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Dan Sievenpiper

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Published work

3 published item(s)

preprint2023arXiv

Valley polarized edge states beyond inversion symmetry breaking

Valley-contrast physics has gained considerable attention, particularly for realizing photonic topological insulators (PTIs) that support reflection-free valley-polarized edge modes (VPEMs) in the absence of inter-valley scattering. It is an open question whether similar robust states can exist in the absence of topological valley phase, i.e., nonvanishing Berry curvature at the valleys. We show that a C6\u{psion}-symmetric triangular photonic crystal (PhC) inherently exhibits uniform distribution of spatially varying phase vortices, which support a local (limited) version of valley Hall effect (LVHE), where the valley polarization is location defined as opposed to being fixed throughout the bulk. We then demonstrate that defect regions with sublattice asymmetry in otherwise a symmetric PhC lead to wave localization and splitting of photons according to their valley index, thus enabling VPEMs along a line defect waveguide. We fabricate our device on a silicon-on-insulator (SOI) slab and characterize it at near-infrared frequencies showing robust transmission through sharp bends comparable to valley PTIs. Our results present a new perspective to creating valley edge states and outline a new waveguiding mechanism applicable to electromagnetics as well as plasmonics, mechanics and acoustics.

preprint2016arXiv

Photoemission-based microelectronic devices

The vast majority of modern microelectronic devices rely on carriers within semiconductors due to their integrability. Therefore, the performance of these devices is limited due to natural semiconductor properties such as band gap and electron velocity. Replacing the semiconductor channel in conventional microelectronic devices with a gas or vacuum channel may scale their speed, wavelength, and power beyond what is available today. However, liberating electrons into gas/vacuum in a practical microelectronic device is quite challenging. It often requires heating, applying high voltages, or using lasers with short wavelengths or high powers. Here, we show that the interaction between an engineered resonant surface (metasurface) and a low-power infrared (IR) laser can cause enough photoemission (via electron tunneling) to implement feasible microelectronic devices such as transistors, switches, and modulators. Photoemission-based devices benefit from the advantages of gas-plasma/vacuum electronic devices while preserving the integrability of semiconductor-based devices.

preprint2014arXiv

On the difference between breakdown and quench voltages of argon plasma and its relation to $4p-4s$ atomic state transitions

Using a relaxation oscillator circuit, breakdown ($V_{\mathrm{BD}}$) and quench ($V_{\mathrm{Q}}$) voltages of a DC discharge microplasma between two needle probes are measured. High resolution modified Paschen curves are obtained for argon microplasmas including a quench voltage curve representing the voltage at which the plasma turns off. It is shown that, for a point to point microgap (e.g. the microgap between two needle probes) which describes many realistic microdevices, neither Paschen's law applies nor field emission is noticeable. Although normally $V_{\mathrm{BD}}>V_{\mathrm{Q}}$, it is observed that depending on environmental parameters of argon, such as pressure and the driving circuitry, plasma can exist in a different state with equal $V_{\mathrm{BD}}$ and $V_{\mathrm{Q}}$. Using emission line spectroscopy, it is shown that $V_{\mathrm{BD}}$ and $V_{\mathrm{Q}}$ are equal if the atomic excitation by the electric field dipole moment dominantly leads to one of the argon's metastable states ($4P_{5}$ in our study).