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Researcher profile

Peter Denes

Peter Denes contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
physics.ins-detBiological Physicsphysics.app-phphysics.soc-ph

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Published work

5 published item(s)

preprint2022arXiv

Big Industry Engagement to Benefit HEP: Microelectronics Support from Large CAD Companies

Microelectronics development is critical to a wide number of DOE projects and mission space. Creating Helpful Incentives to Produce Semiconductors (CHIPS) and manufacturing Application Specific Integrated Circuits (ASIC) are important to DOE, so the infrastructure that allows DOE to carry out its mission needs to exist. This paper discusses the current initiatives and recommends a business model to build an ecosystem for microelectronics design for DOE which includes three main building blocks: the Computer Aided Design (CAD) - Electronic Design Automation (EDA) design tools, basic design IPs, and access to semiconductor fabrication facilities.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Small footprint optoelectrodes for simultaneous readout and passive light localization by the use of ring resonators

Neural probes are in vivo invasive devices that combine electrophysiology and optogenetics to gain insight into how the brain operates, down to the single neuron and its network activity. Their integration of stimulation sites and sensors allows for recording and manipulating neurons` activity with a high spatiotemporal resolution. State of the art probes are limited by tradeoffs between their lateral dimension, the number of sensors, and the ability to selectively access independent stimulation sites. Here, we realize a highly scalable probe that features a three-dimensional integration of small footprint arrays of sensors and nanophotonic circuits and scales the density of sensors per cross-section by one order of magnitude with respect to state of the art devices. For the first time, we overcome the spatial limit of the nanophotonic circuit by coupling only one waveguide to numerous optical ring resonators as passive nanophotonic switches. With our strategy, we achieve accurate on-demand light localization while avoiding spatial demanding bundles of waveguides and demonstrate the feasibility of a proof of concept device and its additional scalability, towards high resolution and low damaging neural optoelectrodes.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Characterisation of a Thin Fully Depleted SOI Pixel Sensor with High Momentum Charged Particles

This paper presents the results of the characterisation of a thin, fully depleted pixel sensor manufactured in SOI technology on high-resistivity substrate with high momentum charged particles. The sensor is thinned to 70 $μ$m and a thin phosphor layer contact is implanted on the back-plane. Its response is compared to that of thick sensors of same design in terms of signal and noise, detection efficiency and single point resolution based on data collected with 300 GeV pions at the CERN SPS. We observe that the charge collected and the signal-to-noise ratio scale according to the estimated thickness of the sensitive volume and the efficiency and single point resolution of the thinned chip are comparable to those measured for the thick sensors.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Characterisation of a Pixel Sensor in 0.20 micron SOI Technology for Charged Particle Tracking

This paper presents the results of the characterisation of a pixel sensor manufactured in OKI 0.2 micron SOI technology integrated on a high-resistivity substrate, and featuring several pixel cell layouts for charge collection optimisation. The sensor is tested with short IR laser pulses, X-rays and 200 GeV pions. We report results on charge collection, particle detection efficiency and single point resolution.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Characterisation of a CMOS Active Pixel Sensor for use in the TEAM Microscope

A 1M- and a 4M-pixel monolithic CMOS active pixel sensor with 9.5x9.5 micron^2 pixels have been developed for direct imaging in transmission electron microscopy as part of the TEAM project. We present the design and a full characterisation of the detector. Data collected with electron beams at various energies of interest in electron microscopy are used to determine the detector response. Data are compared to predictions of simulation. The line spread function measured with 80 keV and 300 keV electrons is (12.1+/-0.7) micron and (7.4+/-0.6) micron, respectively, in good agreement with our simulation. We measure the detection quantum efficiency to be 0.78+/-0.04 at 80 keV and 0.74+/-0.03 at 300 keV. Using a new imaging technique, based on single electron reconstruction, the line spread function for 80 keV and 300 keV electrons becomes (6.7+/-0.3) micron and (2.4+/-0.2) micron, respectively. The radiation tolerance of the pixels has been tested up to 5 Mrad and the detector is still functional with a decrease of dynamic range by ~30%, corresponding to a reduction in full-well depth from ~39 to ~27 primary 300 keV electrons, due to leakage current increase, but identical line spread function performance.

0 citations0 reviewsNo code linkedOpen access