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Conrad D. James

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2 published item(s)

preprint2020arXiv

Constant-Depth and Subcubic-Size Threshold Circuits for Matrix Multiplication

Boolean circuits of McCulloch-Pitts threshold gates are a classic model of neural computation studied heavily in the late 20th century as a model of general computation. Recent advances in large-scale neural computing hardware has made their practical implementation a near-term possibility. We describe a theoretical approach for multiplying two $N$ by $N$ matrices that integrates threshold gate logic with conventional fast matrix multiplication algorithms, that perform $O(N^ω)$ arithmetic operations for a positive constant $ω< 3$. Our approach converts such a fast matrix multiplication algorithm into a constant-depth threshold circuit with approximately $O(N^ω)$ gates. Prior to our work, it was not known whether the $Θ(N^3)$-gate barrier for matrix multiplication was surmountable by constant-depth threshold circuits. Dense matrix multiplication is a core operation in convolutional neural network training. Performing this work on a neural architecture instead of off-loading it to a GPU may be an appealing option.

preprint2014arXiv

Degenerate Resistive Switching and Ultrahigh Density Storage in Resistive Memory

We show that, in tantalum oxide resistive memories, activation power provides a multi-level variable for information storage that can be set and read separately from the resistance. These two state variables (resistance and activation power) can be precisely controlled in two steps: (1) the possible activation power states are selected by partially reducing resistance, then (2) a subsequent partial increase in resistance specifies the resistance state and the final activation power state. We show that these states can be precisely written and read electrically, making this approach potentially amenable for ultra-high density memories. We provide a theoretical explanation for information storage and retrieval from activation power and experimentally demonstrate information storage in a third dimension related to the change in activation power with resistance.