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R. C. Myers

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Published work

17 published item(s)

preprint2015arXiv

Optical control of internal electric fields in band-gap graded InGaN nanowires

InGaN nanowires are suitable building blocks for many future optoelectronic devices. We show that a linear grading of the indium content along the nanowire axis from GaN to InN introduces an internal electric field evoking a photocurrent. Consistent with quantitative band structure simulations we observe a sign change in the measured photocurrent as a function of photon flux. This negative differential photocurrent opens the path to a new type of nanowire-based photodetector. We demonstrate that the photocurrent response of the nanowires is as fast as 1.5 ps.

preprint2013arXiv

Ferromagnetism and infrared electrodynamics of Ga$_{1-x}$Mn$_{x}$As}

We report on the magnetic and the electronic properties of the prototype dilute magnetic semiconductor Ga$_{1-x}$Mn$_x$As using infrared (IR) spectroscopy. Trends in the ferromagnetic transition temperature $T_C$ with respect to the IR spectral weight are examined using a sum-rule analysis of IR conductivity spectra. We find non-monotonic behavior of trends in $T_C$ with the spectral weight to effective Mn ratio, which suggest a strong double-exchange component to the FM mechanism, and highlights the important role of impurity states and localization at the Fermi level. Spectroscopic features of the IR conductivity are tracked as they evolve with temperature, doping, annealing, As-antisite compensation, and are found only to be consistent with an Mn-induced IB scenario. Furthermore, our detailed exploration of these spectral features demonstrates that seemingly conflicting trends reported in the literature regarding a broad mid-IR resonance with respect to carrier density in Ga$_{1-x}$Mn$_x$As are in fact not contradictory. Our study thus provides a consistent experimental picture of the magnetic and electronic properties of Ga$_{1-x}$Mn$_x$As.

preprint2012arXiv

Coaxial Nanowire Resonant Tunneling Diodes from non-polar AlN/GaN on Silicon

Resonant tunneling diodes are formed using AlN/GaN core-shell nanowire heterostructures grown by plasma assisted molecular beam epitaxy on n-Si(111) substrates. By using a coaxial geometry these devices take advantage of non-polar (m-plane) nanowire sidewalls. Device modeling predicts non-polar orientation should enhance resonant tunneling compared to a polar structure and that AlN double barriers will lead to higher peak-to-valley current ratios compared to AlGaN barriers. Electrical measurements of ensembles of nanowires show negative differential resistance appearing only at cryogenic temperature. Individual nanowire measurements show negative differential resistance at room temperature with peak current density of 5*10^5 A/cm^2.

preprint2012arXiv

Epitaxial Ferromagnetic Nanoislands of Cubic GdN in Hexagonal GaN

Periodic structures of GdN particles encapsulated in a single crystalline GaN matrix were prepared by plasma assisted molecular beam epitaxy. High resolution X-ray diffractometery shows that GdN islands, with rock salt structure are epitaxially oriented to the wurtzite GaN matrix. Scanning transmission electron microscopy combined with in-situ reflection high energy electron diffraction allows for the study of island formation dynamics, which occurs after 1.2 monolayers of GdN coverage. Magnetometry reveals two ferromagnetic phases, one due to GdN particles with Curie temperature of 70K and a second, anomalous room temperature phase.

preprint2011arXiv

An infrared probe of the insulator-to-metal transition in GaMnAs and GaBeAs

We report infrared studies of the insulator-to-metal transition (IMT) in GaAs doped with either magnetic (Mn) or non-magnetic acceptors (Be). We observe a resonance with a natural assignment to impurity states in the insulating regime of Ga$_{1-x}$Mn$_x$As, which persists across the IMT to the highest doping (16%). Beyond the IMT boundary, behavior combining insulating and metallic trends also persists to the highest Mn doping. Be doped samples however, display conventional metallicity just above the critical IMT concentration, with features indicative of transport within the host valence band.

preprint2011arXiv

Phonon driven spin distribution due to the spin-Seebeck effect

Here we report on measurements of the spin-Seebeck effect of GaMnAs over an extended temperature range alongside the thermal conductivity, specific heat, magnetization, and thermoelectric power. The amplitude of the spin-Seebeck effect in GaMnAs scales with the thermal conductivity of the GaAs substrate and the phonon-drag contribution to the thermoelectric power of the GaMnAs, demonstrating that phonons drive the spin redistribution. A phenomenological model involving phonon-magnon drag explains the spatial and temperature dependence of the measured spin distribution.

preprint2010arXiv

Observation of the Spin-Seebeck Effect in a Ferromagnetic Semiconductor

The spin-Seebeck effect was recently discovered in a metallic ferromagnet and consists of a thermally generated spin distribution that is electrically measured utilizing the inverse spin Hall effect. Here this effect is reproduced experimentally in a ferromagnetic semiconductor, GaMnAs, which allows for flexible design of the magnetization directions, a larger spin polarization, and measurements across the magnetic phase transition. The spin-Seebeck effect in GaMnAs is observed even in the absence of longitudinal charge transport. The spatial distribution of spin-currents is maintained across electrical breaks highlighting the local nature of the effect, which is therefore ascribed to a thermally induced spin redistribution.

preprint2009arXiv

Interlayer and interfacial exchange coupling in ferromagnetic metal/semiconductor heterostructures

We describe a systematic study of the exchange coupling between a magnetically hard metallic ferromagnet (MnAs) and a magnetically soft ferromagnetic semiconductor (GaMnAs) in bilayer and trilayer heterostructures. An exchange spring model of MnAs/GaMnAs bilayers accounts for the variation of the exchange bias field with layer thickness and composition. We also present evidence for hole-mediated interlayer exchange coupling in MnAs/p-GaAs/\GaMnAs trilayers and study the dependence of the exchange bias field on the thickness of the spacer layer.

preprint2006arXiv

Room temperature electron spin coherence in telecom-wavelength quaternary quantum wells

Time-resolved Kerr rotation spectroscopy is used to monitor the room temperature electron spin dynamics of optical telecommunication wavelength AlInGaAs multiple quantum wells lattice-matched to InP. We found that electron spin coherence times and effective g-factors vary as a function of aluminum concentration. The measured electron spin coherence times of these multiple quantum wells, with wavelengths ranging from 1.26 microns to 1.53 microns, reach approximately 100 ps at room temperature, and the measured electron effective g-factors are in the range from -2.3 to -1.1.

preprint2005arXiv

Antiferromagnetic s-d exchange coupling in GaMnAs

Measurements of coherent electron spin dynamics in Ga(1-x)Mn(x)As/Al(0.4)Ga(0.6)As quantum wells with 0.0006% < x < 0.03% show an antiferromagnetic (negative) exchange bewteen s-like conduction band electrons and electrons localized in the d-shell of the Mn2+ impurities. The magnitude of the s-d exchange parameter, N0 alpha, varies as a function of well width indicative of a large and negative contribution due to kinetic exchange. In the limit of no quantum confinement, N0 alpha extrapolates to -0.09 +/- 0.03 eV indicating that antiferromagnetic s-d exchange is a bulk property of GaMnAs. Measurements of the polarization-resolved photoluminescence show strong discrepancy from a simple model of the exchange enhanced Zeeman splitting, indicative of additional complexity in the exchange split valence band.

preprint2005arXiv

Spatial imaging of the spin Hall effect and current-induced polarization in two-dimensional electron gases

Spin-orbit coupling in semiconductors relates the spin of an electron to its momentum and provides a pathway for electrically initializing and manipulating electron spins for applications in spintronics and spin-based quantum information processing. This coupling can be regulated with quantum confinement in semiconductor heterostructures through band structure engineering. Here we investigate the spin Hall effect and current-induced spin polarization in a two-dimensional electron gas confined in (110) AlGaAs quantum wells using Kerr rotation microscopy. In contrast to previous measurements, the spin Hall profile exhibits complex structure, and the current-induced spin polarization is out-of-plane. The experiments map the strong dependence of the current-induced spin polarization to the crystal axis along which the electric field is applied, reflecting the anisotropy of the spin-orbit interaction. These results reveal opportunities for tuning a spin source using quantum confinement and device engineering in non-magnetic materials.

preprint1999arXiv

The Free Energy of N=4 Super-Yang-Mills and the AdS/CFT Correspondence

We compute the high-temperature limit of the free energy for four-dimensional N=4 supersymmetric SU(N_c) Yang-Mills theory. At weak coupling we do so for a general ultrastatic background spacetime, and in the presence of slowly-varying background gauge fields. Using Maldacena's conjectured duality, we calculate the strong-coupling large-N_c expression for the special case that the three-space has constant curvature. We compare the two results paying particular attention to curvature corrections to the leading order expressions.

preprint1998arXiv

Black Holes of D=5 Supergravity

We discuss some general features of black holes of five-dimensional supergravity, such as the first law of black hole mechanics. We also discuss some special features of rotating supersymmetric black holes. In particular, we show that the horizon is a non-singular, and {\sl non-rotating}, null hypersurface whose intersection with a Cauchy surface is a squashed 3-sphere. We find the Killing spinors of the near-horizon geometry and thereby determine the near-horizon isometry supergroup.

preprint1997arXiv

Hermitian D-brane solutions

A low-energy background field solution describing D-membrane configurations is constructed which is distinguished by the appearance of a Hermitian metric on the internal space. This metric is composed of a number of independent harmonic functions on the transverse space. Thus this construction generalizes the usual harmonic superposition rule. The BPS bound of these solutions is shown to be saturated indicating that they are supersymmetric. By means of T-duality, we construct more solutions of the IIA and IIB theories.

preprint1995arXiv

Black Hole Entropy without Brick Walls

We present evidence which confirms a suggestion by Susskind and Uglum regarding black hole entropy. Using a Pauli-Villars regulator, we find that 't Hooft's approach to evaluating black hole entropy through a statistical-mechanical counting of states for a scalar field propagating outside the event horizon yields precisely the one-loop renormalization of the standard Bekenstein-Hawking formula, $S=\A/(4G)$. Our calculation also yields a constant contribution to the black hole entropy, a contribution associated with the one-loop renormalization of higher curvature terms in the gravitational action.

preprint1994arXiv

On Spherically Symmetric String Solutions in Four Dimensions

We reconsider here the problem of finding the general 4D spherically symmetric, asymptotically flat and time-independent solutions to the lowest-order string equations in the $\ap$ expansion. Our construction includes earlier work, but differs from it in three ways. (1) We work with general background metric, dilaton, axion and $U(1)$ gauge fields. (2) Much of the original solutions were required to be nonsingular at the apparent horizon, motivated by an interest in finding string corrections to black hole spacetimes. We relax this condition throughout, motivated by the realization that string theory has a less restrictive notion of what constitutes a singular field configuration than do point particle theories. (3) We can construct the general solution from a particularly simple one, by generating it from successive applications of the {\it noncommuting} \sltwor\ and \ooneone\ symmetries of the low-energy string equations containing $S$ and target--space dualities respectively. This allows its construction using relatively simple, purely algebraic, techniques. The general solution is determined by the asymptotic behaviour of the various fields: \ie\ by the mass, dilaton charge, axion charge, electric charge, magnetic charge, and Taub-NUT parameter.