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Source author record

Charles H. Ahn

Charles H. Ahn appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mtrl-scicond-mat.str-elcond-mat.mes-hallcond-mat.dis-nncond-mat.supr-conphysics.optics

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Published work

11 published item(s)

preprint2022arXiv

Heteroepitaxial control of Fermi liquid, Hund metal, and Mott insulator phases in the single-atomic-layer limit

Interfaces between dissimilar correlated oxides can offer devices with versatile functionalities. In that respect, manipulating and measuring novel physical properties of oxide heterointerfaces are highly desired. Yet, despite extensive studies, obtaining direct information on their momentum-resolved electronic structure remains a great challenge. This is because most correlated interfacial phenomena appear within a few atomic layers from the interface, thus limiting the application of available experimental probes. Here, we utilize atomic-scale epitaxy and photoemission spectroscopy to demonstrate the interface control of correlated electronic phases in atomic-scale ruthenate--titanate heterostructures. While bulk SrRuO$_3$ is a ferromagnetic metal, the heterointerfaces exclusively realize three distinct correlated phases in the single-atomic-layer limit. Our theory reveals that atomic-scale structural proximity effects lead to the emergence of Fermi liquid, Hund metal, and Mott insulator phases in the quantum-confined SrRuO$_3$. These results highlight the extensive interfacial tunability of electronic phases, hitherto hidden in the atomically thin correlated heterostructure.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Stabilization of competing ferroelectric phases of HfO$_2$ under epitaxial strain

Hafnia (HfO$_2$)-based thin films have promising applications in nanoscale electronic devices due to their robust ferroelectricity and integration with silicon. However, HfO$_2$ has various stable and metastable polymorphs with quite similar structures and energies. Identifying and stabilizing the ferroelectric functional phases of HfO$_2$ have attracted intensive research interest in recent years. In this work, first-principles calculations on (111)-oriented HfO$_2$ are used to discover that imposing an in-plane shear strain on the tetragonal phase induces a nonpolar to polar phase transition. This in-plane shear-induced polar phase is shown to be an epitaxial distortion of a known metastable ferroelectric $Pnm2_1$ phase of HfO$_2$. It is proposed that this ferroelectric $Pnm2_1$ phase can account for the recently observed ferroelectricity in the (111)-oriented HfO$_2$-based thin film [Nature Materials 17, 1095-1100 (2018)]. Further investigation of this second functional ferroelectric phase in HfO$_2$ could potentially improve the performances of HfO$_2$-based films in logic and memory devices.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Tuning spin excitations in magnetic films by confinement

Spin excitations of magnetic thin films are the founding element for novel transport concepts in spintronics, magnonics, and magnetic devices in general. While spin dynamics have been extensively studied in bulk materials, their behaviour in mesoscopic films is less known due to experimental limitations. Here, we employ Resonant Inelastic X-Ray Scattering to investigate the spin excitation spectrum in mesoscopic Fe films, from bulk-like down to 3 unit cells thick. In bulk-like samples, we find isotropic, dispersive ferromagnons consistent with the dispersion observed by neutron scattering in bulk single crystals. As the thickness is reduced, these ferromagnons survive and evolve anisotropically: renormalising to lower energies along the out-of-plane direction while retaining their dispersion in the in-plane direction. This thickness dependence is captured by simple Heisenberg model calculations accounting for the confinement in the out-of-plane direction through the loss of Fe bonds. Our findings highlight the effects of mesoscopic scaling on spin dynamics and identify thickness as a knob for fine-tuning and controlling magnetic properties in films.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

The role of double TiO2 layers at the interface of FeSe/SrTiO3 superconductors

We determine the surface reconstruction of SrTiO3 used to achieve superconducting FeSe films in experiments, which is different from the 1x1 TiO2 terminated SrTiO3 assumed by most previous theoretical studies. In particular, we identify the existence of a double TiO2 layer at the SrTiO3-FeSe interface that plays two important roles. First, it facilitates the epitaxial growth of FeSe. Second, ab initio calculations reveal a strong tendency for electrons to transfer from an oxygen deficient SrTiO3 surface to FeSe when the double TiO2 layer is present. As a better electron donor than previously proposed interfacial structures, the double layer helps to remove the hole pocket in the FeSe at the Γ point of the Brillouin zone and leads to a band structure characteristic of superconducting samples. The characterization of the interface structure presented here is a key step towards the resolution of many open questions about this novel superconductor.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Oxide 2D electron gases as a route for high carrier densities on (001) Si

Two dimensional electron gases (2DEGs) formed at the interfaces of oxide heterostructures draw considerable interest owing to their unique physics and potential applications. Growing such heterostructures on conventional semiconductors has the potential to integrate their functionality with semiconductor device technology. We demonstrate 2DEGs on a conventional semiconductor by growing $GdTiO_3-SrTiO_3$ on silicon. Structural analysis confirms the epitaxial growth of heterostructures with abrupt interfaces and a high degree of crystallinity. Transport measurements show the conduction to be an interface effect, with $\sim 9\times 10^{13} \; cm^{-2}$ electrons per interface. Good agreement is demonstrated between the electronic behavior of structures grown on Si and on an oxide substrate, validating the robustness of this approach to bridge between lab-scale samples to a scalable, technologically relevant materials system.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Active silicon integrated nanophotonics: ferroelectric BaTiO3 devices

The integration of complex oxides on silicon presents opportunities to extend and enhance silicon technology with novel electronic, magnetic, and photonic properties. Among these materials, barium titanate (BaTiO3) is a particularly strong ferroelectric perovskite oxide with attractive dielectric and electro-optic properties. Here we demonstrate nanophotonic circuits incorporating ferroelectric BaTiO3 thin films on the ubiquitous silicon-on-insulator (SOI) platform. We grow epitaxial, single-crystalline BaTiO3 directly on SOI and engineer integrated waveguide structures that simultaneously confine light and an RF electric field in the BaTiO3 layer. Using on-chip photonic interferometers, we extract a large effective Pockels coefficient of 213 plus minus 49 pm/V, a value more than six times larger than found in commercial optical modulators based on lithium niobate. The monolithically integrated BaTiO3 optical modulators show modulation bandwidth in the gigahertz regime, which is promising for broadband applications.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Dynamical control of orbital occupations via a ferroelectric-induced polar state in metallic manganites

The breaking of orbital degeneracy on a transition metal cation and the resulting unequal electronic occupations of these orbitals provide a powerful lever over electron density and spin ordering in metal oxides. Here, we show how to dynamically modulate the orbital populations on Mn atoms at ferroelectric/manganite interfaces by switching the ferroelectric polarization. The change in orbital occupation can be as large as 10\%, greatly exceeding that of bulk manganites. This flippable orbital splitting is in large part controlled by the propagation of ferroelectric polar displacements into the interfacial region, a structural motif absent in the bulk and unique to the interface. We use {\it ab initio} theory, epitaxial thin film growth, and scanning transmission electron microscopy to verify the predicted interfacial polar state and concomitant orbital splittings.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Reversible modulation of orbital occupations via an interface-induced state in metallic manganites

The breaking of orbital degeneracy on a transition metal cation and the resulting unequal electronic occupations of these orbitals provide a powerful lever over electron density and spin ordering inmetal oxides. Here, we use ab initio calculations to show that reversibly modulating the orbital populations on Mn atoms can be achieved at ferroelectric/manganite interfaces by the presence of ferroelectric polarization on the nanoscale. The change in orbital occupation can be as large as 10%, greatly exceeding that of bulk manganites. This reversible orbital splitting is in large part controlled by the propagation of ferroelectric polar displacements into the interfacial region, a structural motif absent in the bulk and unique to the interface. We use epitaxial thin film growth and scanning transmission electron microscopy to verify this key interfacial polar distortion and discuss the potential of reversible control of orbital polarization via nanoscale ferroelectrics.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Synthesis of SnTe Nanoplates with {100} and {111} Surfaces

SnTe is a topological crystalline insulator that possesses spin-polarized, Dirac-dispersive surface states protected by crystal symmetry. Multiple surface states exist on the {100}, {110}, and {111} surfaces of SnTe, with the band structure of surface states depending on the mirror symmetry of a particular surface. Thus, to access surface states selectively, it is critical to control the morphology of SnTe such that only desired crystallographic surfaces are present. Here, we grow SnTe nanostructures using vapor-liquid-solid and vapor-solid growth mechanisms. Previously, SnTe nanowires and nanocrystals have been grown.1-4 In this report, we demonstrate synthesis of SnTe nanoplates with lateral dimensions spanning tens of microns and thicknesses of a hundred nanometers. The top and bottom surfaces are either (100) or (111), maximizing topological surface states on these surfaces. Magnetotransport on these SnTe nanoplates shows high bulk carrier density, consistent with bulk SnTe crystals arising due to defects such as Sn vacancies. In addition, we observe a structural phase transition in these nanoplates from the high temperature rock salt to low temperature rhombohedral structure. For nanoplates with very high carrier density, we observe a slight upturn in resistance at low temperatures, indicating electron-electron interactions.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Modifying the Electronic Orbitals of Nickelate Heterostructures Via Structural Distortions

We describe a general materials design approach that produces large orbital energy splittings (orbital polarization) in nickelate heterostructures, creating a two-dimensional single-band electronic surface at the Fermi energy. The resulting electronic structure mimics that of the high temperature cuprate superconductors. The two key ingredients are: (i) the construction of atomic-scale distortions about the Ni site via charge transfer and internal electric fields, and (ii) the use of three component (tri-component) superlattices to break inversion symmetry. We use {\it ab initio} calculations to implement the approach, with experimental verification of the critical structural motif that enables the design to succeed.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Thermal quench effects on ferroelectric domain walls

Using piezoresponse force microscopy on epitaxial ferroelectric thin films, we have measured the evolution of domain wall roughening as a result of heat-quench cycles up to 735C, with the effective roughness exponent ζ changing from 0.25 to 0.5. We discuss two possible mechanisms for the observed ζ increase: a quench from a thermal 1-dimensional configuration, and from a locally-equilibrated pinned configuration with a crossover from a 2- to 1-dimensional regime. We find that the post-quench spatial structure of the metastable states, qualitatively consistent with the existence of a growing dynamical length scale whose ultra slow evolution is primarily controlled by the defect configuration and heating process parameters, makes the second scenario more plausible. This interpretation suggests that pinning is relevant in a wide range of temperatures, and in particular, that purely thermal domain wall configurations might not be observable in this glassy system. We also demonstrate the crucial effects of oxygen vacancies in stabilizing domain structures.

0 citations0 reviewsNo code linkedOpen access