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Botao Fu

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cond-mat.mtrl-sci cond-mat.mes-hall physics.comp-ph

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preprint2026arXiv

Doping induced itinerant ferromagnetism and enhanced ferroelectricity in BL-InSe

The microscopic coexistence of ferroelectricity and ferromagnetism in solids remains a fundamental challenge in condensed matter physics, with far-reaching implications for multifunctional materials and next-generation electronic devices. Using first-principles calculations, we predict emergent sliding ferroelectricity and doping-mediated ferromagnetism in bilayer (BL) InSe. The energetically favored AB stacked BL-InSe spontaneously breaks the out-of-plane mirror symmetry, resulting in a switchable polarization with a saturated component of 0.089 pC/m and a low transition barrier of 28.8 meV per unit cell. Strikingly, low-concentration electrostatic doping enhances rather than suppresses the ferroelectric polarization due to the abnormal layer-dependent electronic occupation in BL-InSe, in contrast to the conventional screening paradigm. In addition, the characteristic Mexican-hat-shaped valence band enables doping-induced itinerant half-metallic ferromagnetism, where the interlayer spin density difference scales linearly with doping concentration and can be reversed by switching the polarization direction. These results demonstrate the coexistence of ferroelectric and ferromagnetic orders in BL-InSe and establish a viable platform for realizing voltage-tunable multiferroicity through stacking and carrier doping in otherwise nonpolar and nonmagnetic semiconductors.

preprint2026arXiv

Engineering Ideal 2D Type-II Nodal Line Semimetals via Stacking and Intercalation of van der Waals Layers

Two-dimensional type-II topological semimetals (TSMs), characterized by strongly tilted Dirac cones, have attracted intense interest for their unconventional electronic properties and exotic transport behaviors. However, rational design remains challenging due to the sensitivity of band tilting to lattice geometry, atomic coordination, and symmetry constraints. Here, we present a bottom-up approach to engineer ideal type-II nodal line semimetals (NLSMs) in van der Waals bilayers via atomic intercalation. Using monolayer $h$-AlN as a prototype, we show that fluorine-intercalated bilayer AlN (F@BL-AlN) hosts a symmetry-protected type-II nodal loop precisely at the Fermi level, enabled by preserved mirror symmetry ($\mathcal{M}_z$) and tailored interlayer hybridization. First-principles calculations reveal that fluorine not only tunes interlayer coupling but also aligns the Fermi energy with the nodal line, stabilizing the type-II NLSM phase. The system exhibits tunable electronic properties under external electric and strain fields and features a van Hove singularity that induces spontaneous ferromagnetism, realizing a ferromagnetic topological semimetal state. This work provides a versatile platform for designing type-II NLSMs and offers practical guidance for their experimental realization.

preprint2023arXiv

Hybrid Nodal-chain Semimetal State in MgCaN2

The distinct over-tilting of band crossings in topological semimetal generates the type-I and typeII classification of Dirac/Weyl and nodal-line fermions, accompanied by the exotic electronic and magnetic transport properties. In this work, we propose a concept of hybrid nodal-chain semimetal, which is identified by the linked type-I and type-II nodal rings in the Brillouin zone. Based on first-principles calculations and swarm-intelligence structure search technique, a new ternary nitride MgCaN2 crystal is proposed as the first candidate to realize a novel 3D hybrid nodal-chain state. Remarkably, a flat band is emergent as a characteristic signature of such a hybrid nodal-chain along certain direction in the momentum space, thereby serving a platform to explore the interplay between topological semimetal state and flat band. Moreover, the underlying protection mechanism of the hybrid nodal-chain is revealed by calculating the mirror Z2 invariant and developing a k.p effective Hamiltonian. Additionally, considerable drumhead-like surface states with unique connection patterns are illustrated to identify the non-trivial band topology, which may be measured by future experiments.

preprint2021arXiv

Two-dimensional Dirac semiconductor and its material realization

We propose a new concept of two-dimensional (2D) Dirac semiconductor which is characterized by the emergence of fourfold degenerate band crossings near the band edge and provide a generic approach to realize this novel semiconductor in the community of material science. Based on the first-principle calculations and symmetry analysis, we discover recently synthesised triple-layer (TL)-BiOS2 is such Dirac semiconductor that features Dirac cone at X/Y point, protected by nonsymmorphic symmetry. Due to sandwich-like structure, each Dirac fermion in TL-BiOS2 can be regarded as a combination of two Weyl fermions with opposite chiralities, degenerate in momentum-energy space but separated in real space. Such Dirac semiconductor carries layer-dependent helical spin textures that never been reported before. Moreover, novel topological phase transitions are flexibly achieved in TL-BiOS2: (i) an vertical electric field can drive it into Weyl semiconductor with switchable spin polarization direction, (ii) an extensive strain is able to generate ferroelectric polarization and actuate it into Weyl nodal ring around X point and into another type of four-fold degenerate point at Y point. Our work extends the Dirac fermion into semiconductor systems and provides a promising avenue to integrate spintronics and optoelectronics in topological materials.

preprint2020arXiv

Strain-tunable magnetism and nodal loops in monolayer MnB

Designing two-dimensional (2D) materials with magnetic and topological properties has continuously attracted intense interest in fundamental science and potential applications. Here, on the basis of first-principles calculations, we predict the coexistence of antiferromagnetism and Dirac nodal loop (NL) in the monolayer MnB, where the band crossing points are very close to the Fermi Level. Remarkably, a moderate strain can induce an antiferromagnetic to ferromagnetic phase transition, driving the monolayer MnB to a ferromagnetic metal with Weyl NLs. Such a type of topological quantum phase transition has not been observed before. In addition, the symmetry-protected properties of the two types of NLs as well as the magnetic critical temperatures are investigated. The controllable magnetic and topological order in monolayer MnB offers a unique platform for exploring topological quantum phase transitions and realizing nanospintronic devices.

preprint2020arXiv

Topological Nodal Line Electrides: Realization of Ideal Nodal Line State Nearly Immune from Spin-Orbit Coupling

Nodal line semimetals (NLSs) have attracted broad interest in current research. In most of existing NLSs, the intrinsic properties of nodal lines are greatly destroyed because nodal lines usually suffer sizable gaps induced by non-negligible spin-orbit coupling (SOC). In this work,we propose the topological nodal line electrides (TNLEs), which achieve electronic structures of nodal lines and electrides simultaneously, provide new insight on designing excellent NLSs nearly immune from SOC. Since the states near the Fermi level are most contributed by nonnucleus-bounded interstitial electrons, nodal lines in TNLEs manifest extremely small SOCinduced gap even possessing heavy elements. Especially, we propose the family of A2B (A = Ca, Sr, Ba; B= As, Sb, Bi) materials are realistic TNLEs with negligible SOC-induced gaps, which can play as excellent platforms to study the intrinsic properties of TNLEs

preprint2016arXiv

A new kind of 2D topological insulators BiCN with a giant gap and its substrate effects

Based on DFT calculation, we predict that BiCN, i.e., bilayer Bi films passivated with -CN group, is a novel 2D Bi-based material with highly thermodynamic stability, and demonstrate that it is also a new kind of 2D TI with a giant SOC gap (? 1 eV) by direct calculation of the topological invariant Z2 and obvious exhibition of the helical edge states. Monolayer h-BN and MoS2 are identified as good candidate substrates for supporting the nontrivial topological insulating phase of the 2D TI films, since the two substrates can stabilize and weakly interact with BiCN via van derWaals interaction and thus hardly affect the electronic properties, especially the band topology. The topological properties are robust against the strain and electric field. This may provide a promising platform for realization of novel topological phases.

preprint2014arXiv

Quantum spin Hall insulators and quantum valley Hall insulators of BiX/SbX (X = H, F, Cl, and Br) monolayers with a record bulk band gap

Large bulk band gap is critical for application of the quantum spin Hall (QSH) insulator or two dimensional (2D) topological insulator (TI) in spintronic device operating at room temperature (RT). Based on the first-principles calculations, here we predict a group of 2D topological insulators BiX/SbX (X = H, F, Cl, and Br) monolayers with extraordinarily large bulk gaps from 0.32 to a record value of 1.08 eV. These giant-gaps are entirely due to the result of strong spin-orbit interaction related to px and py orbitals of Bi/Sb atoms around the two valley K and K' of honeycomb lattice, which is different significantly from the one consisted of pz orbital just like in graphene/silicene. The topological characteristic of BiX/SbX monolayers is confirmed by the calculated nontrivial Z2 index and an explicit construction of the low energy effective Hamiltonian in these systems. We show that the honeycomb structures of BiX monolayers remain stable even at a temperature of 600 K. These features make the giant-gap TIs BiX/SbX monolayers an ideal platform to realize many exotic phenomena and fabricate new quantum devices operating at RT. Furthermore, biased BiX/SbX monolayers become a quantum valley Hall insulator, showing valley-selective circular dichroism.

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