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Eric I. Altman

Eric I. Altman appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mtrl-scicond-mat.str-elphysics.app-ph

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Published work

5 published item(s)

preprint2022arXiv

Photothermally induced, reversible phase transition in methylammonium lead triiodide

Metal halide perovskites (MHPs) are known to undergo several structural phase transitions, from lower to higher symmetry, upon heating. While structural phase transitions have been investigated by a wide range of optical, thermal and electrical methods, most measurements are quasi-static and hence do not provide direct information regarding the fundamental timescale of phase transitions in this emerging class of semiconductors. Here we investigate the timescale of the orthorhombic-to-tetragonal phase transition in the prototypical metal halide perovskite, methylammonium lead triiodide (CH3NH3PbI3 or MAPbI3) using cryogenic nanosecond transient absorption spectroscopy. By using mid-infrared pump pulses to impulsively heat up the material at slightly below the phase-transition temperature and probing the transient optical response as a function of delay time, we observed a clean signature of a transient, reversible orthorhombic-to-tetragonal phase transition. The forward phase transition is found to proceed at tens of nanoseconds timescale, after which a backward phase transition progresses at a timescale commensurate with heat dissipation from the film to the underlying substrate. A high degree of transient phase transition is observed accounting for one third of the steady-state phase transition. In comparison to fully inorganic phase-change materials such as VO2, the orders of magnitude slower phase transition in MAPbI3 can be attributed to the large energy barrier associated with the strong hydrogen bonding between the organic cation and the inorganic framework. Our approach paves the way for unraveling phase transition dynamics in MHPs and other hybrid semiconducting materials.

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preprint2022arXiv

Scalable production of single 2D van der Waals layers through atomic layer deposition: Bilayer silica on metal foils and films

The self-limiting nature of atomic layer deposition (ALD) makes it an appealing option for growing single layers of two-dimensional van der Waals (2D-VDW) materials. In this paper it is demonstrated that a single layer of a 2D-VDW form of SiO2 can be grown by ALD on Au and Pd polycrystalline foils and epitaxial films. The silica was deposited by two cycles of bis (diethylamino) silane and oxygen plasma exposure at 525 K. Initial deposition produced a three-dimensionally disordered silica layer; however, subsequent annealing above 950 K drove a structural rearrangement resulting in 2D-VDW; this annealing could be performed at ambient pressure. Surface spectra recorded after annealing indicated that the two ALD cycles yielded close to the silica coverage obtained for 2D-VDW silica prepared by precision SiO deposition in ultra-high vacuum. Analysis of ALD-grown 2D-VDW silica on a Pd(111) film revealed the co-existence of amorphous and incommensurate crystalline 2D phases. In contrast, ALD growth on Au(111) films produced predominantly the amorphous phase while SiO deposition in UHV led to only the crystalline phase, suggesting that the choice of Si source can enable phase control.

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preprint2022arXiv

Two-Dimensional Transition Metal Silicate Formed on Ru (0001) by Hydrogenation

Bottom-up synthesis of two-dimensional transition-metal silicates has been challenging due to strong overlayer-substrate interactions, which prevents the exfoliation of the overlayer. Here, using density functional theory calculations, we systematically investigate the hydrogenation of the overlayer as a way to decrease the substrate and overlayer interactions. Using the Fe$_2$Si$_2$O$_8\cdot$O/Ru(0001) structure as our starting point Wlodarczyk et. al. [1], we study hydrogenation levels up to Fe$_2$Si$_2$O$_9$H$_4\cdot$/Ru(0001). Structural and thermodynamical properties are studied at different hydrogenation levels to show under which conditions, the exfoliation can be feasible. Simulated core-level shifts show that Fe is primarily in 3+ state through the hydrogenation of Fe$_2$Si$_2$O$_8\cdot$O/Ru(0001). Simulated reflection adsorption infrared spectroscopy (RAIRS) yield distinctive shifts in vibrational properties with increasing hydrogenation which can guide experiments. [1] R. Wlodarczyk et al., "Atomic structure of an ultrathin Fe-silicate film grown on a metal: A monolayer of clay?", J. Am. Chem. Soc., 135, 19222, (2013).

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preprint2016arXiv

The role of double TiO2 layers at the interface of FeSe/SrTiO3 superconductors

We determine the surface reconstruction of SrTiO3 used to achieve superconducting FeSe films in experiments, which is different from the 1x1 TiO2 terminated SrTiO3 assumed by most previous theoretical studies. In particular, we identify the existence of a double TiO2 layer at the SrTiO3-FeSe interface that plays two important roles. First, it facilitates the epitaxial growth of FeSe. Second, ab initio calculations reveal a strong tendency for electrons to transfer from an oxygen deficient SrTiO3 surface to FeSe when the double TiO2 layer is present. As a better electron donor than previously proposed interfacial structures, the double layer helps to remove the hole pocket in the FeSe at the Γ point of the Brillouin zone and leads to a band structure characteristic of superconducting samples. The characterization of the interface structure presented here is a key step towards the resolution of many open questions about this novel superconductor.

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preprint2014arXiv

Imaging the buried MgO/Ag interface: formation mechanism of the STM contrast

Scanning tunneling microscopy (STM) provides real-space electronic state information at the atomic scale that is most commonly used to study materials surfaces. An intriguing extension of the method is attempt to study the electronic structure at an insulator/conductor interface by performing low-bias imaging above the surface of an ultrathin insulating layer on the conducting substrate. We use first-principles theory to examine the physical mechanisms giving rise to the formation of low-bias STM images in the MgO/Ag system. We show that the main features of the low-bias STM contrast are completely determined by the atoms on the surface of MgO. Hence, the low-bias contrast is formed by states at the Fermi level in the Ag that propagate evanescently through the lattice and atomic orbitals of the MgO on their way to the surface. We develop a number of analysis techniques based on an ab initio tight-binding representation that allow identification of the origin of the STM contrast in cases where previous approaches have proven ambiguous.

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