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D. Rauh

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2 publications

preprint2012arXiv

Charge density dependent nongeminate recombination in organic bulk heterojunction solar cells

Apparent recombination orders exceeding the value of two expected for bimolecular recombination have been reported for organic solar cells in various publications. Two prominent explanations are bimolecular losses with a carrier concentration dependent prefactor due to a trapping limited mobility, and protection of trapped charge carriers from recombination by a donor--acceptor phase separation until reemission from these deep states. In order to clarify which mechanism is dominant we performed temperature and illumination dependent charge extraction measurements under open circuit as well as short circuit conditions at poly(3-hexylthiophene-2,5-diyl):[6,6]-phenyl-C61_{61}butyric acid methyl ester (P3HT:PC61_{61}BM) and PTB7:PC71_{71}BM (Poly[[4,8-bis[(2-ethylhexyl)oxy]benzo[1,2-b:4,5-b']dithiophene-2,6-diyl][3-fluoro-2-[(2-ethylhexyl)carbonyl]thieno[3,4-b]thiophenediyl]]) solar cells in combination with current--voltage characteristics. We show that the charge carrier density nn dependence of the mobility μμ and the recombination prefactor are different for PC61_{61}BM at temperatures below 300K and PTB7:PC71_{71}BM at room temperature. Therefore, in addition to μ(n)μ(n) a detrapping limited recombination in systems with at least partial donor--acceptor phase separation is required to explain the high recombination orders.

preprint2010arXiv

S-shaped current-voltage characteristics of organic solar devices

Measuring the current-voltage characteristic of organic bulk heterojunction solar devices sometimes reveals an s-shaped deformation. We qualitatively produce this behaviour by a numerical device simulation assuming a reduced surface recombination. Furthermore we show how to experimentally create these double diodes by applying an oxygen plasma etch on the indium tin oxide (ITO) anode. Restricted charge transport over material interfaces accumulates space charges and therefore creates s-shaped deformations. Finally we discuss the consequences of our findings for the open circuit voltage VocV_{oc}

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