Abstract
We demonstrate fully three-dimensional and patterned localization of nitrogen-vacancy (NV) centers in diamond with coherence times in excess of 1 ms. Nitrogen δ-doping during CVD diamond growth vertically confines nitrogen to 4 nm while electron irradiation with a transmission electron microscope (TEM) laterally confines vacancies to less than 1 μm. We characterize the effects of electron energy and dose on NV formation. Importantly, our technique enables the formation of reliably high-quality NV centers inside diamond nanostructures, with applications in quantum information and sensing.
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