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Researcher profile

G. Mussler

G. Mussler contributes to research discovery and scholarly infrastructure.

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cond-mat.mes-hallcond-mat.mtrl-scicond-mat.quant-gascond-mat.str-el

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Published work

7 published item(s)

preprint2022arXiv

Circular photogalvanic effects in topological insulator/ferromagnet hybrid structures

We study laser driven spin-current effects at ferromagnet/topological-insulator interfaces by two complementary experimental approaches. The DC photocurrent is studied in ferromagnet/topological-insulator bilayers with high spatial resolution. Dynamic interface currents are explored via the emission of terahertz radiation emitted by these currents with high temporal resolution. From our experiments, we reveal a lateral and dynamic interaction of the ferromagnet and the topological insulator interface.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Growth, characterization, and transport properties of ternary (Bi1-xSbx)2Te3 topological insulator layers

Ternary (Bi1-xSbx)2Te3 films with an Sb content between 0 and 100% were deposited on a Si(111) substrate by means of molecular beam epitaxy. X-ray diffraction measurements confirm single crystal growth in all cases. The Sb content is determined by X-ray photoelectron spectroscopy. Consistent values of the Sb content are obtained from Raman spectroscopy. Scanning Raman spectroscopy reveals that the (Bi1-xSbx)2Te3 layers with an intermediate Sb content show spatial composition inhomogeneities. The observed spectra broadening in angular-resolved photoemission spectroscopy (ARPES) is also attributed to this phenomena. Upon increasing the Sb content from x=0 to 1 the ARPES measurements show a shift of the Fermi level from the conduction band to the valence band. This shift is also confirmed by corresponding magnetotransport measurements where the conductance changes from n- to p-type. In this transition region, an increase of the resistivity is found, indicating a location of the Fermi level within the band gap region. More detailed measurements in the transition region reveals that the transport takes place in two independent channels. By means of a gate electrode the transport can be changed from n- to p-type, thus allowing a tuning of the Fermi level within the topologically protected surface states.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Coherent ultrafast spin-dynamics probed in three dimensional topological insulators

Topological insulators are candidates to open up a novel route in spin based electronics. Different to traditional ferromagnetic materials, where the carrier spin-polarization and magnetization are based on the exchange interaction, the spin properties in topological insulators are based on the coupling of spin- and orbit interaction connected to its momentum. Specific ways to control the spin-polarization with light have been demonstrated: the energy momentum landscape of the Dirac cone provides spin-momentum locking of the charge current and its spin. The directionality of spin and momentum, as well as control with light has been demonstrated. Here we demonstrate a coherent femtosecond control of spin-polarization for states in the valence band at around the Dirac cone.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Photon Drag Effect in (Bi$_{1-x}$Sb$_{x}$)$_{2}$Te$_{3}$ Three Dimensional Topological Insulators

We report on the observation of a terahertz radiation induced photon drag effect in epitaxially grown $n$- and $p$-type (Bi$_{1-x}$Sb$_{x}$)$_{2}$Te$_{3}$ three dimensional topological insulators with different antimony concentrations $x$ varying from 0 to 1. We demonstrate that the excitation with polarized terahertz radiation results in a $dc$ electric photocurrent. While at normal incidence a current arises due to the photogalvanic effect in the surface states, at oblique incidence it is outweighed by the trigonal photon drag effect. The developed microscopic model and theory show that the photon drag photocurrent is due to the dynamical momentum alignment by time and space dependent radiation electric field and implies the radiation induced asymmetric scattering in the electron momentum space.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Room temperature high frequency transport of Dirac fermions in epitaxially grown Sb_2Te_3 based topological insulators

We report on the observation of photogalvanic effects in epitaxially grown Sb_2Te_3 three-dimensional (3D) topological insulators (TI). We show that asymmetric scattering of Dirac electrons driven back and forth by the terahertz electric field results in a dc electric current. Due to the "symmetry filtration" the dc current is generated in the surface electrons only and provides an opto-electronic access to probe the electric transport in TI, surface domains orientation and details of electron scattering even in 3D TI at room temperature where conventional surface electron transport is usually hindered by the high carrier density in the bulk.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

On the nature of the spin polarization limit in the warped Dirac cone of the Bi2Te3

The magnitude of electron spin polarization in topologically protected surface states is an important parameter with respect to spintronics applications. In order to analyze the warped spin texture in Bi$_2$Te$_3$ thin films, we combine angle- and spin-resolved photoemission experiments with theoretical \textit{ab initio} calculations. We find an \textit{in-plane} spin polarization of up to $\sim$~45\% in the topologically protected Dirac cone states near the Fermi level. The Fermi surface of the Dirac cone state is warped and shows an \textit{out-of-plane} spin polarization of $\sim$~15\%. These findings are in quantitative agreement with dedicated simulations which find electron density of the Dirac cone delocalized over the first quintuple layer with spin reversal occurring in the surface atomic layer.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Robust surface electronic properties of topological insulators: Bi2Te3 films grown by molecular beam epitaxy

The surface electronic properties of the important topological insulator Bi2Te3 are shown to be robust under an extended surface preparation procedure which includes exposure to atmosphere and subsequent cleaning and recrystallization by an optimized in-situ sputter-anneal procedure under ultra high vacuum conditions. Clear Dirac-cone features are displayed in high-resolution angle-resolved photoemission spectra from the resulting samples, indicating remarkable insensitivity of the topological surface state to cleaning-induced surface roughness.

0 citations0 reviewsNo code linkedOpen access