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Researcher profile

C. Stephen Hellberg

C. Stephen Hellberg contributes to research discovery and scholarly infrastructure.

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cond-mat.mtrl-scicond-mat.mes-hallcond-mat.str-elcond-mat.supr-conquant-ph

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Published work

5 published item(s)

preprint2022arXiv

Expanding variational quantum eigensolvers to larger systems by dividing the calculations between classical and quantum hardware

We present a hybrid classical/quantum algorithm for efficiently solving the eigenvalue problem of many-particle Hamiltonians on quantum computers with limited resources by splitting the workload between classical and quantum processors. This algorithm reduces the needed number of qubits at the expense of an increased number of quantum evaluations. We demonstrate the method for the Hubbard model and show how the conservation of the z-component of the total spin allows the spin-up and spin-down configurations to be computed on classical and quantum hardware, respectively. Other symmetries can be exploited in a similar manner.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Stacking-Dependent Optical Properties in Bilayer WSe2

The twist angle between the monolayers in van der Waals heterostructures provides a new degree of freedom in tuning material properties. We compare the optical properties of WSe2 homobilayers with 2H and 3R stacking using photoluminescence, Raman spectroscopy, and reflectance contrast measurements under ambient and cryogenic temperatures. Clear stacking- dependent differences are evident for all temperatures, with both photoluminescence and reflectance contrast spectra exhibiting a blue shift in spectral features in 2H compared to 3R bilayers. Density functional theory (DFT) calculations elucidate the source of the variations and the fundamental differences between 2H and 3R stackings. DFT finds larger energies for both A and B excitonic features in 2H than in 3R, consistent with experimental results. In both stacking geometries, the intensity of the dominant A1g Raman mode exhibits significant changes as a function of laser excitation wavelength. These variations in intensity are intimately linked to the stacking- and temperature-dependent optical absorption through resonant enhancement effects. The strongest enhancement is achieved when the laser excitation coincides with the C excitonic feature, leading to the largest Raman intensity under 514 nm excitation in 2H stacking and at 520 nm in 3R stacked WSe2 bilayers.

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preprint2020arXiv

Theory of Superconductivity at the LaAlO3/SrTiO3 heterointerface: Electron pairing mediated by deformation of ferroelastic domain walls

SrTiO$_3$ is a superconducting semiconductor with a pairing mechanism that is not well understood. SrTiO$_3$ undergoes a ferroelastic transition at $T=$ 105 K, leading to the formation of domains with boundaries that can couple to electronic properties. At two-dimensional SrTiO$_3$ interfaces, the orientation of these ferroelastic domains is known to couple to the electron density, leading to electron-rich regions that favor out-of-plane distortions and electron-poor regions that favor in-plane distortion. Here we show that ferroelastic domain walls support low energy excitations that are analogous to capillary waves at the interface of two fluids. We propose that these capillary waves mediate electron pairing at the LaAlO$_3$/SrTiO$_3$ interface, resulting in superconductivity around the edges of electron-rich regions. This mechanism is consistent with recent experimental results reported by Pai et al. [PRL $\bf{120}$, 147001 (2018)]

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preprint2019arXiv

Atomic reconstruction and moiré patterns in transition metal dichalcogenide van der Waals heterostructures

Van der Waals layered materials, such as transition metal dichalcogenides (TMDs), are an exciting class of materials with weak interlayer bonding which enables one to create van der Waals heterostructures (vdWH). Recent work has shown that control of the twist angle between layers can have a dramatic effect on vdWH properties. For TMD vdWH, twist angle has been treated solely through the use of rigid-lattice moiré patterns. No atomic reconstruction, i.e. any rearrangement of atoms within the individual layers, has been reported experimentally to date. Here we demonstrate that vdWH of MoSe2/WSe2 and MoS2/WS2 at twist angles less than 1° undergo significant atomic level reconstruction leading to discrete commensurate domains divided by narrow domain walls, rather than a smoothly varying rigid-lattice moiré pattern as has been assumed in prior work. Using conductive atomic force microscopy (CAFM), we show that the stacking orientation of the two TMD crystals has a profound impact on the atomic reconstruction, consistent with recent theoretical work on graphene/graphene and MoS2/MoS2 structures and experimental work on graphene bilayers and hBN/graphene vdWH. Transmission electron microscopy (TEM) provides additional evidence of atomic reconstruction in MoSe2/WSe2 structures and demonstrates the transition between a rigid-lattice moiré pattern for large angles and atomic reconstruction for small angles. We use density functional theory to calculate the band structures of the commensurate reconstructed domains and find that the modulation of the relative electronic band edges is consistent with the CAFM results and photoluminescence spectra from reconstructed vdWH. The presence of atomic reconstruction in TMD heterostructures and the observed impact on nanometer-scale electronic properties provides fundamental insight into the behavior of this important class of heterostructures.

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preprint2010arXiv

Quantum simulation of multiple-exciton generation in a nanocrystal by a single photon

We have shown theoretically that efficient multiple exciton generation (MEG) by a single photon can be observed in small nanocrystals (NCs). Our quantum simulations that include hundreds of thousands of exciton and multi-exciton states demonstrate that the complex time-dependent dynamics of these states in a closed electronic system yields a saturated MEG effect on a picosecond timescale. Including phonon relaxation confirms that efficient MEG requires the exciton--biexciton coupling time to be faster than exciton relaxation time.

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