Abstract
We investigate the thermoelectric properties of -FeSi using first principles electronic structure and Boltzmann transport calculations. We report a high thermopower for both \textit{p}- and \textit{n}-type -FeSi over a wide range of carrier concentration and in addition find the performance for \textit{n}-type to be higher than for the \textit{p}-type. Our results indicate that, depending upon temperature, a doping level of 3 - 2 cm may optimize the thermoelectric performance.
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