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Christian Franz

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Published work

6 published item(s)

preprint2023arXiv

Evolution of the spin dynamics during freezing in the spin-glass Fe$_{x}$Cr$_{1-x}$

In the iron--chromium system, Fe$_{x}$Cr$_{1-x}$, a wide dome of spin-glass behavior emerges when the ferromagnetism of iron is suppressed and the antiferromagnetism of chromium emerges as a function of increasing iron content $x$. As both, the high-temperature state and the characteristic cluster size vary as a function of $x$, different regimes of spin-glass behavior may be compared in a single, isostructural material system. Here, we report a study of the spin dynamics across the freezing process into the spin-glass state for different iron concentrations ($x = 0.145$, $0.175$, $0.21$) using Modulation of IntEnsity with Zero Effort (MIEZE) spectroscopy. In the parameter range studied, the relaxation process observed experimentally may be described well in terms of a stretched exponential. In the reentrant cluster-glass regime, $x = 0.145$, this behavior persists up to high temperatures. In comparison, in the superparamagnetic regime, $x = 0.175$ and $x = 0.21$, a single relaxation time at elevated temperatures is observed. For all samples studied, the spin relaxation exhibits a momentum dependence consistent with a power law, providing evidence of a dispersive character of the spin relaxation.

preprint2014arXiv

On/off switching of bit readout in bias-enhanced tunnel magneto-Seebeck effect

Thermoelectric effects in magnetic tunnel junctions are currently an attractive research topic. Here, we demonstrate that the tunnel magneto-Seebeck effect (TMS) in CoFeB/MgO/CoFeB tunnel junctions can be switched on to a logic 1 state and off to 0 by simply changing the magnetic state of the CoFeB electrodes. We enable this new functionality of magnetic tunnel junctions by combining a thermal gradient and an electric field. This new technique unveils the bias-enhanced tunnel magneto-Seebeck effect, which can serve as the basis for logic devices or memories in a green information technology with a pure thermal write and read process. Furthermore, the thermally generated voltages that are referred to as the Seebeck effect are well known to sensitively depend on the electronic structure and therefore have been valued in solid-state physics for nearly one hundred years. Here, we lift Seebeck's historic discovery from 1821 to a new level of current spintronics. Our results show that the signal crosses zero and can be adjusted by tuning a bias voltage that is applied between the electrodes of the junction; hence, the name of the effect is bias-enhanced tunnel magneto-Seebeck effect (bTMS). Via the spin- and energy-dependent transmission of electrons in the junction, the bTMS effect can be configured using the bias voltage with much higher control than the tunnel magnetoresistance (TMR) and even completely suppressed for only one magnetic configuration, which is either parallel (P) or anti-parallel (AP). This option allows a readout contrast for the magnetic information of -3000% at room temperature while maintaining a large signal for one magnetic orientation. This contrast is much larger than the value that can be obtained using the TMR effect. Moreover, our measurements are a step towards the experimental realization of high TMS ratios, which are predicted for specific Co-Fe compositions.

preprint2013arXiv

Ab initio studies of the tunneling magneto-Seebeck effect: influence of magnetic material

We found a strong influence of the composition of the magnetic material on the temperature dependence of the tunneling magneto-Seebeck effect in $MgO$ based tunnel junctions. We use \textit{ab initio} alloy theory to consider different $Fe_xCo_{1-x}$ alloys for the ferromagnetic layer. Even a small change of the composition leads to strong changes in the magnitude or even in the sign of the tunneling magneto-Seebeck effect. This can explain differences between recent experimental results. In addition, changing the barrier thickness from six to ten monolayers of $MgO$ leads also to a non-trivial change of the temperature dependence. Our results emphasize that the tunneling magneto-Seebeck effect depends very crucially and is very sensitive to material parameters and show that further experimental and theoretical investigations are necessary.

preprint2013arXiv

Band Structure and Effective Masses of ZnMgO

We analyze the influence of the Mg concentration on several important properties of the band structure of ZnMgO alloys in wurtzite structure using ab initio calculations. For this purpose, the band structure for finite concentrations is defined in terms of the Bloch spectral density, which can be calculated within the coherent potential approximation. We investigate the concentration dependence of the band gap and the crystal-field splitting of the valence bands. The effective electron and hole masses are determined by extending the effective mass model to finite concentrations. We compare our results with experimental results and other calculations.

preprint2013arXiv

Implementation of non-equilibrium vertex corrections in KKR: transport through disordered layers

The theoretical description of modern nanoelectronic devices requires a quantum mechanical treatment and often involves disorder, e.g. form alloys. Therefore, the ab initio theory of transport using non-equilibrium Green's functions is extended to the case of disorder described by the coherent potential approximation. This requires the calculation of non-equilibrium vertex corrections. We implement the vertex corrections in a Korringa-Kohn-Rostoker multiple scattering scheme. In order to verify our implementation and to demonstrate the accuracy and applicability we investigate a system of an iron-cobalt alloy layer embedded in copper. The results obtained with the coherent potential approximation are compared to supercell calculations. It turns out that vertex corrections play an important role for this system.

preprint2013arXiv

Influence of the magnetic material on tunneling magnetoresistance and spin-transfer torque in tunnel junctions: Ab initio studies

The dependence of tunneling magnetoresistance and spin-transfer torque in FeCo/MgO/FeCo tunnel junctions on the Co concentration and the bias voltage are investigated ab initio. We find that the tunneling magnetoresistance decreases with the Co concentration in contradiction with previous calculations but in agreement with recent experiments. This dependence is explained from bulk properties of the alloys. By using a realistic description of the disorder in the alloys we can show that even small amounts of disorder lead to a drastic drop in the tunneling magnetoresistance. This provides a quantitative explanation of the difference between calculated and measured values. The spin-transfer torque shows a linear voltage dependence for the in-plane component and a quadratic for the out-of-plane component for all concentrations at small bias voltages. In particular, the linear slope of the in-plane torque is independent of the concentration. For high bias voltages the in-plane torque shows a strong nonlinear deviation from the linear slope for high Co concentrations. This is explained from the same effects which govern the tunneling magnetoresistance.