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V. Dyakonov

V. Dyakonov appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mtrl-scicond-mat.mes-hallcond-mat.othercond-mat.soft

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Published work

24 published item(s)

preprint2022arXiv

Spin dynamics of electrons and holes interacting with nuclei in MAPbI$_3$ perovskite single crystals

Methylammonium lead triiodine (MAPbI$_3$) is a material representative of the hybrid organic-inorganic lead halide perovskites which attract currently great attention due to their photovoltaic efficiency and bright optoelectronic properties. Here, the coherent spin dynamics of charge carriers and spin dependent phenomena induced by the carrier interaction with nuclear spins are studied in MAPbI$_3$ single crystals, using time-resolved Kerr rotation at cryogenic temperatures in magnetic fields up to 3 T. Spin dephasing times up to a few nanoseconds and a longitudinal spin relaxation time of 37 ns are measured. The Larmor spin precession of both resident electrons and holes is identified in the Kerr rotation signals. The Landé factors ($g$-factors) in the orthorhombic crystal phase show a strong anisotropy, ranging for the holes from $-0.28$ to $-0.71$ and for the electrons from $+2.46$ to $+2.98$, while the $g$-factor dispersion of about 1% is rather small. An exciton $g$-factor of $+2.3$ is measured by magneto-reflectivity. A dynamic nuclear polarization by means of spin polarized electrons and holes is achieved in tilted magnetic fields giving access to the carrier-nuclei exchange interaction and the nuclei spin relaxation time exceeding 16 minutes.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Photon echo polarimetry of excitons and biexcitons in a CH$_3$NH$_3$PbI$_3$ perovskite single crystal

Lead halide perovskites show remarkable performance when used in photovoltaic and optoelectronic devices. However, the peculiarities of light-matter interactions in these materials in general are far from being fully explored experimentally and theoretically. Here we specifically address the energy level order of optical transitions and demonstrate photon echos in a methylammonium lead triiodide single crystal, thereby determining the optical coherence times $T_2$ for excitons and biexcitons at cryogenic temperature to be 0.79 ps and 0.67 ps, respectively. Most importantly, we have developed an experimental photon-echo polarimetry method that not only identifies the contributions from exciton and biexciton complexes, but also allows accurate determination of the biexciton binding energy of 2.4 meV, even though the period of quantum beats between excitons and biexcitons is much longer than the coherence times of the resonances. Our experimental and theoretical analysis methods contribute to the understanding of the complex mechanism of quasiparticle interactions at moderate pump density and show that even in high-quality perovskite crystals and at very low temperatures, inhomogeneous broadening of excitonic transitions due to local crystal potential fluctuations is a source of optical dephasing.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

The Landé factors of electrons and holes in lead halide perovskites: universal dependence on the band gap

The Landé or $g$-factors of charge carriers are decisive for the spin-dependent phenomena in solids and provide also information about the underlying electronic band structure. We present a comprehensive set of experimental data for values and anisotropies of the electron and hole Landé factors in hybrid organic-inorganic (MAPbI$_3$, MAPb(Br$_{0.5}$Cl$_{0.5}$)$_3$, MAPb(Br$_{0.05}$Cl$_{0.95}$)$_3$, FAPbBr$_3$, FA$_{0.9}$Cs$_{0.1}$PbI$_{2.8}$Br$_{0.2}$) and all-inorganic (CsPbBr$_3$) lead halide perovskites, determined by pump-probe Kerr rotation and spin-flip Raman scattering in magnetic fields up to 10~T at cryogenic temperatures. Further, we use first-principles DFT calculations in combination with tight-binding and $\mathbf k \cdot \mathbf p$ approaches to calculate microscopically the Landé factors. The results demonstrate their universal dependence on the band gap energy across the different perovskite material classes, which can be summarized in a universal semi-phenomenological expression, in good agreement with experiment.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Influence of irradiation on defect spin coherence in silicon carbide

Irradiation-induced lattice defects in silicon carbide (SiC) have already exceeded their previous reputation as purely performance-inhibiting. With their remarkable quantum properties, such as long room-temperature spin coherence and the possibility of downscaling to single-photon source level, they have proven to be promising candidates for a multitude of quantum information applications. One of the most crucial parameters of any quantum system is how long its quantum coherence can be preserved. By using the pulsed optically detected magnetic resonance (ODMR) technique, we investigate the spin-lattice relaxation time ($T_1$) and spin coherence time ($T_2$) of silicon vacancies in 4H-SiC created by neutron, electron and proton irradiation in a broad range of fluences. We also examine the effect of irradiation energy and sample annealing. We establish a robustness of the $T_1$ time against all types of irradiation and reveal a universal scaling of the $T_2$ time with the emitter density. Our results can be used to optimize the coherence properties of silicon vacancy qubits in SiC for specific tasks.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

All-optical dc nanotesla magnetometry using silicon vacancy fine structure in isotopically purified silicon carbide

We uncover the fine structure of a silicon vacancy in isotopically purified silicon carbide (4H-$^{28}$SiC) and find extra terms in the spin Hamiltonian, originated from the trigonal pyramidal symmetry of this spin-3/2 color center. These terms give rise to additional spin transitions, which are otherwise forbidden, and lead to a level anticrossing in an external magnetic field. We observe a sharp variation of the photoluminescence intensity in the vicinity of this level anticrossing, which can be used for a purely all-optical sensing of the magnetic field. We achieve dc magnetic field sensitivity of 87 nT Hz$^{-1/2}$ within a volume of $3 \times 10^{-7}$ mm$^{3}$ at room temperature and demonstrate that this contactless method is robust at high temperatures up to at least 500 K. As our approach does not require application of radiofrequency fields, it is scalable to much larger volumes. For an optimized light-trapping waveguide of 3 mm$^{3}$ the projection noise limit is below 100 fT Hz$^{-1/2}$.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Optical thermometry based on level anticrossing in silicon carbide

We report a giant thermal shift of $2.1 \,$MHz/K related to the excited-state zero-field splitting in the silicon vacancy centers in 4H silicon carbide. It is obtained from the indirect observation of the optically detected magnetic resonance in the excited state using the ground state as an ancilla. Alternatively, relative variations of the zero-field splitting for small temperature differences can be detected without application of radiofrequency fields, by simply monitoring the photoluminescence intensity in the vicinity of the level anticrossing. This effect results in an all-optical thermometry technique with temperature sensitivity of $100 \,$mK/Hz$^{1/2}$ for a detection volume of approximately $10^{-6} \,$mm$^{3}$. In contrast, the zero-field splitting in the ground state does not reveal detectable temperature shift. Using these properties, an integrated magnetic field and temperature sensor can be implemented on the same center.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

High precision vector magnetometry with uniaxial quantum centers in silicon carbide

We show that uniaxial color centers in silicon carbide with hexagonal lattice structure can be used to measure not only the strength but also the polar angle of the external magnetic field with respect to the defect axis with high precision. The method is based on the optical detection of multiple spin resonances in the silicon vacancy defect with quadruplet ground state. We achieve a perfect agreement between the experimental and calculated spin resonance spectra without any fitting parameters, providing angle resolution of a few degrees in the magnetic field range up to several millitesla. Our approach is suitable for ensembles as well as for single spin-3/2 color centers, allowing for vector magnetometry on the nanoscale at ambient conditions.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Engineering near infrared single photon emitters in ultrapure silicon carbide

Quantum emitters hosted in crystalline lattices are highly attractive candidates for quantum information processing, secure networks and nanosensing. For many of these applications it is necessary to have control over single emitters with long spin coherence times. Such single quantum systems have been realized using quantum dots, colour centres in diamond, dopants in nanostructures and molecules . More recently, ensemble emitters with spin dephasing times on the order of microseconds and room-temperature optically detectable magnetic resonance have been identified in silicon carbide (SiC), a compound being highly compatible to up-to-date semiconductor device technology. So far however, the engineering of such spin centres in SiC on single-emitter level has remained elusive. Here, we demonstrate the control of spin centre density in ultrapure SiC over 8 orders of magnitude, from below $10^{9}$ to above $10^{16} \,$cm$^{-3}$ using neutron irradiation. For a low irradiation dose, a fully photostable, room-temperature, near infrared (NIR) single photon emitter can clearly be isolated, demonstrating no bleaching even after $10^{14}$ excitation cycles. Based on their spectroscopic fingerprints, these centres are identified as silicon vacancies, which can potentially be used as qubits, spin sensors and maser amplifiers.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Excitation and recombination dynamics of vacancy-related spin centers in silicon carbide

We generate silicon vacancy related defects in high-quality epitaxial silicon carbide layers by means of electron irradiation. By controlling the irradiation fluence, the defect concentration is varied over several orders of magnitude. We establish the excitation profile for optical pumping of these defects and evaluate the optimum excitation wavelength of 770 nm. We also measure the photoluminescence dynamics at room temperature and find a monoexponential decay with a characteristic lifetime of 6.1 ns. The integrated photoluminescence intensity depends linear on the excitation power density up to 20 kW/cm$^2$, indicating a relatively small absorption cross section of these defects.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Magnetic field and temperature sensing with atomic-scale spin defects in silicon carbide

Quantum systems can provide outstanding performance in various sensing applications, ranging from bioscience to nanotechnology. Atomic-scale defects in silicon carbide are very attractive in this respect because of the technological advantages of this material and favorable optical and radio frequency spectral ranges to control these defects. We identified several, separately addressable spin-3/2 centers in the same silicon carbide crystal, which are immune to nonaxial strain fluctuations. Some of them are characterized by nearly temperature independent axial crystal fields, making these centers very attractive for vector magnetometry. Contrarily, the zero-field splitting of another center exhibits a giant thermal shift of -1.1 MHz/K at room temperature, which can be used for thermometry applications. We also discuss a synchronized composite clock exploiting spin centers with different thermal response.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Persistent photovoltage in methylammonium lead iodide perovskite solar cells

Open circuit voltage decay measurements are performed on methylammonium lead iodide (CH3NH3PbI3) perovskite solar cells to investigate the charge carrier recombination dynamics. The measurements are compared to the two reference polymer-fullerene bulk heterojunction solar cells based on P3HT:PC60BM and PTB7:PC70BM blends. In the perovskite devices, two very different time domains of the voltage decay are found, with a first drop on a short time scale that is similar to the organic solar cells. However, two major differences are also observed. 65-70% of the maximum photovoltage persists on much longer timescales, and the recombination dynamics are dependent on the illumination intensity.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Room-temperature near-infrared silicon carbide nanocrystalline emitters based on optically aligned spin defects

Bulk silicon carbide (SiC) is a very promising material system for bio-applications and quantum sensing. However, its optical activity lies beyond the near infrared spectral window for in-vivo imaging and fiber communications due to a large forbidden energy gap. Here, we report the fabrication of SiC nanocrystals and isolation of different nanocrystal fractions ranged from 600 nm down to 60 nm in size. The structural analysis reveals further fragmentation of the smallest nanocrystals into ca. 10-nm-size clusters of high crystalline quality, separated by amorphization areas. We use neutron irradiation to create silicon vacancies, demonstrating near infrared photoluminescence. Finally, we detect, for the first time, room-temperature spin resonances of these silicon vacancies hosted in SiC nanocrystals. This opens intriguing perspectives to use them not only as in-vivo luminescent markers, but also as magnetic field and temperature sensors, allowing for monitoring various physical, chemical and biological processes.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Charge density dependent nongeminate recombination in organic bulk heterojunction solar cells

Apparent recombination orders exceeding the value of two expected for bimolecular recombination have been reported for organic solar cells in various publications. Two prominent explanations are bimolecular losses with a carrier concentration dependent prefactor due to a trapping limited mobility, and protection of trapped charge carriers from recombination by a donor--acceptor phase separation until reemission from these deep states. In order to clarify which mechanism is dominant we performed temperature and illumination dependent charge extraction measurements under open circuit as well as short circuit conditions at poly(3-hexylthiophene-2,5-diyl):[6,6]-phenyl-C$_{61}$butyric acid methyl ester (P3HT:PC$_{61}$BM) and PTB7:PC$_{71}$BM (Poly[[4,8-bis[(2-ethylhexyl)oxy]benzo[1,2-b:4,5-b']dithiophene-2,6-diyl][3-fluoro-2-[(2-ethylhexyl)carbonyl]thieno[3,4-b]thiophenediyl]]) solar cells in combination with current--voltage characteristics. We show that the charge carrier density $n$ dependence of the mobility $μ$ and the recombination prefactor are different for PC$_{61}$BM at temperatures below 300K and PTB7:PC$_{71}$BM at room temperature. Therefore, in addition to $μ(n)$ a detrapping limited recombination in systems with at least partial donor--acceptor phase separation is required to explain the high recombination orders.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Intrinsic defects in silicon carbide LED as a perspective room temperature single photon source in near infrared

Generation of single photons has been demonstrated in several systems. However, none of them satisfies all the conditions, e.g. room temperature functionality, telecom wavelength operation, high efficiency, as required for practical applications. Here, we report the fabrication of light emitting diodes (LEDs) based on intrinsic defects in silicon carbide (SiC). To fabricate our devices we used a standard semiconductor manufacturing technology in combination with high-energy electron irradiation. The room temperature electroluminescence (EL) of our LEDs reveals two strong emission bands in visible and near infrared (NIR), associated with two different intrinsic defects. As these defects can potentially be generated at a low or even single defect level, our approach can be used to realize electrically driven single photon source for quantum telecommunication and information processing.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Magnetic anisotropy of La0.7Sr0.3MnO3 nanopowders

The magnetic anisotropy of La0.7Sr0.3MnO3 nanopowders was measured as a function of temperature by the modified singular point detection technique. In this method singularities indicating the anisotropy field were determined analyzing ac susceptibility data. The observed relationship between temperature dependence of anisotropy constant and temperature dependence of magnetization was used to deduce the origin of magnetic anisotropy in the nanopowders. It was shown that magnetic anisotropy of La0.7Sr0.3MnO3 nanopowder is determined by two-ion (dipolar or pseudodipolar) and single-ion mechanisms.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Resonant addressing and manipulation of silicon vacancy qubits in silicon carbide

Several systems in the solid state have been suggested as promising candidates for spin-based quantum information processing. In spite of significant progress during the last decade, there is a search for new systems with higher potential [D. DiVincenzo, Nature Mat. 9, 468 (2010)]. We report that silicon vacancy defects in silicon carbide comprise the technological advantages of semiconductor quantum dots and the unique spin properties of the nitrogen-vacancy defects in diamond. Similar to atoms, the silicon vacancy qubits can be controlled under the double radio-optical resonance conditions, allowing for their selective addressing and manipulation. Furthermore, we reveal their long spin memory using pulsed magnetic resonance technique. All these results make silicon vacancy defects in silicon carbide very attractive for quantum applications.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Shockley Equation Parameters of Organic Solar Cells derived by Transient Techniques

The Shockley equation (SE), originally derived to describe a p--n junction, was frequently used in the past to simulate current--voltage (j/V) characteristics of organic solar cells (OSC). In order to gain a more detailed understanding of recombination losses, we determined the SE parameters, i.e. the ideality factor and the dark saturation current, from temperature dependent static j/V-measurements on poly(3-hexylthiophene-2,5-diyl)(P3HT):[6,6]-phenyl-C$_{61}$ butyric acid methyl ester (PCBM) bulk heterojunction solar cells. As we show here, these parameters are directly related to charge carrier recombination and become also accessible by transient photovoltage and photocurrent methods in the case of field-independent charge carrier generation. Although determined in very different ways, both SE parameters were found to be identical. The good agreement of static and transient approaches over a wide temperature range demonstrates the validity of the Shockley model for OSC based on material systems satisfying the requirement of field-independent polaron-pair dissociation. In particular, we were able to reproduce the photocurrent at various light intensities and temperatures from the respective nongeminate recombination rates. Furthermore, the temperature dependence of the dark saturation current $j_0$ allowed determining the effective band gap of the photoactive blend perfectly agreeing with the literature values of the energy onset of the photocurrent due to charge transfer absorption. We also present a consistent model directly relating the ideality factor to recombination of free with trapped charge carriers in an exponential density of tail states. We verify this finding by data from thermally stimulated current measurements.

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preprint2010arXiv

Investigation of the Photocurrent in Bulk Heterojunction Solar Cells

We investigated the photocurrent in poly(3-hexylthiophene-2,5-diyl) (P3HT):[6,6]-phenyl-C$_{61}$ butyric acid methyl ester (PCBM) solar cells by applying a pulsed measurement technique. For annealed samples, a point of optimal symmetry (POS) with a corresponding voltage $V_\text{POS}$ of 0.52--0.64 V could be determined. Based on macroscopic simulations and results from capacitance--voltage measurements, we identify this voltage with flat band conditions in the bulk of the cell, but not the built-in voltage as proposed by [Ooi et al., J. Mater. Chem. 18 (2008) 1644]. We calculated the field dependent polaron pair dissociation after Onsager--Braun and the voltage dependent extraction of charge carriers after Sokel and Hughes with respect to this point of symmetry. Our analysis allows to explain the experimental photocurrent in both forward and reverse directions. Also, we observed a voltage--independent offset of the photocurrent. As this offset is crucial for the device performance, we investigated its dependence on cathode material and thermal treatment. From our considerations we gain new insight into the photocurrent`s voltage dependence and the limitations of device efficiency.

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preprint2010arXiv

Organic solar cell efficiencies under the aspect of reduced surface recombination velocities

The charge carrier mobility is a key parameter for the organic bulk heterojunction solar cell efficiency. It was recently shown that the interplay charge carrier transport and recombination, both depending on electron and hole mobilities, leads to a point of maximum power conversion efficiency at a finite mobility. Changes of bulk and surface recombination rate, however, can strongly influence this behavior. These processes were previously not considered adequately, as surface recombination velocities of infinity were implicitly assumed or bulk recombination parameters not discussed in detail. In this manuscript, using a macroscopic effective medium simulation, we consider how a reduced bulk recombination process in combination with finite surface recombination velocities affect the power conversion efficiency. Instead of a maximum efficiency at a specific charge carrier mobility, we show that with realistic assumptions and passivated surfaces the efficiency is increased further, saturating only at higher mobilities. Thus, a mobility optimisation is more important for the solar cell performance then previously shown.

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preprint2010arXiv

Role of Polaron Pair Diffusion and Surface Losses in Organic Semiconductor Devices

By applying Monte Carlo simulations we found that the extraction of bound polaron pairs (PP) at the electrodes is an important loss factor limiting the efficiency of organic optoelectronic and photovoltaic devices. Based upon this finding, we developed a unified analytic model consisting of exact Onsager theory, describing the dissociation of PP in organic donor-acceptor heterojunctions, the Sokel-Hughes model for the extraction of free polarons at the electrodes, as well as of PP diffusion leading to the aforementioned loss mechanism, which was not considered previously. Our approach allows to describe the simulation details on a macroscopic scale and to gain fundamental insights, which is important in view of developing an optimized photovoltaic device configuration.

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preprint2010arXiv

S-shaped current-voltage characteristics of organic solar devices

Measuring the current-voltage characteristic of organic bulk heterojunction solar devices sometimes reveals an s-shaped deformation. We qualitatively produce this behaviour by a numerical device simulation assuming a reduced surface recombination. Furthermore we show how to experimentally create these double diodes by applying an oxygen plasma etch on the indium tin oxide (ITO) anode. Restricted charge transport over material interfaces accumulates space charges and therefore creates s-shaped deformations. Finally we discuss the consequences of our findings for the open circuit voltage $V_{oc}$

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preprint2010arXiv

Spectroscopic Signatures of Photogenerated Radical Anions in Polymer-[C70]Fullerene Bulk Heterojunctions

Light induced polarons in solid films of polymer-fullerene blends were studied by applying photoluminescence (PL), photo induced absorption (PIA) techniques as well as electron spin resonance (ESR). The materials used were poly(3-hexylthiophene) (P3HT) and poly-[2-methoxy, 5-(2'-ethyl-hexyloxy) phenylene vinylene] (MEH-PPV) as donors. As acceptors we used [6,6]-phenyl-C61-butyric acid methyl ester ([C60]PCBM) and various soluble C70-derivates: [C70]PCBM, diphenylmethano[70]fullerene oligoether (C70-DPM-OE), C70-DPM-OE2, and two fullerene dimers, C70-C70 and C60-C70 (all shown in figure 1). In all blends containing C70 we found typical signatures which were absent if [C60]PCBM was used as acceptor. Light-induced ESR revealed signals at g>=2.005, which we previously assigned to an electron localized on the C70 cage, the PIA measurements showed a new sub-bandgap absorption band at 0.92 eV, which we correspondingly ascribe to C70 radical anions formed in the course of photoinduced electron transfer from donor to acceptor.

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preprint2009arXiv

Polaron Recombination in Pristine and Annealed Bulk Heterojunction Solar Cells

The major loss mechanism of photogenerated polarons was investigated in P3HT:PCBM solar cells by the photo-CELIV technique. For pristine and annealed devices, we find that the experimental data can be explained by a bimolecular recombination rate reduced by a factor of about ten (pristine) and 25 (annealed) as compared to Langevin theory. Aided by a macroscopic device model, we discuss the implications of the lowered loss rate on the characteristics of polymer:fullerene solar cells.

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preprint2008arXiv

Influence of Charge Carrier Mobility on the Performance of Organic Solar Cells

The power conversion efficiency of organic solar cells based on donor--acceptor blends is governed by an interplay of polaron pair dissociation and bimolecular polaron recombination. Both processes are strongly dependent on the charge carrier mobility, the dissociation increasing with faster charge transport, with raised recombination losses at the same time. Using a macroscopic effective medium simulation, we calculate the optimum charge carrier mobility for the highest power conversion efficiency, for the first time accounting for injection barriers and a reduced Langevin-type recombination. An enhancement of the charge carrier mobility from $10^{-8}$m$^2$/Vs for state of the art polymer:fullerene solar cells to about $10^{-6}$m$^2$/Vs, which yields the maximum efficiency, corresponds to an improvement of only about 20% for the given parameter set.

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