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Christian Heiliger

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Published work

11 published item(s)

preprint2015arXiv

Thermal transport and non-equilibrium temperature drop across a magnetic nanostructured interface

In a number of current experiments in the field of spin-caloritronics a temperature gradient across a nanostructured interface is applied and spin-dependent transport phenomena are observed. However, a lack in the interpretation and knowledge let it unclear how the temperature drop across a magnetic nanostructured interface looks like where both phonons and electrons may contribute to thermal transport. We answer this question for the case of a magnetic tunnel junction (MTJ) where the tunneling magneto Seebeck effect occurs. Nevertheless, our results can be extended to other nanostructured interfaces as well. Using an \textit{ab initio} method we explicitly calculate phonon and electron thermal conductance across the Fe/MgO/Fe-MTJs by using Green's function method. Further, by estimating the electron-phonon interaction in the Fe leads we are able to calculate the electron and phonon temperature profile across the Fe/MgO/Fe-MTJ. Our results show that there is an electron-phonon temperature imbalance at the Fe-MgO interfaces. In consequence, a revision of the interpretation of current experimental measurements might be necessary.

preprint2014arXiv

On/off switching of bit readout in bias-enhanced tunnel magneto-Seebeck effect

Thermoelectric effects in magnetic tunnel junctions are currently an attractive research topic. Here, we demonstrate that the tunnel magneto-Seebeck effect (TMS) in CoFeB/MgO/CoFeB tunnel junctions can be switched on to a logic 1 state and off to 0 by simply changing the magnetic state of the CoFeB electrodes. We enable this new functionality of magnetic tunnel junctions by combining a thermal gradient and an electric field. This new technique unveils the bias-enhanced tunnel magneto-Seebeck effect, which can serve as the basis for logic devices or memories in a green information technology with a pure thermal write and read process. Furthermore, the thermally generated voltages that are referred to as the Seebeck effect are well known to sensitively depend on the electronic structure and therefore have been valued in solid-state physics for nearly one hundred years. Here, we lift Seebeck's historic discovery from 1821 to a new level of current spintronics. Our results show that the signal crosses zero and can be adjusted by tuning a bias voltage that is applied between the electrodes of the junction; hence, the name of the effect is bias-enhanced tunnel magneto-Seebeck effect (bTMS). Via the spin- and energy-dependent transmission of electrons in the junction, the bTMS effect can be configured using the bias voltage with much higher control than the tunnel magnetoresistance (TMR) and even completely suppressed for only one magnetic configuration, which is either parallel (P) or anti-parallel (AP). This option allows a readout contrast for the magnetic information of -3000% at room temperature while maintaining a large signal for one magnetic orientation. This contrast is much larger than the value that can be obtained using the TMR effect. Moreover, our measurements are a step towards the experimental realization of high TMS ratios, which are predicted for specific Co-Fe compositions.

preprint2013arXiv

Ab initio studies of the tunneling magneto-Seebeck effect: influence of magnetic material

We found a strong influence of the composition of the magnetic material on the temperature dependence of the tunneling magneto-Seebeck effect in $MgO$ based tunnel junctions. We use \textit{ab initio} alloy theory to consider different $Fe_xCo_{1-x}$ alloys for the ferromagnetic layer. Even a small change of the composition leads to strong changes in the magnitude or even in the sign of the tunneling magneto-Seebeck effect. This can explain differences between recent experimental results. In addition, changing the barrier thickness from six to ten monolayers of $MgO$ leads also to a non-trivial change of the temperature dependence. Our results emphasize that the tunneling magneto-Seebeck effect depends very crucially and is very sensitive to material parameters and show that further experimental and theoretical investigations are necessary.

preprint2013arXiv

Band Structure and Effective Masses of ZnMgO

We analyze the influence of the Mg concentration on several important properties of the band structure of ZnMgO alloys in wurtzite structure using ab initio calculations. For this purpose, the band structure for finite concentrations is defined in terms of the Bloch spectral density, which can be calculated within the coherent potential approximation. We investigate the concentration dependence of the band gap and the crystal-field splitting of the valence bands. The effective electron and hole masses are determined by extending the effective mass model to finite concentrations. We compare our results with experimental results and other calculations.

preprint2013arXiv

Implementation of non-equilibrium vertex corrections in KKR: transport through disordered layers

The theoretical description of modern nanoelectronic devices requires a quantum mechanical treatment and often involves disorder, e.g. form alloys. Therefore, the ab initio theory of transport using non-equilibrium Green's functions is extended to the case of disorder described by the coherent potential approximation. This requires the calculation of non-equilibrium vertex corrections. We implement the vertex corrections in a Korringa-Kohn-Rostoker multiple scattering scheme. In order to verify our implementation and to demonstrate the accuracy and applicability we investigate a system of an iron-cobalt alloy layer embedded in copper. The results obtained with the coherent potential approximation are compared to supercell calculations. It turns out that vertex corrections play an important role for this system.

preprint2013arXiv

Influence of the magnetic material on tunneling magnetoresistance and spin-transfer torque in tunnel junctions: Ab initio studies

The dependence of tunneling magnetoresistance and spin-transfer torque in FeCo/MgO/FeCo tunnel junctions on the Co concentration and the bias voltage are investigated ab initio. We find that the tunneling magnetoresistance decreases with the Co concentration in contradiction with previous calculations but in agreement with recent experiments. This dependence is explained from bulk properties of the alloys. By using a realistic description of the disorder in the alloys we can show that even small amounts of disorder lead to a drastic drop in the tunneling magnetoresistance. This provides a quantitative explanation of the difference between calculated and measured values. The spin-transfer torque shows a linear voltage dependence for the in-plane component and a quadratic for the out-of-plane component for all concentrations at small bias voltages. In particular, the linear slope of the in-plane torque is independent of the concentration. For high bias voltages the in-plane torque shows a strong nonlinear deviation from the linear slope for high Co concentrations. This is explained from the same effects which govern the tunneling magnetoresistance.

preprint2013arXiv

Parameter space for thermal spin-transfer torque

Thermal spin-transfer torque describes the manipulation of the magnetization by the application of a heat flow. The effect has been calculated theoretically by Jia et al. in 2011. It is found to require large temperature gradients in the order of Kelvins across an ultra thin MgO barrier. In this paper, we present results on the fabrication and the characterization of magnetic tunnel junctions with 3 monolayer thin MgO barriers. The quality of the interfaces at different growth conditions is studied quantitatively via high-resolution transmission electron microscopy imaging. We demonstrate tunneling magneto resistance ratios of up to 55% to 64% for 3 to 4 monolayer barrier thickness. Magnetic tunnel junctions with perpendicular magnetization anisotropy show spin-transfer torque switching with a critical current of 0.2 MA/cm$^2$. The thermally generated torque is calculated ab initio using the Korringa-Kohn-Rostoker and non-equilibrium Green's function method. Temperature gradients generated from femtosecond laser pulses were simulated using COMSOL, revealing gradients of 20 K enabling thermal spin-transfer-torque switching.

preprint2013arXiv

Thermal spin-transfer torque in magnetic tunnel junctions

The thermal spin-transfer torque (TSTT) is an effect to switch the magnetic free layer in a magnetic tunnel junction by a temperature gradient only. We present ab initio calculations of the TSTT. In particular, we discuss the influence of magnetic layer composition by considering $\text{Fe}_\text{x}\text{Co}_{\text{1-x}}$ alloys. Further, we compare the TSTT to the bias voltage driven STT and discuss the requirements for a possible thermal switching. For example, only for very thin barriers of 3 monolayers MgO a thermal switching is imaginable. However, even for such a thin barrier the TSTT is still too small for switching at the moment and further optimization is needed. In particular, the TSTT strongly depends on the composition of the ferromagentic layer. In our current study it turns out that at the chosen thickness of the ferromagnetic layer pure Fe gives the highest thermal spin-transfer torque.

preprint2013arXiv

Unusual angular dependence of tunneling magneto-Seebeck effect

We find an unusual angular dependence of the tunneling magneto-Seebeck effect (TMS). The conductance shows normally a cosine-dependence with the angle between the magnetizations of the two ferromagnetic leads. In contrast, the angular dependence of the TMS depends strongly on the tunneling magneto resistance (TMR) ratio. For small TMR ratios we obtain also a cosine-dependence whereas for very large TMR ratios the angular dependence approaches a step-like function.

preprint2011arXiv

Seebeck Effect in Magnetic Tunnel Junctions

Creating temperature gradients in magnetic nanostructures has resulted in a new research direction, i.e., the combination of magneto- and thermoelectric effects. Here, we demonstrate the observation of one important effect of this class: the magneto-Seebeck effect. It is observed when a magnetic configuration changes the charge based Seebeck coefficient. In particular, the Seebeck coefficient changes during the transition from a parallel to an antiparallel magnetic configuration in a tunnel junction. In that respect, it is the analog to the tunneling magnetoresistance. The Seebeck coefficients in parallel and antiparallel configuration are in the order of the voltages known from the charge-Seebeck effect. The size and sign of the effect can be controlled by the composition of the electrodes' atomic layers adjacent to the barrier and the temperature. Experimentally, we realized 8.8 % magneto-Seebeck effect, which results from a voltage change of about -8.7 μV/K from the antiparallel to the parallel direction close to the predicted value of -12.1 μV/K.

preprint2011arXiv

Spin caloritronics in magnetic tunnel junctions: Ab initio studies

This Letter presents ab initio calculations of the magneto-thermoelectric power (MTEP) and of the spin-Seebeck coefficient in MgO based tunnel junctions with Fe and Co leads. In addition, the normal thermopower is calculated and gives for pure Fe and Co an quantitative agreement with experiments. Consequently, the calculated values in tunnel junctions are a good estimation of upper limits. In particular, spin-Seebeck coefficients of more than 100 μV/K are possible. The MTEP ratio exceed several 1000% and depends strongly on temperature. In the case of Fe leads the MTEP ratio diverges even to infinity at certain temperatures. The spin-Seebeck coefficient as a function of temperature shows a non-trivial dependence. For Fe/MgO/Fe even the sign of the coefficient changes with temperature.