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Source author record

D. D. Awschalom

D. D. Awschalom appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mes-hallcond-mat.mtrl-sciquant-phcond-mat.otherphysics.app-phphysics.optics

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Published work

41 published item(s)

preprint2022arXiv

Enhancing Spin Coherence in Optically Addressable Molecular Qubits through Host-Matrix Control

Optically addressable spins are a promising platform for quantum information science due to their combination of a long-lived qubit with a spin-optical interface for external qubit control and read out. The ability to chemically synthesize such systems - to generate optically addressable molecular spins - offers a modular qubit architecture which can be transported across different environments, and atomistically tailored for targeted applications through bottom-up design and synthesis. Here we demonstrate how the spin coherence in such optically addressable molecular qubits can be controlled through engineering their host environment. By inserting chromium (IV)-based molecular qubits into a non-isostructural host matrix, we generate noise-insensitive clock transitions, through a transverse zero-field splitting, that are not present when using an isostructural host. This host-matrix engineering leads to spin-coherence times of more than 10 microseconds for optically addressable molecular spin qubits in a nuclear and electron-spin rich environment. We model the dependence of spin coherence on transverse zero-field splitting from first principles and experimentally verify the theoretical predictions with four distinct molecular systems. Finally, we explore how to further enhance optical-spin interfaces in molecular qubits by investigating the key parameters of optical linewidth and spin-lattice relaxation time. Our results demonstrate the ability to test qubit structure-function relationships through a tunable molecular platform and highlight opportunities for using molecular qubits for nanoscale quantum sensing in noisy environments.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Quantum engineering with hybrid magnonics systems and materials

Quantum technology has made tremendous strides over the past two decades with remarkable advances in materials engineering, circuit design and dynamic operation. In particular, the integration of different quantum modules has benefited from hybrid quantum systems, which provide an important pathway for harnessing the different natural advantages of complementary quantum systems and for engineering new functionalities. This review focuses on the current frontiers with respect to utilizing magnetic excitatons or magnons for novel quantum functionality. Magnons are the fundamental excitations of magnetically ordered solid-state materials and provide great tunability and flexibility for interacting with various quantum modules for integration in diverse quantum systems. The concomitant rich variety of physics and material selections enable exploration of novel quantum phenomena in materials science and engineering. In addition, the relative ease of generating strong coupling and forming hybrid dynamic systems with other excitations makes hybrid magnonics a unique platform for quantum engineering. We start our discussion with circuit-based hybrid magnonic systems, which are coupled with microwave photons and acoustic phonons. Subsequently, we are focusing on the recent progress of magnon-magnon coupling within confined magnetic systems. Next we highlight new opportunities for understanding the interactions between magnons and nitrogen-vacancy centers for quantum sensing and implementing quantum interconnects. Lastly, we focus on the spin excitations and magnon spectra of novel quantum materials investigated with advanced optical characterization.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Optically addressable molecular spins for quantum information processing

Spin-bearing molecules are promising building blocks for quantum technologies as they can be chemically tuned, assembled into scalable arrays, and readily incorporated into diverse device architectures. In molecular systems, optically addressing ground-state spins would enable a wide range of applications in quantum information science, as has been demonstrated for solid-state defects. However, this important functionality has remained elusive for molecules. Here, we demonstrate such optical addressability in a series of synthesized organometallic, chromium(IV) molecules. These compounds display a ground-state spin that can be initialized and read out using light, and coherently manipulated with microwaves. In addition, through atomistic modification of the molecular structure, we tune the spin and optical properties of these compounds, paving the way for designer quantum systems synthesized from the bottom-up.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Purcell enhancement of a single silicon carbide color center with coherent spin control

Silicon carbide has recently been developed as a platform for optically addressable spin defects. In particular, the neutral divacancy in the 4H polytype displays an optically addressable spin-1 ground state and near-infrared optical emission. Here, we present the Purcell enhancement of a single neutral divacancy coupled to a photonic crystal cavity. We utilize a combination of nanolithographic techniques and a dopant-selective photoelectrochemical etch to produce suspended cavities with quality factors exceeding 5,000. Subsequent coupling to a single divacancy leads to a Purcell factor of ~50, which manifests as increased photoluminescence into the zero-phonon line and a shortened excited-state lifetime. Additionally, we measure coherent control of the divacancy ground state spin inside the cavity nanostructure and demonstrate extended coherence through dynamical decoupling. This spin-cavity system represents an advance towards scalable long-distance entanglement protocols using silicon carbide that require the interference of indistinguishable photons from spatially separated single qubits.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Quantum well stabilized point defect spin qubits

Defect-based quantum systems in in wide bandgap semiconductors are strong candidates for scalable quantum-information technologies. However, these systems are often complicated by charge-state instabilities and interference by phonons, which can diminish spin-initialization fidelities and limit room-temperature operation. Here, we identify a pathway around these drawbacks by showing that an engineered quantum well can stabilize the charge state of a qubit. Using density-functional theory and experimental synchrotron x-ray diffraction studies, we construct a model for previously unattributed point defect centers in silicon carbide (SiC) as a near-stacking fault axial divacancy and show how this model explains these defect's robustness against photoionization and room temperature stability. These results provide a materials-based solution to the optical instability of color centers in semiconductors, paving the way for the development of robust single-photon sources and spin qubits.

0 citations0 reviewsNo code linkedOpen access
preprint2018arXiv

Quantum control of surface acoustic wave phonons

The superposition of quantum states is one of the hallmarks of quantum physics, and clear demonstrations of superposition have been achieved in a number of quantum systems. However, mechanical systems have remained a challenge, with only indirect demonstrations of mechanical state superpositions, in spite of the intellectual appeal and technical utility such a capability would bring. This is due in part to the highly linear response of most mechanical systems, making quantum operation difficult, as well as their characteristically low frequencies, making it difficult to reach the quantum ground state. In this work, we demonstrate full quantum control of the mechanical state of a macroscopic mechanical resonator. We strongly couple a surface acoustic wave resonator to a superconducting qubit, using the qubit to control and measure quantum states in the mechanical resonator. Most notably, we generate a quantum superposition of the zero and one phonon states and map this and other states using Wigner tomography. This precise, programmable quantum control is essential to a range of applications of surface acoustic waves in the quantum limit, including using surface acoustic waves to couple disparate quantum systems.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Decoherence of near-surface nitrogen-vacancy centers due to electric field noise

We show that electric field noise from surface charge fluctuations can be a significant source of spin decoherence for near-surface nitrogen-vacancy (NV) centers in diamond. This conclusion is based on the increase in spin coherence observed when the diamond surface is covered with high-dielectric-constant liquids, such as glycerol. Double resonance experiments show that improved coherence occurs even though the coupling to nearby electron spins is unchanged when the liquid is applied. Multipulse spin echo experiments reveal the effect of glycerol on the spectrum of NV frequency noise.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Multipulse Double-Quantum Magnetometry With Near-Surface Nitrogen Vacancy Centers

We discuss multipulse magnetometry that exploits all three magnetic sublevels of the S=1 nitrogen-vacancy center in diamond to achieve enhanced magnetic field sensitivity. Based on dual frequency microwave pulsing, the scheme works in arbitrary magnetic bias fields and is twice as sensitive to ac magnetic fields as conventional two-level magnetometry. We derive the spin evolution operator for dual frequency microwave excitation and show its effectiveness for double-quantum state swaps. Using multipulse sequences of up to 128 pulses under optimized conditions, we show enhancement of the SNR by up to a factor of 2 in detecting NMR statistical signals, with a 4 times enhancement theoretically possible.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Suppressing Spectral Diffusion of the Emitted Photons with Optical Pulses

In many quantum architectures the solid-state qubits, such as quantum dots or color centers, are interfaced via emitted photons. However, the frequency of photons emitted by solid-state systems exhibits slow uncontrollable fluctuations over time (spectral diffusion), creating a serious problem for implementation of the photon-mediated protocols. Here we show that a sequence of optical pulses applied to the solid-state emitter can stabilize the emission line at the desired frequency. We demonstrate efficiency, robustness, and feasibility of the method analytically and numerically. Taking nitrogen-vacancy (NV) center in diamond as an example, we show that only several pulses, with the width of 1 ns, separated by few ns (which is not difficult to achieve) can suppress spectral diffusion. Our method provides a simple and robust way to greatly improve the efficiency of photon-mediated entanglement and/or coupling to photonic cavities for solid-state qubits.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Dynamic nuclear polarization from current-induced electron spin polarization

Current-induced electron spin polarization is shown to produce nuclear hyperpolarization through dynamic nuclear polarization. Saturated fields of several millitesla are generated upon the application of electric field over a timescale of a hundred seconds in InGaAs epilayers and measured using optical Larmor magnetometry. The dependence on temperature, external magnetic field, and applied voltage is investigated. We find an asymmetry in which the saturation nuclear field depends on the relative alignment of the electrically generated spin polarization and the external magnetic field, which we attribute to an interplay between various electron spin dynamical processes.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Electrical spin protection and manipulation via gate-locked spin-orbit fields

The spin-orbit (SO) interaction couples electron spin and momentum via a relativistic, effective magnetic field. While conveniently facilitating coherent spin manipulation in semiconductors, the SO interaction also inherently causes spin relaxation. A unique situation arises when the Rashba and Dresselhaus SO fields are matched, strongly protecting spins from relaxation, as recently demonstrated. Quantum computation and spintronics devices such as the paradigmatic spin transistor could vastly benefit if such spin protection could be expanded from a single point into a broad range accessible with in-situ gate-control, making possible tunable SO rotations under protection from relaxation. Here, we demonstrate broad, independent control of all relevant SO fields in GaAs quantum wells, allowing us to tune the Rashba and Dresselhaus SO fields while keeping both locked to each other using gate voltages. Thus, we can electrically control and simultaneously protect the spin. Our experiments employ quantum interference corrections to electrical conductivity as a sensitive probe of SO coupling. Finally, we combine transport data with numerical SO simulations to precisely quantify all SO terms.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Proton magnetic resonance imaging with a nitrogen-vacancy spin sensor

Nuclear magnetic resonance (NMR) imaging with nanometer resolution requires new detection techniques with sensitivity well beyond the capability of conventional inductive detection. Here, we demonstrate two dimensional imaging of $^1$H NMR from an organic test sample using a single nitrogen-vacancy center in diamond as the sensor. The NV center detects the oscillating magnetic field from precessing protons in the sample as the sample is scanned past the NV center. A spatial resolution of 12 nm is shown, limited primarily by the scan accuracy. With further development, NV-detected magnetic resonance imaging could lead to a new tool for three-dimensional imaging of complex nanostructures, including biomolecules.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Electrically driven spin resonance in silicon carbide color centers

We demonstrate that the spin of optically addressable point defects can be coherently driven with AC electric fields. Based on magnetic-dipole forbidden spin transitions, this scheme enables spatially confined spin control, the imaging of high-frequency electric fields, and the characterization of defect spin multiplicity. While we control defects in SiC, these methods apply to spin systems in many semiconductors, including the nitrogen-vacancy center in diamond. Electrically driven spin resonance offers a viable route towards scalable quantum control of electron spins in a dense array.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Ferromagnetism and infrared electrodynamics of Ga$_{1-x}$Mn$_{x}$As}

We report on the magnetic and the electronic properties of the prototype dilute magnetic semiconductor Ga$_{1-x}$Mn$_x$As using infrared (IR) spectroscopy. Trends in the ferromagnetic transition temperature $T_C$ with respect to the IR spectral weight are examined using a sum-rule analysis of IR conductivity spectra. We find non-monotonic behavior of trends in $T_C$ with the spectral weight to effective Mn ratio, which suggest a strong double-exchange component to the FM mechanism, and highlights the important role of impurity states and localization at the Fermi level. Spectroscopic features of the IR conductivity are tracked as they evolve with temperature, doping, annealing, As-antisite compensation, and are found only to be consistent with an Mn-induced IB scenario. Furthermore, our detailed exploration of these spectral features demonstrates that seemingly conflicting trends reported in the literature regarding a broad mid-IR resonance with respect to carrier density in Ga$_{1-x}$Mn$_x$As are in fact not contradictory. Our study thus provides a consistent experimental picture of the magnetic and electronic properties of Ga$_{1-x}$Mn$_x$As.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Decoherence-protected quantum gates for a hybrid solid-state spin register

Protecting the dynamics of coupled quantum systems from decoherence by the environment is a key challenge for solid-state quantum information processing. An idle qubit can be efficiently insulated from the outside world via dynamical decoupling, as has recently been demonstrated for individual solid-state qubits. However, protection of qubit coherence during a multi-qubit gate poses a non-trivial problem: in general the decoupling disrupts the inter-qubit dynamics, and hence conflicts with gate operation. This problem is particularly salient for hybrid systems, wherein different types of qubits evolve and decohere at vastly different rates. Here we present the integration of dynamical decoupling into quantum gates for a paradigmatic hybrid system, the electron-nuclear spin register. Our design harnesses the internal resonance in the coupled-spin system to resolve the conflict between gate operation and decoupling. We experimentally demonstrate these gates on a two-qubit register in diamond operating at room temperature. Quantum tomography reveals that the qubits involved in the gate operation are protected as accurately as idle qubits. We further illustrate the power of our design by executing Grover's quantum search algorithm, achieving fidelities above 90% even though the execution time exceeds the electron spin dephasing time by two orders of magnitude. Our results directly enable decoherence-protected interface gates between different types of promising solid-state qubits. Ultimately, quantum gates with integrated decoupling may enable reaching the accuracy threshold for fault-tolerant quantum information processing with solid-state devices.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Electrical Tuning of Single Nitrogen-Vacancy Center Optical Transitions Enhanced by Photoinduced Fields

We demonstrate precise control over the zero-phonon optical transition energies of individual nitrogen-vacancy (NV) centers in diamond by applying multiaxis electric fields, via the dc Stark effect. The Stark shifts display surprising asymmetries that we attribute to an enhancement and rectification of the local electric field by photoionized charge traps in the diamond. Using this effect, we tune the excited-state orbitals of strained NV centers to degeneracy and vary the resulting degenerate optical transition frequency by >10 GHz, a scale comparable to the inhomogeneous frequency distribution. This technique will facilitate the integration of NV-center spins within photonic networks.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Feedback cooling of cantilever motion using a quantum point contact transducer

We use a quantum point contact (QPC) as a displacement transducer to measure and control the low-temperature thermal motion of a nearby micromechanical cantilever. The QPC is included in an active feedback loop designed to cool the cantilever's fundamental mechanical mode, achieving a squashing of the QPC noise at high gain. The minimum achieved effective mode temperature of 0.2 K and the displacement resolution of 10^(-11) m/Hz^(1/2) are limited by the performance of the QPC as a one-dimensional conductor and by the cantilever-QPC capacitive coupling.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Infrared conductivity of hole accumulation and depletion layers in (Ga,Mn)As- and (Ga,Be)As-based electric field-effect devices

We have fabricated electric double-layer field-effect devices to electrostatically dope our active materials, either $x$=0.015 Ga$_{1-x}$Mn$_x$As or $x$=3.2$\times10^{-4}$ Ga$_{1-x}$Be$_x$As. The devices are tailored for interrogation of electric field induced changes to the frequency dependent conductivity in the accumulation or depletions layers of the active material via infrared (IR) spectroscopy. The spectra of the (Ga,Be)As-based device reveal electric field induced changes to the IR conductivity consistent with an enhancement or reduction of the Drude response in the accumulation and depletion polarities, respectively. The spectroscopic features of this device are all indicative of metallic conduction within the GaAs host valence band (VB). For the (Ga,Mn)As-based device, the spectra show enhancement of the far-IR itinerant carrier response and broad mid-IR resonance upon hole accumulation, with a decrease of these features in the depletion polarity. These later spectral features demonstrate that conduction in ferromagnetic (FM) Ga$_{1-x}$Mn$_x$As is distinct from genuine metallic behavior due to extended states in the host VB. Furthermore, these data support the notion that a Mn-induced impurity band plays a vital role in the electron dynamics of FM Ga$_{1-x}$Mn$_x$As. We add, a sum-rule analysis of the spectra of our devices suggests that the Mn or Be doping does not lead to a substantial renormalization of the GaAs host VB.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Measurement and Control of Single Nitrogen-Vacancy Center Spins above 600 K

We study the spin and orbital dynamics of single nitrogen-vacancy (NV) centers in diamond between room temperature and 700 K. We find that the ability to optically address and coherently control single spins above room temperature is limited by nonradiative processes that quench the NV center's fluorescence-based spin readout between 550 and 700 K. Combined with electronic structure calculations, our measurements indicate that the energy difference between the 3E and 1A1 electronic states is approximately 0.8 eV. We also demonstrate that the inhomogeneous spin lifetime (T2*) is temperature independent up to at least 625 K, suggesting that single NV centers could be applied as nanoscale thermometers over a broad temperature range.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

An infrared probe of the insulator-to-metal transition in GaMnAs and GaBeAs

We report infrared studies of the insulator-to-metal transition (IMT) in GaAs doped with either magnetic (Mn) or non-magnetic acceptors (Be). We observe a resonance with a natural assignment to impurity states in the insulating regime of Ga$_{1-x}$Mn$_x$As, which persists across the IMT to the highest doping (16%). Beyond the IMT boundary, behavior combining insulating and metallic trends also persists to the highest Mn doping. Be doped samples however, display conventional metallicity just above the critical IMT concentration, with features indicative of transport within the host valence band.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Measurements of Nanoscale Domain Wall Flexing in a Ferromagnetic Thin Film

We use the high spatial sensitivity of the anomalous Hall effect in the ferromagnetic semiconductor Ga1-xMnxAs, combined with the magneto-optical Kerr effect, to probe the nanoscale elastic flexing behavior of a single magnetic domain wall in a ferromagnetic thin film. Our technique allows position sensitive characterization of the pinning site density, which we estimate to be around 10^14 cm^{-3}. Analysis of single site depinning events and their temperature dependence yields estimates of pinning site forces (10 pN range) as well as the thermal deactivation energy. Finally, our data hints at a much higher intrinsic domain wall mobility for flexing than previously observed in optically-probed micron scale measurements.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Phonon driven spin distribution due to the spin-Seebeck effect

Here we report on measurements of the spin-Seebeck effect of GaMnAs over an extended temperature range alongside the thermal conductivity, specific heat, magnetization, and thermoelectric power. The amplitude of the spin-Seebeck effect in GaMnAs scales with the thermal conductivity of the GaAs substrate and the phonon-drag contribution to the thermoelectric power of the GaMnAs, demonstrating that phonons drive the spin redistribution. A phenomenological model involving phonon-magnon drag explains the spatial and temperature dependence of the measured spin distribution.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Spin Coherence During Optical Excitation of a Single NV Center in Diamond

We examine the quantum spin state of a single nitrogen-vacancy (NV) center in diamond at room temperature as it makes a transition from the orbital ground-state (GS) to the orbital excited-state (ES) during non-resonant optical excitation. While the fluorescence read-out of NV-center spins relies on conservation of the longitudinal spin projection during optical excitation, the question of quantum phase preservation has not been examined. Using Ramsey measurements and quantum process tomography, we establish limits on NV center spin decoherence induced during optical excitation. Treating the optical excitation and ES spin precession as a quantum process, we measure a process fidelity of F=0.87\pm0.03, which includes ES spin dephasing during measurement. Extrapolation to the moment of optical excitation yields F\approx0.95. This result demonstrates that ES spin interactions may be used as a resource for quantum control because the quantum spin state can survive incoherent orbital transitions.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Coherent Heteroepitaxy of Bi2Se3 on GaAs (111)B

We report the heteroepitaxy of single crystal thin films of Bi2Se3 on the (111)B surface of GaAs by molecular beam epitaxy. We find that Bi2Se3 grows highly c-axis oriented, with an atomically sharp interface with the GaAs substrate. By optimizing the growth of a very thin GaAs buffer layer before growing the Bi2Se3, we demonstrate the growth of thin films with atomically flat terraces over hundreds of nanometers. Initial time-resolved Kerr rotation measurements herald opportunities for probing coherent spin dynamics at the interface between a candidate topological insulator and a large class of GaAs-based heterostructures.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Epitaxial EuO Thin Films on GaAs

We demonstrate the epitaxial growth of EuO on GaAs by reactive molecular beam epitaxy. Thin films are grown in an adsorption-controlled regime with the aid of an MgO diffusion barrier. Despite the large lattice mismatch, it is shown that EuO grows well on MgO(001) with excellent magnetic properties. Epitaxy on GaAs is cube-on-cube and longitudinal magneto-optic Kerr effect measurements demonstrate a large Kerr rotation of 0.57°, a significant remanent magnetization, and a Curie temperature of 69 K.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Mapping spin-orbit splitting in strained InGaAs epilayers

Time- and spatially-resolved Faraday rotation spectroscopy is used to measure the magnitude and direction of the momentum-dependent spin splitting in strained InGaAs epilayers. The epilayers are lattice-matched to the GaAs substrate and designed to reduce inhomogeneous effects related to strain relaxation. Measurements of momentum-dependent spin splitting as a function of electron spin drift velocity along [100], [010], [110] and [1$\overline{1}$0] directions enable separation of isotropic and anisotropic effective magnetic fields that arise from uniaxial and biaxial strain along $\langle$110$\rangle$. We relate our findings to previous measurements and theoretical predictions of spin splitting for inversion symmetry breaking in bulk strained semiconductors.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Observation of the Spin-Seebeck Effect in a Ferromagnetic Semiconductor

The spin-Seebeck effect was recently discovered in a metallic ferromagnet and consists of a thermally generated spin distribution that is electrically measured utilizing the inverse spin Hall effect. Here this effect is reproduced experimentally in a ferromagnetic semiconductor, GaMnAs, which allows for flexible design of the magnetization directions, a larger spin polarization, and measurements across the magnetic phase transition. The spin-Seebeck effect in GaMnAs is observed even in the absence of longitudinal charge transport. The spatial distribution of spin-currents is maintained across electrical breaks highlighting the local nature of the effect, which is therefore ascribed to a thermally induced spin redistribution.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Oscillatory Spin Polarization and Magneto-Optic Kerr Effect in Fe3O4 Thin Films on GaAs(001)

The spin dependent properties of epitaxial Fe3O4 thin films on GaAs(001) are studied by the ferromagnetic proximity polarization (FPP) effect and magneto-optic Kerr effect (MOKE). Both FPP and MOKE show oscillations with respect to Fe3O4 film thickness, and the oscillations are large enough to induce repeated sign reversals. We attribute the oscillatory behavior to spin-polarized quantum well states forming in the Fe3O4 film. Quantum confinement of the t2g states near the Fermi level provides an explanation for the similar thickness dependences of the FPP and MOKE oscillations.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Quantum computing with defects

Identifying and designing physical systems for use as qubits, the basic units of quantum information, are critical steps in the development of a quantum computer. Among the possibilities in the solid state, a defect in diamond known as the nitrogen-vacancy (NV-1) center stands out for its robustness - its quantum state can be initialized, manipulated, and measured with high fidelity at room temperature. Here we describe how to systematically identify other deep center defects with similar quantum-mechanical properties. We present a list of physical criteria that these centers and their hosts should meet and explain how these requirements can be used in conjunction with electronic structure theory to intelligently sort through candidate defect systems. To illustrate these points in detail, we compare electronic structure calculations of the NV-1 center in diamond with those of several deep centers in 4H silicon carbide (SiC). We then discuss the proposed criteria for similar defects in other tetrahedrally-coordinated semiconductors.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Spin Control of Drifting Electrons using Local Nuclear Polarization in Ferromagnet/Semiconductor Heterostructures

We demonstrate methods to locally control the spin rotation of moving electrons in a GaAs channel. The Larmor frequency of optically-injected spins is modulated when the spins are dragged through a region of spin-polarized nuclei created at a MnAs/GaAs interface. The effective field created by the nuclei is controlled either optically or electrically using the ferromagnetic proximity polarization effect. Spin rotation is also tuned by controlling the carrier traverse time through the polarized region. We demonstrate coherent spin rotations exceeding 4 pi radians during transport.

0 citations0 reviewsNo code linkedOpen access
preprint2009arXiv

Current-Induced Spin Polarization in Gallium Nitride

Electrically generated spin polarization is probed directly in bulk GaN using Kerr rotation spectroscopy. A series of n-type GaN epilayers are grown in the wurtzite phase both by molecular beam epitaxy (MBE) and metalorganic chemical vapor deposition (MOCVD) with a variety of doping densities chosen to broadly modulate the transverse spin lifetime, T2*. The spin polarization is characterized as a function of electrical excitation energy over a range of temperatures. Despite weak spin-orbit interactions in GaN, a current-induced spin polarization (CISP) is observed in the material at temperatures of up to 200 K.

0 citations0 reviewsNo code linkedOpen access
preprint2009arXiv

Decay of Rabi oscillations by dipolar-coupled dynamical spin environments

We investigate the Rabi oscillations decay of a spin decohered by a spin bath whose internal dynamics is caused by dipolar coupling between the bath spins. The decay form and rate as a function of the intra-bath coupling is studied analytically, and confirmed numerically. The decay in general has neither exponential/Gaussian or power-law form, and changes non-monotonically with the intra-bath coupling, decelerating for both slow and fast baths. The form and rate of Rabi oscillations decay can be used to experimentally determine the intra-bath coupling strength for a broad class of solid-state systems.

0 citations0 reviewsNo code linkedOpen access
preprint2009arXiv

Generation and transport of photoexcited electrons in single-crystal diamond

We report time-dependent photocurrent and transport measurements of sub-bandgap photoexcited carriers in nitrogen-rich (type Ib), single-crystal diamond. Transient carrier dynamics are characteristic of trapping conduction with long charge storage lifetimes of ~3 hours. By measuring the photoexcited Hall effect we confirm that the charge carriers are electrons and by varying the excitation energy we observe a strong turn-on in the photoconduction at ~1.9 eV. These findings shed new light on sub-bandgap states in nitrogen doped single-crystal diamond.

0 citations0 reviewsNo code linkedOpen access
preprint2009arXiv

Interlayer and interfacial exchange coupling in ferromagnetic metal/semiconductor heterostructures

We describe a systematic study of the exchange coupling between a magnetically hard metallic ferromagnet (MnAs) and a magnetically soft ferromagnetic semiconductor (GaMnAs) in bilayer and trilayer heterostructures. An exchange spring model of MnAs/GaMnAs bilayers accounts for the variation of the exchange bias field with layer thickness and composition. We also present evidence for hole-mediated interlayer exchange coupling in MnAs/p-GaAs/\GaMnAs trilayers and study the dependence of the exchange bias field on the thickness of the spacer layer.

0 citations0 reviewsNo code linkedOpen access
preprint2009arXiv

Vector magnetic field microscopy using nitrogen vacancy centers in diamond

The localized spin triplet ground state of a nitrogen vacancy (NV) center in diamond can be used in atomic-scale detection of local magnetic fields. Here we present a technique using these defects in diamond to image fields around magnetic structures. We extract the local magnetic field vector by probing resonant transitions of the four fixed tetrahedral NV orientations. In combination with confocal microscopy techniques, we construct a 2-dimensional image of the local magnetic field vectors. Measurements are done in external fields less than 50 G and under ambient conditions.

0 citations0 reviewsNo code linkedOpen access
preprint2006arXiv

Room temperature electron spin coherence in telecom-wavelength quaternary quantum wells

Time-resolved Kerr rotation spectroscopy is used to monitor the room temperature electron spin dynamics of optical telecommunication wavelength AlInGaAs multiple quantum wells lattice-matched to InP. We found that electron spin coherence times and effective g-factors vary as a function of aluminum concentration. The measured electron spin coherence times of these multiple quantum wells, with wavelengths ranging from 1.26 microns to 1.53 microns, reach approximately 100 ps at room temperature, and the measured electron effective g-factors are in the range from -2.3 to -1.1.

0 citations0 reviewsNo code linkedOpen access
preprint2005arXiv

Anisotropic interactions of a single spin and dark-spin spectroscopy in diamond

The nitrogen-vacancy (N-V) center in diamond is a promising atomic-scale system for solid-state quantum information processing. Its spin-dependent photoluminescence has enabled sensitive measurements on single N-V centers, such as: electron spin resonance, Rabi oscillations, single-shot spin readout and two-qubit operations with a nearby 13C nuclear spin. Furthermore, room temperature spin coherence times as long as 58 microseconds have been reported for N-V center ensembles. Here, we have developed an angle-resolved magneto-photoluminescence microscopy apparatus to investigate the anisotropic electron spin interactions of single N-V centers at room temperature. We observe negative peaks in the photoluminescence as a function of both magnetic field magnitude and angle that are explained by coherent spin precession and anisotropic relaxation at spin level anti-crossings. In addition, precise field alignment unmasks the resonant coupling to neighboring dark nitrogen spins that are not otherwise detected by photoluminescence. The latter results demonstrate a means of investigating small numbers of dark spins via a single bright spin under ambient conditions.

0 citations0 reviewsNo code linkedOpen access
preprint2005arXiv

Antiferromagnetic s-d exchange coupling in GaMnAs

Measurements of coherent electron spin dynamics in Ga(1-x)Mn(x)As/Al(0.4)Ga(0.6)As quantum wells with 0.0006% < x < 0.03% show an antiferromagnetic (negative) exchange bewteen s-like conduction band electrons and electrons localized in the d-shell of the Mn2+ impurities. The magnitude of the s-d exchange parameter, N0 alpha, varies as a function of well width indicative of a large and negative contribution due to kinetic exchange. In the limit of no quantum confinement, N0 alpha extrapolates to -0.09 +/- 0.03 eV indicating that antiferromagnetic s-d exchange is a bulk property of GaMnAs. Measurements of the polarization-resolved photoluminescence show strong discrepancy from a simple model of the exchange enhanced Zeeman splitting, indicative of additional complexity in the exchange split valence band.

0 citations0 reviewsNo code linkedOpen access
preprint2005arXiv

Spatial imaging of the spin Hall effect and current-induced polarization in two-dimensional electron gases

Spin-orbit coupling in semiconductors relates the spin of an electron to its momentum and provides a pathway for electrically initializing and manipulating electron spins for applications in spintronics and spin-based quantum information processing. This coupling can be regulated with quantum confinement in semiconductor heterostructures through band structure engineering. Here we investigate the spin Hall effect and current-induced spin polarization in a two-dimensional electron gas confined in (110) AlGaAs quantum wells using Kerr rotation microscopy. In contrast to previous measurements, the spin Hall profile exhibits complex structure, and the current-induced spin polarization is out-of-plane. The experiments map the strong dependence of the current-induced spin polarization to the crystal axis along which the electric field is applied, reflecting the anisotropy of the spin-orbit interaction. These results reveal opportunities for tuning a spin source using quantum confinement and device engineering in non-magnetic materials.

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preprint2003arXiv

Discrete Fourier Transform in Nanostructures using Scattering

In this paper we show that the discrete Fourier transform can be performed by scattering a coherent particle or laser beam off a two-dimensional potential that has the shape of rings or peaks. After encoding the initial vector into the two-dimensional potential, the Fourier-transformed vector can be read out by detectors surrounding the potential. The wavelength of the laser beam determines the necessary accuracy of the 2D potential, which makes our method very fault-tolerant.

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