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Craig Tindall

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physics.ins-det astro-ph.IM

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preprint2016arXiv

Performance of the LBNL FastCCD for the European XFEL

The European X-ray Free Electron Laser (XFEL.EU) is currently being commissioned in Schenefeld, Germany. From 2017 onwards it will provide spatially coherent X-rays of energies between 0.25\,keV and 25\,keV with a unique timing structure. One of the detectors foreseen at XFEL.EU for the soft X-ray regime (energies below 6\,keV) is a quasi column-parallel readout FastCCD developed by Lawrence Berkeley National Lab (LBNL) specifically for the XFEL.EU requirements. Its sensor has 1920$\times$960 pixels of 30\,$μ$m $\times$30\,$μ$m size with a beam hole in the middle of the sensor. The camera can be operated in full frame and frame store mode. With the FastCCD a frame rate of up to 120~fps can be achieved, but at XFEL.EU the camera settings are optimized for the 10\,Hz XFEL bunch-mode. The detector has been delivered to XFEL.EU. Results of the performance tests and calibration done using the XFEL.EU detector calibration infrastructure are presented quantifying noise level, gain and energy resolution.

preprint2016arXiv

X-ray Performance of Back-Side Illuminated Type of Kyoto's X-ray Astronomical SOI Pixel Sensor, XRPIX

We have been developing X-ray SOI pixel Sensors, called "XRPIX", for future X-ray astronomy satellites that enable us to observe in the wide energy band of 0.5-40 keV. Since XRPIXs have the circuitry layer with a thickness of about 8 μm in the front side of the sensor, it is impossible to detect low energy X-rays with a front-illuminated type. So, we have been developing back-illuminated type of XRPIX with a less 1 μm dead layer in the back-side, which enables the sensitivity to reach 0.5 keV. We produced two types of back-side illuminated (BI) XRPIXs, one of which is produced in "Pizza process" which LBNL developed and the other is processed in the ion implantation and laser annealing. We irradiated both of the BI-XRPIXs with soft X-ray and investigate soft X-ray performance of them. We report results from soft X-ray evaluation test of the device.

preprint2011arXiv

Characterisation of a Thin Fully-Depleted SOI Pixel Sensor with Soft X-ray Radiation

This paper presents the results of the characterisation of a back-illuminated pixel sensor manufactured in Silicon-On-Insulator technology on a high-resistivity substrate with soft X-rays. The sensor is thinned and a thin Phosphor layer contact is implanted on the back-plane. The response to X-rays from 2.12 up to 8.6 keV is evaluated with fluorescence radiation at the LBNL Advanced Light Source.