges underlying the low hole masses, originate from the anti-bonding hybridization between the Sn 5s orbitals and the phosphate groups. Analysis of structure-property relationships for the metastable structures generated during structure search shows considerable variation in combinations of band gap and carrier effective masses, implying chemical tunability of these properties. The unusual combinations of relatively high band gap, low carrier masses and high chemical stability suggests possible optoelectronic applications of these Sn(II) phosphates, including p-type transparent conductors. Related to this, calculations for doped material indicate low visible light absorption, combined with high plasma frequencies.

preprint2016arXiv

Thermoelectric properties of $n$-type SrTiO3

We present an investigation of the thermoelectric properties of cubic perovskite SrTiO3. The results are derived from a combination of calculated transport functions obtained from Boltzmann transport theory in the constant scattering time approximation based on the electronic structure and existing experimental data for La-doped SrTiO3. The figure of merit ZT is modeled with respect to carrier concentration and temperature. The model predicts a relatively high $ZT$ at optimized doping, and suggests that the $ZT$ value can reach 0.7 at T = 1400 K. Thus $ZT$ can be improved from the current experimental values by carrier concentration optimization.

preprint2015arXiv

Ba_{2}TeO as an optoelectronic material: First-principles study

The band structure, optical and defects properties of Ba_{2}TeO are systematically investigated using density functional theory with a view to understanding its potential as an optoelectronic or trans- parent conducting material. Ba_{2}TeO crystallizes with tetragonal structure (space group P4/nmm) and with a 2.93 eV optical band gap 1 . We find relatively modest band masses for both electrons and holes suggesting applications. Optical properties show a infrared-red absorption when doped. This could potentially be useful for combining wavelength filtering and transparent conducting functions. Furthermore, our defect calculations show that Ba_{2}TeO is intrinsically p-type conducting under Ba-poor condition. However, the spontaneous formation of the donor defects may constrain the p-type transport properties and would need to be addressed to enable applications.

preprint2015arXiv

Benefits of Carrier Pocket Anisotropy to Thermoelectric Performance: The case of $p$-type AgBiSe$_2$

We study theoretically the effects of anisotropy on the thermoelectric performance of $p$-type AgBiSe$_2$. We present an apparent realization of the thermoelectric benefits of one-dimensional "plate-like" carrier pocket anisotropy in the valence band of this material. Based on first principles calculations we find a substantial anisotropy in the electronic structure, likely favorable for thermoelectric performance, in the valence bands of the hexagonal phase of the silver chalcogenide thermoelectric AgBiSe$_2$, while the conduction bands are more isotropic, and in our experiments do not attain high performance. AgBiSe$_2$ has already exhibited a $ZT$ value of 1.5 in a high-temperature disordered fcc phase, but room-temperature performance has not been demonstrated. We develop a theory for the ability of anisotropy to decouple the density-of-states and conductivity effective masses, pointing out the influence of this effect in the high performance thermoelectrics Bi$_2$Te$_3$ and PbTe. From our first principles and Boltzmann transport calculations we estimate the performance of $p$-type AgBiSe$_{2}$.

preprint2015arXiv

Electronic structure and the origin of the high ordering temperature in SrRu2O6

SrRu2O6 is a layered honeycomb lattice material with an extraordinarily high magnetic ordering temperature. We investigated this material using density functional calculations. We find that the energy scales for moment formation and ordering are similar and high. Additionally, we find that the magnetic anisotropy is high and favors moments oriented along the $c$-axis. This provides an explanation for the exceptionally high ordering temperature. Finally, the compound is found to be semiconducting at the bare density functional level, even without magnetic order. Experimental consequences of this scenario for the high ordering temperature are discussed.

preprint2015arXiv

Electronic Structure, Transport and Phonons of SrAg$Ch$F ($Ch$=S, Se, Te): Bulk Superlattice Thermoelectrics

We report calculations of the electronic structure, vibrational properties and transport for the p-type semiconductors, SrAg$Ch$F ($Ch$=S, Se and Te). We find soft phonons with low frequency optical branches intersecting the acoustic modes below 50 $cm^{-1}$, indicative of a material with low thermal conductivity. The bands at and near the valence band maxima are highly two dimensional, which leads to high thermopowers even at high carrier concentrations, which is a combination that suggests good thermoelectric performance. These materials may be regarded as bulk realizations of superlattice thermoelectrics.

preprint2015arXiv

Magnetism in Na-filled Fe-based skutterudites

The interplay of superconductivity and magnetism is a subject of ongoing interest, stimulated most recently by the discovery of Fe-based superconductivity and the recognition that spin-fluctuations near a magnetic quantum critical point may provide an explanation for the superconductivity and the order parameter. Here we investigate magnetism in the Na filled Fe-based skutterudites using first principles calculations. NaFe4Sb12 is a known ferromagnet near a quantum critical point. We find a ferromagnetic metallic state for this compound driven by a Stoner type instability, consistent with prior work. In accord with prior work, the magnetization is overestimated, as expected for a material near an itinerant ferromagnetic quantum critical point. NaFe4P12 also shows a ferromagnetic instability at the density functional level, but this instability is much weaker than that of NaFe4Sb12, possibly placing it on the paramagnetic side of the quantum critical point. NaFe4As12 shows intermediate behavior. We also present results for skutterudite FeSb3, which is a metastable phase that has been reported in thin film form.

preprint2015arXiv

Multiband Semimetallic Electronic Structure of Superconducting Ta2PdSe5

We report the electronic structure and related properties of the superconductor Ta2PdSe5 as determined from density functional calculations. The Fermi surface has two disconnected sheets, both derived from bands of primarily chalcogenide p states. These are a corrugated hole cylinder and and a heavier complex shaped electron sheet. The sheets contain 0.048 holes and a compensating number of electrons per formula unit, making the material a semimetallic superconductor. The results support the presence of two band superconductivity, although a discrepancy in the specific heat is noted. This discrepancy is discussed as a possible consequence of Pd deficiency in samples.

preprint2015arXiv

Nature of Valance Band Splitting on Multilayer MoS2

Understanding the origin of splitting of valance band is important since it governs the unique spin and valley physics in few-layer MoS2. With first principle methods, we explore the effects of spin-orbit coupling and layer's coupling on few-layer MoS2. It is found that intra-layer spin-orbit coupling has a major contribution to the splitting of valance band at K. In double-layer MoS2, the layer's coupling results in the widening of energy gap of splitted states induced by intra-layer spin-orbit coupling. The valance band splitting of bulk MoS_2 in K can follow this model. We also find the effect of inter-layer spin-orbit coupling in triple-layer MoS2. In addition, the inter-layer spin-orbit coupling is found to become to be stronger under the pressure and results in the decrease of main energy gap in the splitting valance bands at K.

preprint2015arXiv

Transport Properties of Cubic Crystalline Ge$_{2}$Sb$_{2}$Te$_{5}$: A Potential Low-temperature Thermoelectric Material

Ge$_{2}$Sb$_{2}$Te$_{5}$ (GST) has been widely used as a popular phase change material. In this study, we show that it exhibits high Seebeck coefficients 200 - 300 $μ$V/K in its cubic crystalline phase ($\it{c}$-GST) at remarkably high $\it{p}$-type doping levels of $\sim$ 1$\times$10$^{19}$ - 6$\times$10$^{19}$ cm$^{-3}$ at room temperature. More importantly, at low temperature (T = 200 K), the Seebeck coefficient was found to exceed 200 $μ$V/K for a doping range 1$\times$10$^{19}$ - 3.5$\times$10$^{19}$ cm$^{-3}$. Given that the lattice thermal conductivity in this phase has already been measured to be extremely low ($\sim$ 0.7 W/m-K at 300 K),\citep{r51} our results suggest the possibility of using $\it{c}$-GST as a low-temperature thermoelectric material.

preprint2015arXiv

Tuning Optical Properties of Transparent Conducting Barium Stannate by Dimensional Reduction

We report calculations of the electronic structure and optical properties of doped $n$-type perovskite BaSnO3 and layered perovskites. While doped BaSnO$_3$ retains its transparency for energies below the valence to conduction band onset, the doped layered compounds exhibit below band edge optical conductivity due to transitions from the lowest conduction band. This gives absorption in the visible for Ba2SnO4. Thus it is important to minimize this phase in transparent conducting oxide (TCO) films. Ba3Sn2O7 and Ba4Sn3O10 have strong transitions only in the red and infrared, respectively. Thus there may be opportunities for using these as wavelength filtering TCO.

preprint2014arXiv

Connecting thermoelectric performance and topological-insulator behavior: Bi$_2$Te$_3$ and Bi$_{2}$Te$_{2}$Se from first principles

Thermoelectric performance is of interest for numerous applications such as waste heat recovery and solid state energy conversion, and will be seen to be closely connected to topological insulator behavior. In this context we here report first principles transport and defect calculations for Bi$_{2}$Te$_{2}$Se in relation to Bi$_{2}$Te$_{3}$. The two compounds are found to contain remarkably different electronic structures in spite of being isostructural and isoelectronic. We discuss these results in terms of the topological insulator characteristics of these compounds.

preprint2014arXiv

Itinerant magnetism in metallic CuFe2Ge2

Theoretical calculations are performed to understand the electronic structure and magnetic properties of CuFe$_2$Ge$_2$. The band structure reveal large electron density $N(E_F)$ at the Fermi level suggesting strong itinerant character of magnetism. The Fermi surface is dominated by two dimensional sheet like structures, with potentially strong nesting between them. The magnetic ground state appears to be ferromagnetic along $a$ and antiferromagnetic in other directions. The results show that CuFe$_2$Ge$_2$ is an antiferromagnetic metal, with similarities to the Fe-based superconductors; such as magnetism with substantial itinerant character and coupling between magnetic order and electrons at the Fermi energy.

preprint2014arXiv

Light scattering and surface plasmons on small spherical particles

Light scattering by small particles has a long and interesting history in physics. Nonetheless, it continues to surprise with new insights and applications. This includes new discoveries, such as novel plasmonic effects, as well as exciting theoretical and experimental developments such as optical trapping, anomalous light scattering, optical tweezers, nano-spasers, and novel aspects and realizations of Fano resonances. These have led to important new applications, including several ones in the biomedical area and in sensing techniques at the single-molecule level. There are additionally many potential future applications in optical devices and solar energy technologies. Here we review the fundamental aspects of light scattering by small spherical particles, emphasizing the phenomenological treatments and new developments in this field.

preprint2013arXiv

Crystal, magnetic, and electronic structures, and properties of new BaMnPnF (Pn = As, Sb, Bi)

New fluoropnictides BaMnPnF with Pn = As, Sb, Bi, are synthesized by stoichiometric reaction of elements with BaF\_2. The compounds crystallize in the tetragonal P4/nmm (No. 129, Z = 2) space group, with the ZrCuSiAs-type structure, as indicated by single crystal and powder X-ray diffraction results. Electrical resistivity results indicate that Pn = As, Sb, and Bi are semiconductors with band gaps of E\_g = 0.73 eV, E\_g = 0.48 eV and E\_g = 0.003 eV, respectively. Powder neutron diffraction reveals a G-type antiferromagnetic order below T\_N = 338(1) K for Pn = As, and below T\_N = 272(1) K for Pn = Sb. Magnetic susceptibility increases with temperature above 100 K for all the materials. Density functional calculations also find semiconducting antiferromagnetic compounds with strong in-plane and weaker out-of-plane exchange coupling that may result in non-Curie Weiss behavior above T\_N. There is strong covalency between Mn and pnictogen elements. The ordered magnetic moments are 3.65(5) μB/Mn for Pn = As, and 3.66(3) μB/Mn for Pn = Sb at 4 K, as refined from neutron diffraction experiments.

preprint2013arXiv

Electronic Structure and Upper Critical Field of Superconducting Ta$_2$PdS$_5$

We report electronic structure calculations for Ta$_2$PdS$_5$, which is a layered superconductor containing heavy elements and displaying an upper critical field, $H_{c2}(0)$, $\sim$3 times higher than the estimated Pauli limit. We show that this is a multiband superconductor that is most likely in the strong coupling regime. This provides an alternative explanation to strong spin orbit scattering for the high upper critical field.

preprint2013arXiv

Importance of non-parabolic band effects in the thermoelectric properties of semiconductors

We present an analysis of the thermoelectric properties of of $n$-type GeTe and SnTe in relation to the lead chalcogenides PbTe and PbSe. We find that the singly degenerate conduction bands of semiconducting GeTe and SnTe are highly non-ellipsoidal, even very close to the band edges. This leads to isoenergy surfaces with a strongly corrugated shape that is clearly evident at carrier concentrations well below 0.005 $e$ per formula unit (7 - 9 $\times$ 10$^{19}$cm$^{-3}$ depending on material) Analysis within Boltzmann theory suggests that this corrugation may be favorable for the thermoelectric transport. Our calculations also indicate that values of the power factor for these two materials may well exceed those of PbTe and PbSe. As a result these materials may exhibit $n$-type performance exceeding that of the lead chalcogenides.

preprint2013arXiv

Itinerant magnetism in doped semiconducting beta-FeSi2 and CrSi2

Novel or unusual magnetism is a subject of considerable interest, particularly in metals and degenerate semiconductors. In such materials the interplay of magnetism, transport and other Fermi liquid properties can lead to fascinating physical behavior. One example is in magnetic semiconductors, where spin polarized currents may be controlled and used. We report density functional calculations predicting magnetism in doped semiconducting beta-FeSi2 and CrSi2 at relatively low doping levels particularly for n-type. In this case, there is a rapid cross-over to a half-metallic state as a function of doping level. The results are discussed in relation to the electronic structure and other properties of these compounds.

preprint2013arXiv

Magnetism and electronic structure of La2ZnIrO6 and La2MgIrO6: candidate Jeff =1/2 Mott insulators

We study experimentally and theoretically the electronic and magnetic properties of two insulating double perovskites that show similar atomic and electronic structure, but different magnetic properties. In magnetization measurements, La2ZnIrO6 displays weak ferromagnetic behavior below 7.5 K whereas La2MgIrO6 shows antiferromagnetic behavior (AFM) below TN = 12 K. Electronic structure calculations find that the weak ferromagnetic behavior observed in La2ZnIrO6 is in fact due to canted antiferromagnetism. The calculations also predict canted antiferromagnetic behavior in La2MgIrO6, but intriguingly this was not observed. Neutron diffraction measurements confirm the essentially antiferromagnetic behavior of both systems, but lack the sensitivity to resolve the small (0.22 μB/Ir) ferromagnetic component in La2ZnIrO6. Overall, the results presented here indicate the crucial role of spin-orbit coupling (SOC) and the on-site Coulomb repulsion on the magnetic, transport, and thermodynamic properties of both compounds. The electronic structure calculations show that both compounds, like Sr2IrO4, are Jeff = 1/2 Mott insulators. Our present findings suggest that La2ZnIrO6 and La2MgIrO6 provide a new playground to study the interplay between SOC and on-site Coulomb repulsion in a 5d transition metal oxide.

preprint2013arXiv

Optical properties of cubic and rhombohedral GeTe

Calculations of the optical properties of GeTe in the cubic NaCl and rhombohedral ferroelectric structures are reported. The rhombohedral ferroelectric distortion increases the band gap from 0.11 eV to 0.38 eV. Remarkably, substantial changes in optical properties are found even at high energies up to 5 eV. The results are discussed in relation to the bonding of GeTe and to phase change materials based on it.

preprint2013arXiv

Origin of the phase transition in IrTe2: structural modulation and local bonding instability

We used X-ray/neutron diffraction to determine the low temperature (LT) structure of IrTe2. A structural modulation was observed with a wavevector of k =(1/5, 0, 1/5) below Ts?285 K, accompanied by a structural transition from a trigonal to a triclinic lattice. We also performed the first principles calculations for high temperature (HT) and LT structures, which elucidate the nature of the phase transition and the LT structure. A local bonding instability associated with the Te 5p states is likely the origin of the structural phase transition in IrTe2.

preprint2013arXiv

Potential thermoelectric performance of hole-doped Cu2O

High thermoelectric performance in oxides requires stable conductive materials that have suitable band structures. Here we show based on an analysis of the thermopower and related properties using first-principles calculations and Boltzmann transport theory that hole doped Cu2O may be such a material. We find that hole-doped Cu2O has a high thermopower of above 200 microV/K even with doping levels as high as 5.5x10 20 cm-3 at 500 K, mainly attributed to the heavy valence bands of Cu2O. This is reminiscent of the cobaltate family of high performance oxide thermoelectrics and implies that hole-doped Cu2O could be an excellent thermoelectric material if suitably doped.

preprint2013arXiv

Superconductivity and Magnetism in YFe$_2$Ge$_2$

We report calculations of the electronic structure and magnetic properties of YFe$_2$Ge$_2$ and discuss the results in terms of the observed superconductivity near magnetism. We find that YFe$_2$Ge$_2$ is a material near a magnetic quantum critical point based on comparison of standard density functional results that predict magnetism with experiment. The band structure and Fermi surfaces are very three dimensional and higher conductivity is predicted in the $c$-axis direction. The magnetism is of Stoner type and is predominately from an in-plane ferromagnetic tendency. The inter-layer coupling is weak giving a perhaps 2D character to the magnetism, which is in contrast to the conductivity and may be important for suppressing the ordering tendency. This is compatible with a triplet superconducting state mediated by spin fluctuations.

preprint2013arXiv

Thermoelectric properties of $β$-FeSi$_{\text2}$

We investigate the thermoelectric properties of $β$-FeSi$_{\text2}$ using first principles electronic structure and Boltzmann transport calculations. We report a high thermopower for both \textit{p}- and \textit{n}-type $β$-FeSi$_{\text2}$ over a wide range of carrier concentration and in addition find the performance for \textit{n}-type to be higher than for the \textit{p}-type. Our results indicate that, depending upon temperature, a doping level of 3$\times10{^{20}}$ - 2$\times10{^{21}}$ cm${^{-3}}$ may optimize the thermoelectric performance.

preprint2013arXiv

Transport, Thermal, and Magnetic Properties of the Narrow-Gap Semiconductor CrSb2

Resistivity, Hall effect, Seebeck coefficient, thermal conductivity, heat capacity, and magnetic susceptibility data are reported for CrSb2 single crystals. In spite of some unusual features in electrical transport and Hall measurements below 100 K, only one phase transition is found in the temperature range from 2 to 750 K corresponding to long-range antiferromagnetic order below T_N ~ 273 K. Many of the low temperature properties can be explained by the thermal depopulation of carriers from the conduction band into a low mobility band located approximately 16 meV below the conduction band edge, as deduced from the Hall effect data. In analogy with what occurs in Ge, the low mobility band is likely an impurity band. The Seebeck coefficient, S, is large and negative for temperatures from 2 to 300 K ranging from ~ -70\muV/K at 300 K to -4500\muV/K at 18 K. A large maximum in |S| at 18 K is likely due to phonon drag with the abrupt drop in |S| below 18 K due to the thermal depopulation of the high mobility conduction band. The large thermal conductivity between 10 and 20 K (~350 W/m/K) is consistent with this interpretation, as are detailed calculations of the Seebeck coefficient made using the complete calculated electronic structure. These data are compared to data reported for FeSb2, which crystallizes in the same marcasite structure, and FeSi, another unusual narrow-gap semiconductor.

preprint2012arXiv

Acoustic impedance and interface phonon scattering in Bi$_2$Te$_3$ and other semiconducting materials

We present first principles calculations of the phonon dispersions of Bi2Te3 and discuss these in relation to the acoustic phonon interface scattering in ceramics. The phonon dispersions show agreement with what is known from neutron scattering for the optic modes. We find a difference between the generalized gradient approximation and local density results for the acoustic branches. This is a consequence of an artificial compression of the van der Waals bonded gaps in the Bi2Te3 structure when using the generalized gradient approximation. As a result local density approximation calculations provide a better description of the phonon dispersions in Bi$_{2}$Te$_{3}$. A key characteristic of the acoustic dispersions is the existence of a strong anisotropy in the velocities. We develop a model for interface scattering in ceramics with acoustic wave anisotropy and apply this to Bi2Te3 and compare with PbTe and diamond.

preprint2012arXiv

Electronic Structure and Fermiology of Superconducting LaNiGa$_2$

We report electronic structure calculations for the layered centrosymmetric superconductor LaNiGa$_2$, which has been identified as having a possible triplet state based on evidence for time reversal symmetry breaking. The Fermi surface has several large sheets and is only moderately anisotropic, so that the material is best described as a three dimensional metal. These include sections that are open in the in-plane direction as well as a section that approaches the zone center. The density of states is high and primarily derived from Ga $p$ states, which hybridize with Ni $d$ states. Comparing with experimental specific heat data, we infer a superconducting $λ\le$ 0.55, which implies that this is a weak to intermediate coupling material. However, the Ni occurs in a nominal $d^{10}$ configuration in this material, which places the compound far from magnetism. Implications of these results for superconductivity are discussed.

preprint2012arXiv

High three dimensional thermoelectric performance from low dimensional bands

Reduced dimensionality has long been regarded as an important strategy for increasing thermoelectric performance, for example in superlattices and other engineered structures. Here we point out and illustrate by examples that three dimensional bulk materials can be made to behave as if they were two dimensional from the point of view of thermoelectric performance. Implications for the discovery of new practical thermoelectrics are discussed.

preprint2012arXiv

Quantum Oscillations in the High Pressure Metallic State of Ca$_2$RuO$_4$

We present evidence for quantum oscillations in the pressure-induced metallic state of the 4$d$ layered perovskite Ca$_2$RuO$_4$. A complicated oscillation spectrum is observed, which is both temperature and field dependent, with unusually light cyclotron masses in the range of $m^*/m_e$ $\sim$ 0.6 -- 3, suggesting that the pressure-induced metallic state is a weakly correlated Fermi liquid. We compare our observations to band structure calculations within the local spin density approximation, and conclude that some features of the spectrum are a result of non-linear spin splitting effects.

preprint2012arXiv

Thermoelectric properties of AgGaTe$_2$ and related chalcopyrite structure materials

We present an analysis of the potential thermoelectric performance of p-type AgGaTe$_{2}$, which has already shown a $ZT$ of 0.8 with partial optimization, and observe that the same band structure features, such as a mixture of light and heavy bands and isotropic transport, that lead to this good performance are present in certain other ternary chalcopyrite structure semiconductors. We find that optimal performance of AgGaTe$_2$ will be found for hole concentrations between 4 $\times 10^{19}$ and 2 $\times 10^{20}$cm$^{-3}$ at 900 K, and 2 $\times 10^{19}$ and 10$^{20}$ cm$^{-3}$ at 700 K, and that certain other chalcopyrite semiconductors might show good thermoelectric performance at similar doping ranges and temperatures if not for higher lattice thermal conductivity.

preprint2012arXiv

Wide band gap tunability in complex transition metal oxides by site-specific substitution

Fabricating complex transition metal oxides with a tuneable band gap without compromising their intriguing physical properties is a longstanding challenge. Here we examine the layered ferroelectric bismuth titanate and demonstrate that, by site-specific substitution with the Mott insulator lanthanum cobaltite, its band gap can be narrowed as much as one electron volt, while remaining strongly ferroelectric. We find that when a specific site in the host material is preferentially substituted, a split-off state responsible for the band gap reduction is created just below the conduction band of bismuth titanate. This provides a route for controlling the band gap in complex oxides for use in emerging oxide opto-electronic and energy applications.

preprint2011arXiv

Design of a low band gap oxide ferroelectric: Bi$_6$Ti$_4$O$_{17}$

A strategy for obtaining low band gap oxide ferroelectrics based on charge imbalance is described and illustrated by first principles studies of the hypothetical compound Bi$_6$Ti$_4$O$_{17}$, which is an alternate stacking of the ferroelectric Bi$_4$Ti$_3$O$_{12}$. We find that this compound is ferroelectric, similar to Bi$_4$Ti$_3$O$_{12}$ although with a reduced polarization. Importantly, calculations of the electronic structure with the recently developed functional of Tran and Blaha yield a much reduced band gap of 1.83 eV for this material compared to Bi$_4$Ti$_3$O$_{12}$. Therefore, Bi$_6$Ti$_4$O$_{17}$ is predicted to be a low band gap ferroelectric material.

preprint2011arXiv

Spin Glass and Semiconducting Behavior in 1D BaFe2-δSe3 Crystals

We investigate the physical properties and electronic structure of BaFe2-δSe3 crystals, which were grown out of tellurium flux. The crystal structure of the compound, an iron-deficient derivative of the ThCr2Si2-type, is built upon edge-shared FeSe4 tetrahedra fused into double chains. The semiconducting BaFe2-δSe3 with δ \approx 0.2 (ρ295K = 0.18 Ω\cdotcm and Eg = 0.30 eV) does not order magnetically, however there is evidence for short-range magnetic correlations of spin glass type (Tf \approx 50 K) in magnetization, heat capacity and neutron diffraction results. A one-third substitution of selenium with sulfur leads to a slightly higher electrical conductivity (ρ295K = 0.11 Ω\cdotcm and Eg = 0.22 eV) and a lower spin glass freezing temperature (Tf \approx 15 K), corroborating with higher electrical conductivity reported for BaFe2S3. According to the electronic structure calculations, BaFe2Se3 can be considered as a one-dimensional ladder structure with a weak interchain coupling.

preprint2010arXiv

Control of Correlations in Sr4V2O6Fe2As2 by Chemical Stoichiometry

We show using a combination of powder X-ray and neutron diffraction, first principles calculations, temperature- and field-dependent magnetization, heat capacity and resistivity data that the superconducting behavior of `Sr$_4$V$_2$O$_6$Fe$_2$As$_2$' is dependent on synthesis conditions, particularly, heating profiles result in unintentional chemical doping. This compound can be tuned from a state in which the vanadium electrons are itinerant with a high electronic density of states, to a state where the vanadium-oxide layers are insulating and presumably antiferromagnetic.

preprint2010arXiv

Electronic Structure Calculations with the Tran-Blaha Modified Becke-Johnson Density Functional

We report a series of calculations testing the predictions of the Tran-Blaha functional for the electronic structure and magnetic properties of condensed systems. We find a general improvement in the properties of semiconducting and insulating systems, relative to calculations with standard generalized gradient approximations, although this is not always by the same mechanism as other approaches such as the quasiparticle GW method. In ZnO the valence bands are narrowed and the band gap is increased to a value in much better agreement with experiment. The Zn $d$ states do not move to higher binding energy as they do in LDA+U calculations. The functional is effective for systems with hydride anions, where correcting self-interaction errors in the 1$s$ state is important. Similarly, it correctly opens semiconducting gaps in the alkaline earth hexaborides.It correctly stabilizes an antiferromagnetic insulating ground state for the undoped cuprate parent CaCuO$_2$, but seriously degrades the agreement with experiment for ferromagnetic Gd relative to the standard local spin density approximation and generalized gradient approximations. This is due to positioning of the minority spin $4f$ states at too low an energy. Conversly, the position of the La $4f$ conduction bands of La$_2$O$_3$ is in reasonable accord with experiment as it is with standard functionals. The functional narrows the Fe $d$ bands of the parent compound LaFeAsO of the iron high temperature superconductors, while maintaining the high Fe spectral weight near the Fermi energy.

preprint2010arXiv

Structure and optical properties of high light output halide scintillators

Structural and optical properties of several high light output halide scintillators and closely related materials are presented based on first principles calculations. The optical properties are based on the Engel-Vosko generalized gradient approximation and the recently developed density functional of Tran and Blaha. The materials investigated are BaBr$_2$, BaIBr, BaCl$_2$, BaF$_2$, BaI$_2$, BiI$_3$, CaI$_2$, Cs$_2LiYCl$_6$, CsBa$_2$Br$_5$, CsBa$_2$I$_5$, K$_2$LaBr$_5$, K$_2$LaCl$_5$,K$_2$LaI$_5$, LaBr$_3$, LaCl$_3$, SrBr$_2$, and YI$_3$. For comparison results are presented for the oxide CdWO$_4$. We find that the Tran Blaha functional gives greatly improved band gaps and optical properties in this class of materials. Furthermore, we find that unlike CdWO$_4$, most of these halides are highly isotropic from an optical point of view even though in many cases the crystal structures and other properties are not. This general result is rationalized in terms of halide chemistry. Implications for the development of ceramic halide scintillators are discussed.

preprint2009arXiv

BaT2As2 Single Crystals (T = Fe, Co, Ni) and Superconductivity upon Co-doping

The crystal structure and physical properties of BaFe2As2, BaCo2As2, and BaNi2As2 single crystals are surveyed. BaFe2As2 gives a magnetic and structural transition at TN = 132(1) K, BaCo2As2 is a paramagnetic metal, while BaNi2As2 has a structural phase transition at T0 = 131 K, followed by superconductivity below Tc = 0.69 K. The bulk superconductivity in Co-doped BaFe2As2 below Tc = 22 K is demonstrated by resistivity, magnetic susceptibility, and specific heat data. In contrast to the cuprates, the Fe-based system appears to tolerate considerable disorder in the transition metal layers. First principles calculations for BaFe1.84Co0.16As2 indicate the inter-band scattering due to Co is weak.

preprint2009arXiv

Hole-doped BaFe2-xCrxAs2 Crystals: A Case of Non-superconductivity

We investigate the physical properties and electronic structure upon Cr-doping in the iron arsenide layers of BaFe2As2. This form of hole-doping leads to suppression of the magnetic/structural phase transition in BaFe2-xCrxAs2 for x > 0, but does not lead to superconductivity. For various x values, temperature dependence of the resistivity, specific heat, magnetic susceptibility, Hall coefficient, and single crystal x-ray diffraction data are presented. The materials show signatures of approaching a ferromagnetic state with x, including a metamagnetic transition for x as little as 0.36, an enhanced magnetic susceptibility, and a large Sommerfeld coefficient. Such results reflect renormalization due to spin fluctuations and they are supported by density functional calculations at x = 1. Calculations show a strong interplay between magnetic ordering and chemical ordering of Fe and Cr, with a ferromagnetic ground state. This ferromagnetic ground state is explained in terms of the electronic structure. The resulting phase diagram is suggestive that superconductivity does not derive simply from the suppression of the structural/magnetic transitions.