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Christophe Fluhr

Christophe Fluhr appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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physics.ins-det

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Published work

4 published item(s)

preprint2020arXiv

Magnetic sensitivity of the Microwave Cryogenic Sapphire Oscillator

The Cryogenic Sapphire Oscillator is today recognized for its unprecedented frequency stability, mainly coming from the exceptional physical properties of its resonator made in a high quality sapphire crystal. With these instruments, the fractional frequency measurement resolution, currently of the order of 1e-16, is such that it is possible to detect very small phenomena like residual resonator environmental sensitivities. Thus, we highlighted an unexpected magnetic sensitivity of the Cryogenic Sapphire Oscillator (CSO) at low magnetic field. The fractional frequency sensitivity has been preliminary evaluated to 1e-13/Gauss, making this phenomenon a potential cause of frequency stability limitation. In this paper we report the experimental data related to the magnetic sensitivity of the quasi-transverse magnetic Whispering Gallery (WGH) modes excited in sapphire crystals differing from their paramagnetic contaminants concentration. The magnetic behavior of the WGH modes does not follow the expected theory combining the Curie law and the Zeeman effect affecting the Electron Spin Resonance of the paramagnetic ions present in the crystal.

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preprint2016arXiv

Characterization of Zero-Bias Microwave Diode Power Detectors at Cryogenic Temperature

We present the characterization of commercial tunnel diode low-level microwave power detectors at room and cryogenic temperatures. The sensitivity as well as the output voltage noise of the tunnel diodes are measured as functions of the applied microwave power, the signal frequency being 10 GHz. We highlight strong variations of the diode characteristics when the applied microwave power is higher than few microwatt. For a diode operating at ${4}$ K, the differential gain increases from ${1,000}$ V/W to about ${4,500}$ V/W when the power passes from ${-30}$ dBm to ${-20}$ dBm. The diode present a white noise floor equivalent to a NEP of ${0.8}$ pW/ ${\sqrt{\mathrm{Hz}}}$ and ${8}$ pW/${ \sqrt{\mathrm{Hz}}}$ at 4 K and 300 K respectively. Its flicker noise is equivalent to a relative amplitude noise power spectral density ${S_α(1~\mathrm{Hz})=-120}$~dB/Hz at ${4}$ K. Flicker noise is 10 dB higher at room temperature.

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preprint2015arXiv

Characterization of the individual short-term frequency stability of Cryogenic Sapphire Oscillators at the 1e-16 level

We present the characterisation of three Cryogenic Sapphire Oscillators using the three-corner-hat method. Easily implemented with commercial components and instruments, this method reveals itself very useful to analyse the frequency stability limitations of these state-of-the-art ultra-stable oscillators. The best unit presents a fractional frequency stability better than 5e-16 at 1 s and below 2e-16 for integration times less than 5,000s.

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preprint2015arXiv

Tests of Sapphire Crystals Produced with Different Growth Processes for Ultra-stable Microwave Oscillators

We present the characterization of 8-12 GHz whispering gallery mode resonators machined in high-quality sapphire crystals elaborated with different growth techniques. These microwave resonators are intended to constitute the reference frequency of ultra-stable Cryogenic Sapphire Oscillators. We conducted systematic tests near 4 K on these crystals to determine the unloaded Q-factor and the turnover temperature for whispering gallery modes in the 8-12 GHz frequency range. These characterizations show that high quality sapphire crystals elaborated with the Heat Exchange or the Kyropoulos growth technique are both suitable to meet a fractional frequency stability better than 1x10-15 for 1 s to 10.000 s integration times.

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