Stabilization of competing ferroelectric phases of HfO under epitaxial strain
Hafnia (HfO)-based thin films have promising applications in nanoscale electronic devices due to their robust ferroelectricity and integration with silicon. However, HfO has various stable and metastable polymorphs with quite similar structures and energies. Identifying and stabilizing the ferroelectric functional phases of HfO have attracted intensive research interest in recent years. In this work, first-principles calculations on (111)-oriented HfO are used to discover that imposing an in-plane shear strain on the tetragonal phase induces a nonpolar to polar phase transition. This in-plane shear-induced polar phase is shown to be an epitaxial distortion of a known metastable ferroelectric phase of HfO. It is proposed that this ferroelectric phase can account for the recently observed ferroelectricity in the (111)-oriented HfO-based thin film [Nature Materials 17, 1095-1100 (2018)]. Further investigation of this second functional ferroelectric phase in HfO could potentially improve the performances of HfO-based films in logic and memory devices.