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Chen Ge

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Published work

9 published item(s)

preprint2022arXiv

Atomically engineered cobaltite layers for robust ferromagnetism

Emergent phenomena at heterointerfaces are directly associated with the bonding geometry of adjacent layers. Effective control of accessible parameters, such as the bond length and bonding angles, offers an elegant method to tailor competing energies of the electronic and magnetic ground states. In this study, we construct unit thick syntactic layers of cobaltites within a strongly tilted octahedral matrix via atomically precise synthesis. The octahedral tilt patterns of adjacent layers propagate into cobaltites, leading to a continuation of octahedral tilting while maintaining significant misfit tensile strain. These effects induce severe rumpling within an atomic plane of neighboring layers triggers the electronic reconstruction between the splitting orbitals. First-principles calculations reveal that the cobalt ions transits to a higher spin state level upon octahedral tilting, resulting in robust ferromagnetism in ultrathin cobaltites. This work demonstrates a design methodology for fine-tuning the lattice and spin degrees of freedom in correlated quantum heterostructures by exploiting epitaxial geometric engineering.

preprint2022arXiv

Strain-engineered high-temperature ferromagnetic Oxygen-substituted NaMnF3 from first principles

Using first-principles calculations, we investigated the magnetic, electronic, and structural properties of oxygen-substituted NaMnF3 (NaMnF1.5O1.5) with in-plane biaxial strain. For simplicity, a structure containing an oxygen octahedron is used to explore the underlying physical mechanism. We found that the oxygen octahedron induces a transition from an insulating antiferromagnet to a high-temperature half-metallic ferromagnet. More importantly, the Curie temperature can be significantly enhanced and even might reach room temperature by applying tensile strain. The changing trends of exchange coupling constants with the increasing biaxial tensile strain can be attributed to the cooperative effects of Jahn-Teller distortion and rotation distortion. It is expected that these findings can enrich the versatility of NaMnF3 and make it a promising candidate for spintronic applications.

preprint2021arXiv

Anisotropic electronic phase transition in CrN epitaxial thin films

Electronic phase transition in strongly correlated materials is extremely sensitive to the dimensionality and crystallographic orientations. Transition metal nitrides (TMNs) are seldom investigated due to the difficulty in fabricating the high-quality and stoichiometric single crystals. In this letter, we report the epitaxial growth and electronic properties of CrN films on different-oriented NdGaO3 (NGO) substrates. Astonishingly, the CrN films grown on (110)-oriented NGO substrates maintain a metallic phase, whereas the CrN films grown on (010)-oriented NGO substrates are semiconducting. We attribute the unconventional electronic transition in the CrN films to the strongly correlation with epitaxial strain. The effective modulation of bandgap by the anisotropic strain triggers the metal-to-insulator transition consequently. This work provides a convenient approach to modify the electronic ground states of functional materials using anisotropic strain and further stimulates the investigations of TMNs.

preprint2021arXiv

Ferromagnetic Enhancement in LaMnO3 Films with Release and Flexure

A variety of novel phenomena and functionalities emerge from lowering the dimensionality of materials and enriching the degrees of freedom in modulation. In this work, it is found that the saturation magnetization of LaMnO3 (LMO) films is largely enhanced by 56% after releasing from a brand-new phase of tetragonal strontium aluminate buffer layer, and is significantly increased by 92% with bending films to a curvature of 1 mm-1 using a water-assisted direct-transferring method. Meanwhile, the Curie temperature of LMO films has been improved by 13 K. High-resolution spherical aberration-corrected scanning transmission electron microscopy and first-principles calculations unambiguously demonstrate that the enhanced ferromagnetism is attributed to the strengthened Mn-O-Mn super-exchange interactions from the augmented characteristics of the unconventional P21/n structure caused by the out-of-plane lattice shrinking after strain releasing and increased flexure degree of freestanding LMO films. This work paves a way to achieve large-scale and crack-and-wrinkle-free freestanding films of oxides with largely improved functionalities.

preprint2021arXiv

Room-temperature ferromagnetism at an oxide/nitride interface

Heterointerfaces have led to the discovery of novel electronic and magnetic states because of their strongly entangled electronic degrees of freedom. Single-phase chromium compounds always exhibit antiferromagnetism following the prediction of Goodenough-Kanamori rules. So far, exchange coupling between chromium ions via hetero-anions has not been explored and the associated quantum states is unknown. Here we report the successful epitaxial synthesis and characterizations of chromium oxide (Cr2O3)-chromium nitride (CrN) superlattices. Room-temperature ferromagnetic spin ordering is achieved at the interfaces between these two antiferromagnets, and the magnitude of the effect decays with increasing layer thickness. First-principles calculations indicate that robust ferromagnetic spin interaction between Cr3+ ions via anion-hybridizations across the interface yields the lowest total energy. This work opens the door to fundamental understanding of the unexpected and exceptional properties of oxide-nitride interfaces and provides access to hidden phases at low-dimensional quantum heterostructures.

preprint2021arXiv

Structural Twinning-induced Insulating Phase in CrN (111) Films

Electronic states of a correlated material can be effectively modified by structural variations delivered from a single-crystal substrate. In this letter, we show that the CrN films grown on MgO (001) substrates have a (001) orientation, whereas the CrN films on α-Al2O3 (0001) substrates are oriented along (111) direction parallel to the surface normal. Transport properties of CrN films are remarkably different depending on crystallographic orientations. The critical thickness for the metal-insulator transition (MIT) in CrN 111 films is significantly larger than that of CrN 001 films. In contrast to CrN 001 films without apparent defects, scanning transmission electron microscopy results reveal that CrN 111 films exhibit strain-induced structural defects, e. g. the periodic horizontal twinning domains, resulting in an increased electron scattering facilitating an insulating state. Understanding the key parameters that determine the electronic properties of ultrathin conductive layers is highly desirable for future technological applications.

preprint2016arXiv

Evolution of the electronic and lattice structure with carrier injection in BiFeO$_3$

We report a density functional study on the evolution of the electronic and lattice structure in BiFeO$_3$ with injected electrons and holes. First, the self-trapping of electrons and holes were investigated. We found that the injected electrons tend to be localized on Fe sites due to the local lattice expansion, the on-site Coulomb interaction of Fe $3d$ electrons, and the antiferromagnetic order in BiFeO$_3$. The injected holes tend to be delocalized if the on-site Coulomb interaction of O $2p$ is weak (in other words, $U_\mathrm{O}$ is small). Single center polarons and multi-center polarons are formed with large and intermediate $U_\mathrm{O}$, respectively. With intermediate $U_\mathrm{O}$, multi-center polarons can be formed. We also studied the lattice distortion with the injection of carriers by assuming the delocalization of these carriers. We found that the ferroelectric off-centering of BiFeO$_3$ increases with the concentration of the electrons injected and decreases with that of the holes injected. It was also found that a structural phase transition from $R3c$ to the non-ferroelectric $Pbnm$ occurs, with the hole concentration over 8.7$\times10^{19} cm^{-3}$. The change of the off-centering is mainly due to the change of the lattice volume. The understanding of the carrier localization mechanism can help to optimize the functionality of ferroelectric diodes and the ferroelectric photovoltage devices, while the understanding of the evolution of the lattice with carriers can help tuning the ferroelectric properties by the carriers in BiFeO$_3$.

preprint2016arXiv

Insulating phase at low temperature in ultrathin La0.8Sr0.2MnO3 films

Metal-insulator transition is observed in the La0.8Sr0.2MnO3 thin films with thickness larger than 5 unit cells. Insulating phase at lower temperature appeared in the ultrathin films with thickness ranging from 6 unit cells to 10 unit cells and it is found that the Mott variable range hopping conduction dominates in this insulating phase at low temperature with a decrease of localization length in thinner films. A deficiency of oxygen content and a resulted decrease of the Mn valence have been observed in the ultrathin films with thickness smaller than or equal to 10 unit cells by studying the aberration-corrected scanning transmission electron microscopy and electron energy loss spectroscopy of the films. These results suggest that the existence of the oxygen vacancies in thinner films suppresses the double-exchange mechanism and contributes to the enhancement of disorder, leading to a decrease of the Curie temperature and the low temperature insulating phase in the ultrathin films. In addition, the suppression of the magnetic properties in thinner films indicates stronger disorder of magnetic moments, which is considered to be the reason for this decrease of the localization length.

preprint2015arXiv

Ferroelectric Control of Metal-Insulator Transition

We propose a method of controlling the metal-insulator transition of one perovskite material at its interface with a another ferroelectric material based on first principle calculations. The operating principle is that the rotation of oxygen octahedra tuned by the ferroelectric polarization can modulate the superexchange interaction in this perovskite. We designed a tri-color superlattice of (BiFeO$_3$)$_N$/LaNiO$_3$/LaTiO$_3$, in which the BiFeO$_3$ layers are ferroelectric, the LaNiO$_3$ layer is the layer of which the electronic structure is to be tuned, and LaTiO$_3$ layer is inserted to enhance the inversion asymmetry. By reversing the ferroelectric polarization in this structure, there is a metal-insulator transition of the LaNiO$_3$ layer because of the changes of crystal field splitting of the Ni $e_g$ orbitals and the bandwidth of the Ni in-plane $e_g$ orbital. It is highly expected that a metal-transition can be realized by designing the structures at the interfaces for more materials.