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Researcher profile

Alexander Boehnke

Alexander Boehnke contributes to research discovery and scholarly infrastructure.

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cond-mat.mtrl-scicond-mat.mes-hall

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Published work

6 published item(s)

preprint2016arXiv

Comparison of laser induced and intrinsic tunnel magneto-Seebeck effect in CoFeB/MgAl$_2$O$_4$ and CoFeB/MgO magnetic tunnel junctions

We present a comparison of the tunnel magneto-Seebeck effect for laser induced and intrinsic heating. Therefore, Co$_{40}$Fe$_{40}$B$_{20}$/MgAl$_2$O$_4$ and Co$_{25}$Fe$_{55}$B$_{20}$/MgO magnetic tunnel junctions have been prepared. The TMS ratio of 3\,\% in case of the MAO MTJ agrees well with ratios found for other barrier materials, while the TMS ratio of 23\,\% of the MgO MTJ emphasizes the influence of the CoFe composition. We find results using the intrinsic method that differ in sign and magnitude in comparison to the results of the laser heating. The intrinsic contributions can alternatively be explained by the Brinkman model and the given junction properties. Especially, we are able to demonstrate that the symmetric contribution is solely influenced by the barrier asymmetry. Thus, we conclude that the symmetry analysis used for the intrinsic method is not suitable to unambiguously identify an intrinsic tunnel magneto-Seebeck effect.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Exchange bias effect in martensitic epitaxial Ni-Mn-Sn thin films applied to pin CoFeB/MgO/CoFeB magnetic tunnel junctions

The exchange bias effect is commonly used to shift the coercive field of a ferromagnet. This technique is crucial for the use of magnetic tunnel junctions as logic or memory devices. Therefore, an independent switching of the two ferromagnetic electrodes is necessary to guarantee a reliable readout. Here, we demonstrate that the intrinsic exchange bias effect of Ni-Mn-Sn can be used to apply a unidirectional anisotropy to magnetic tunnel junctions. For this, we use epitaxial Ni-Mn-Sn films as pinning layers for microfabricated CoFeB/MgO/CoFeB magnetic tunnel junctions. We compare the exchange bias field ($H_{\text{EB}}$) measured after field cooling in $-10$\,kOe external field by magnetization measurements with $H_{\text{EB}}$ obtained from tunnel magnetoresistance measurements. Consistent for both methods we find an exchange bias of about $H_{\text{EB}}=130$\,Oe at 10\,K, which decreases with increasing temperature and vanishes above 70\,K.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Structure and Giant Inverse Magnetocaloric Effect of Epitaxial Ni-Co-Mn-Al Films

The structural, magnetic, and magnetocaloric properties of epitaxial Ni-Co-Mn-Al thin films with different compositions have been studied. The films were deposited on MgO(001) substrates by co-sputtering on heated substrates. All films show a martensitic transformation, where the transformation temperatures are strongly dependent on the composition. The structure of the martensite phase is shown to be 14M. The metamagnetic martensitic transformation occurs from strongly ferromagnetic austenite to weakly magnetic martensite. The structural properties of the films were investigated by atomic force microscopy and temperature dependent X-ray diffraction. Magnetic and magnetocaloric properties were analyzed using temperature dependent and isothermal magnetization measurements. We find that Ni$_{41}$Co$_{10.4}$Mn$_{34.8}$Al$_{13.8}$ films show giant inverse magnetocaloric effects with magnetic entropy change of 17.5\,J\,kg$^{-1}$K$^{-1}$ for $μ_0 ΔH=5\,\text{T}$.

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preprint2014arXiv

On/off switching of bit readout in bias-enhanced tunnel magneto-Seebeck effect

Thermoelectric effects in magnetic tunnel junctions are currently an attractive research topic. Here, we demonstrate that the tunnel magneto-Seebeck effect (TMS) in CoFeB/MgO/CoFeB tunnel junctions can be switched on to a logic 1 state and off to 0 by simply changing the magnetic state of the CoFeB electrodes. We enable this new functionality of magnetic tunnel junctions by combining a thermal gradient and an electric field. This new technique unveils the bias-enhanced tunnel magneto-Seebeck effect, which can serve as the basis for logic devices or memories in a green information technology with a pure thermal write and read process. Furthermore, the thermally generated voltages that are referred to as the Seebeck effect are well known to sensitively depend on the electronic structure and therefore have been valued in solid-state physics for nearly one hundred years. Here, we lift Seebeck's historic discovery from 1821 to a new level of current spintronics. Our results show that the signal crosses zero and can be adjusted by tuning a bias voltage that is applied between the electrodes of the junction; hence, the name of the effect is bias-enhanced tunnel magneto-Seebeck effect (bTMS). Via the spin- and energy-dependent transmission of electrons in the junction, the bTMS effect can be configured using the bias voltage with much higher control than the tunnel magnetoresistance (TMR) and even completely suppressed for only one magnetic configuration, which is either parallel (P) or anti-parallel (AP). This option allows a readout contrast for the magnetic information of -3000% at room temperature while maintaining a large signal for one magnetic orientation. This contrast is much larger than the value that can be obtained using the TMR effect. Moreover, our measurements are a step towards the experimental realization of high TMS ratios, which are predicted for specific Co-Fe compositions.

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preprint2013arXiv

Physical characteristics and cation distribution of NiFe2O4 thin films with high resistivity prepared by reactive co-sputtering

We fabricated NiFe2O thin films on MgAl2O4 (001) substrates by reactive dc magnetron co-sputtering in a pure oxygen atmosphere at different substrate temperatures. The film properties were investigated by various techniques with a focus on their structure, surface topography, magnetic characteristics, and transport properties. Structural analysis revealed a good crystallization with epitaxial growth and low roughness and a similar quality as in films grown by pulsed laser deposition. Electrical conductivity measurements showed high room temperature resistivity (12 Ohmm), but low activation energy, indicating an extrinsic transport mechanism. A band gap of about 1.55 eV was found by optical spectroscopy. Detailed x-ray spectroscopy studies confirmed the samples to be ferrimagnetic with fully compensated Fe moments. By comparison with multiplet calculations of the spectra we found that the cation valencies are to a large extent Ni2+ and Fe3+.

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preprint2013arXiv

Time-resolved measurement of the tunnel magneto-Seebeck effect in a single magnetic tunnel junction

Recently, several groups have reported spin-dependent thermoelectric effects in magnetic tunnel junctions. In this paper, we present a setup for time-resolved measurements of thermovoltages and thermocurrents of a single micro- to nanometer-scaled tunnel junction. An electrically modulated diode laser is used to create a temperature gradient across the tunnel junction layer stack. This laser modulation technique enables the recording of time-dependent thermovoltage signals with a temporal resolution only limited by the preamplifier for the thermovoltage. So far, time-dependent thermovoltage could not be interpreted. Now, with the setup presented in this paper, it is possible to distinguish different Seebeck voltage contributions to the overall measured voltage signal in the μs time regime. A model circuit is developed that explains those voltage contributions on different sample types. Further, it will be shown that a voltage signal arising from the magnetic tunnel junction can only be observed when the laser spot is directly centered on top of the magnetic tunnel junction, which allows a lateral separation of the effects.

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