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Researcher profile

N. Samarth

N. Samarth contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mtrl-scicond-mat.mes-hall

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Published work

7 published item(s)

preprint2013arXiv

Tunneling Tuned Spin Modulations in Ultrathin Topological Insulator Films

Quantitative understanding of the relationship between quantum tunneling and Fermi surface spin polarization is key to device design using topological insulator surface states. By using spin-resolved photoemission spectroscopy with p-polarized light in topological insulator Bi2Se3 thin films across the metal-to-insulator transition, we observe that for a given film thickness, the spin polarization is large for momenta far from the center of the surface Brillouin zone. In addition, the polarization decreases significantly with enhanced tunneling realized systematically in thin insulating films, whereas magnitude of the polarization saturates to the bulk limit faster at larger wavevectors in thicker metallic films. Our theoretical model calculations capture this delicate relationship between quantum tunneling and Fermi surface spin polarization. Our results suggest that the polarization current can be tuned to zero in thin insulating films forming the basis for a future spin-switch nano-device.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

An infrared probe of the insulator-to-metal transition in GaMnAs and GaBeAs

We report infrared studies of the insulator-to-metal transition (IMT) in GaAs doped with either magnetic (Mn) or non-magnetic acceptors (Be). We observe a resonance with a natural assignment to impurity states in the insulating regime of Ga$_{1-x}$Mn$_x$As, which persists across the IMT to the highest doping (16%). Beyond the IMT boundary, behavior combining insulating and metallic trends also persists to the highest Mn doping. Be doped samples however, display conventional metallicity just above the critical IMT concentration, with features indicative of transport within the host valence band.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Measurements of Nanoscale Domain Wall Flexing in a Ferromagnetic Thin Film

We use the high spatial sensitivity of the anomalous Hall effect in the ferromagnetic semiconductor Ga1-xMnxAs, combined with the magneto-optical Kerr effect, to probe the nanoscale elastic flexing behavior of a single magnetic domain wall in a ferromagnetic thin film. Our technique allows position sensitive characterization of the pinning site density, which we estimate to be around 10^14 cm^{-3}. Analysis of single site depinning events and their temperature dependence yields estimates of pinning site forces (10 pN range) as well as the thermal deactivation energy. Finally, our data hints at a much higher intrinsic domain wall mobility for flexing than previously observed in optically-probed micron scale measurements.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Coherent Heteroepitaxy of Bi2Se3 on GaAs (111)B

We report the heteroepitaxy of single crystal thin films of Bi2Se3 on the (111)B surface of GaAs by molecular beam epitaxy. We find that Bi2Se3 grows highly c-axis oriented, with an atomically sharp interface with the GaAs substrate. By optimizing the growth of a very thin GaAs buffer layer before growing the Bi2Se3, we demonstrate the growth of thin films with atomically flat terraces over hundreds of nanometers. Initial time-resolved Kerr rotation measurements herald opportunities for probing coherent spin dynamics at the interface between a candidate topological insulator and a large class of GaAs-based heterostructures.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Localization and the Anomalous Hall Effect in a "Dirty" Metallic Ferromagnet

We report magnetoresistance measurements over an extensive temperature range (0.1 K $\leq T \leq$ 100 K) in a disordered ferromagnetic semiconductor (\gma). The study focuses on a series of metallic \gma~ epilayers that lie in the vicinity of the metal-insulator transition ($k_F l_e\sim 1$). At low temperatures ($T < 4$ K), we first confirm the results of earlier studies that the longitudinal conductivity shows a $T^{1/3}$ dependence, consistent with quantum corrections from carrier localization in a ``dirty&#39;&#39; metal. In addition, we find that the anomalous Hall conductivity exhibits universal behavior in this temperature range, with no pronounced quantum corrections. We argue that observed scaling relationship between the low temperature longitudinal and transverse resistivity, taken in conjunction with the absence of quantum corrections to the anomalous Hall conductivity, is consistent with the side-jump mechanism for the anomalous Hall effect. In contrast, at high temperatures ($T \gtrsim 4$ K), neither the longitudinal nor the anomalous Hall conductivity exhibit universal behavior, indicating the dominance of inelastic scattering contributions down to liquid helium temperatures.

0 citations0 reviewsNo code linkedOpen access
preprint2007arXiv

Random telegraph noise from magnetic nanoclusters in the ferromagnetic semiconductor (Ga,Mn)As

Measurements of the low frequency electrical noise in the ferromagnetic semiconductor (Ga,Mn)As reveal an enhanced integrated noise at low temperature. For moderate localization, we find a 1/f normalized power spectrum density over the entire range of temperatures studied (4.2K < T < 70K). However, for stronger localization and a high density of Mn interstitials, we observe Lorentzian noise spectra accompanied by random telegraph noise. Magnetic field dependence and annealing studies suggest that interstitial Mn defects couple with substitutional Mn atoms to form nanoscale magnetic clusters characterized by a net moment of about 20 Bohr magnetons whose fluctuations modulate hole transport.

0 citations0 reviewsNo code linkedOpen access
preprint2007arXiv

Spin Valve Effect in Self-exchange Biased Ferromagnetic Metal/Semiconductor Bilayers

We report magnetization and magetoresistance measurements in hybrid ferromagnetic metal/semiconductor heterostructures comprised of MnAs/(Ga,Mn)As bilayers. Our measurements show that the (metallic) MnAs and (semiconducting) (Ga,Mn)As layers are exchange coupled, re- sulting in an exchange biasing of the magnetically softer (Ga,Mn)As layer that weakens with layer thickness. Magnetoresistance measurements in the current-perpendicular-to-the-plane geometry show a spin valve effect in these self-exchange biased bilayers. Similar measurements in MnAs/p- GaAs/(Ga,Mn)As trilayers show that the exchange coupling diminishes with spatial separation between the layers.

0 citations0 reviewsNo code linkedOpen access