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Researcher profile

Da-Shuai Ma

Da-Shuai Ma contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mtrl-scicond-mat.mes-hallcond-mat.str-el

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Published work

6 published item(s)

preprint2023arXiv

Hybrid Nodal-chain Semimetal State in MgCaN2

The distinct over-tilting of band crossings in topological semimetal generates the type-I and typeII classification of Dirac/Weyl and nodal-line fermions, accompanied by the exotic electronic and magnetic transport properties. In this work, we propose a concept of hybrid nodal-chain semimetal, which is identified by the linked type-I and type-II nodal rings in the Brillouin zone. Based on first-principles calculations and swarm-intelligence structure search technique, a new ternary nitride MgCaN2 crystal is proposed as the first candidate to realize a novel 3D hybrid nodal-chain state. Remarkably, a flat band is emergent as a characteristic signature of such a hybrid nodal-chain along certain direction in the momentum space, thereby serving a platform to explore the interplay between topological semimetal state and flat band. Moreover, the underlying protection mechanism of the hybrid nodal-chain is revealed by calculating the mirror Z2 invariant and developing a k.p effective Hamiltonian. Additionally, considerable drumhead-like surface states with unique connection patterns are illustrated to identify the non-trivial band topology, which may be measured by future experiments.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Catalogue of Flat-Band Stoichiometric Materials

Topological electronic flatten bands near or at the Fermi level are a promising avenue towards unconventional superconductivity and correlated insulating states. However, the related experiments are mostly limited to the engineered materials, such as moire systems. Here we present a catalogue of all the three-dimensional stoichiometric materials with flat bands around the Fermi level that exist in nature. We consider 55,206 materials from the Inorganic Crystal Structure Database catalogued using the Topological Quantum Chemistry website which provides their structural parameters, space group (SG), band structure, density of states and topological characterization. We combine several direct signatures and properties of band flatness to a high-throughput analysis of all crystal structures. In particular, we identify materials hosting line-graph or bipartite sublattices - either in two or three dimensions - likely leading to flat bands. From this trove of information, we create the Materials Flatband Database website, a powerful search engine for future theoretical and experimental studies. We use it to extract a curated list of 2,379 materials, with among them 345 promising candidates, potentially hosting flat bands whose charge centers are not strongly localized on the atomic sites. We showcase five representative materials: KAg[CN]2 in SG 163 $(P\bar{3}1c)$, Pb2Sb2O7 in SG 227 $(Fd\bar{3}m)$, Rb2CaH4 in SG 139 $(I4/mmm)$, Ca2NCl in SG 166 $(R\bar{3}m)$ and WO3 in SG 221 $(Pm\bar{3}m)$. We provide a theoretical explanation for the origin of their flat bands close to the Fermi energy using the $S$-matrix method introduced in a parallel work [Calugaru et al., Nature Physics 18, 185 (2022)].

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Inventory of high-quality flat-band van der Waals materials

More is left to do in the field of flat bands besides proposing theoretical models. One unexplored area is the flat bands featured in the van der Waals (vdW) materials. Exploring more flat-band material candidates and moving the promising materials toward applications have been well recognized as the cornerstones for the next-generation high-efficiency devices. Here, we utilize a powerful high-throughput tool to screen desired vdW materials based on the Inorganic Crystal Structure Database. Through layers of filtration, we obtained 861 potential monolayers from 4997 vdW materials. Significantly, it is the first example to introduce flat-band electronic properties in the vdW materials and propose three families of representative flat-band materials by mapping two-dimensional (2D) flat-band lattice models. Unlike existing screening schemes, a simple, universal rule, i.e., 2D flat-band score criterion, is first proposed to efficiently identify 229 high-quality flat-band candidates, and guidance is provided to diagnose the quality of 2D flat bands. All these efforts to screen experimental available flat-band candidates will certainly motivate continuing exploration towards the realization of this class of special materials and their applications in material science.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

From Atomic Semimetal to Topological Nontrivial Insulator

Topological band insulators and (semi-) metals can arise out of atomic insulators when the hopping strength between electrons increases. Such topological phases are separated from the atomic insulator by a bulk gap closing. In this work, we show that in many (magnetic) space groups, the crystals with certain Wyckoff positions and orbitals being occupied must be semimetal or metals in the atomic limit, e.g. the hopping strength between electrons is infinite weak but not vanishing, which then are termed atomic (semi-)metals (ASMs). We derive a sufficient condition for realizing ASMs in spinless and spinful systems. Remarkably, we find that increasing the hopping strength between electrons may transform an ASM into an insulator with both symmetries and electron fillings of crystal are preserved. The induced insulators inevitably are topologically non-trivial and at least are obstructed atomic insulators (OAIs) that are labeled as trivial insulator in topological quantum chemistry website. Particularly, using silicon as an example, we show ASM criterion can discover the OAIs missed by the recently proposed criterion of filling enforced OAI. Our work not only establishes an efficient way to identify and design non-trivial insulators but also predicts that the group-IV elemental semiconductors are ideal candidate materials for OAI.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Two-dimensional Dirac semiconductor and its material realization

We propose a new concept of two-dimensional (2D) Dirac semiconductor which is characterized by the emergence of fourfold degenerate band crossings near the band edge and provide a generic approach to realize this novel semiconductor in the community of material science. Based on the first-principle calculations and symmetry analysis, we discover recently synthesised triple-layer (TL)-BiOS2 is such Dirac semiconductor that features Dirac cone at X/Y point, protected by nonsymmorphic symmetry. Due to sandwich-like structure, each Dirac fermion in TL-BiOS2 can be regarded as a combination of two Weyl fermions with opposite chiralities, degenerate in momentum-energy space but separated in real space. Such Dirac semiconductor carries layer-dependent helical spin textures that never been reported before. Moreover, novel topological phase transitions are flexibly achieved in TL-BiOS2: (i) an vertical electric field can drive it into Weyl semiconductor with switchable spin polarization direction, (ii) an extensive strain is able to generate ferroelectric polarization and actuate it into Weyl nodal ring around X point and into another type of four-fold degenerate point at Y point. Our work extends the Dirac fermion into semiconductor systems and provides a promising avenue to integrate spintronics and optoelectronics in topological materials.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Spin-Orbit-Induced Topological Flat Bands in Line and Split Graphs of Bipartite Lattices

Topological flat bands, such as the band in twisted bilayer graphene, are becoming a promising platform to study topics such as correlation physics, superconductivity, and transport. In this work, we introduce a generic approach to construct two-dimensional (2D) topological quasi-flat bands from line graphs and split graphs of bipartite lattices. A line graph or split graph of a bipartite lattice exhibits a set of flat bands and a set of dispersive bands. The flat band connects to the dispersive bands through a degenerate state at some momentum. We find that, with spin-orbit coupling (SOC), the flat band becomes quasi-flat and gapped from the dispersive bands. By studying a series of specific line graphs and split graphs of bipartite lattices, we find that (i) if the flat band (without SOC) has inversion or $C_2$ symmetry and is non-degenerate, then the resulting quasi-flat band must be topologically nontrivial, and (ii) if the flat band (without SOC) is degenerate, then there exists an SOC potential such that the resulting quasi-flat band is topologically nontrivial. This generic mechanism serves as a paradigm for finding topological quasi-flat bands in 2D crystalline materials and meta-materials.

0 citations0 reviewsNo code linkedOpen access