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Researcher profile

C. Piermarocchi

C. Piermarocchi contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mes-hallcond-mat.mtrl-sciphysics.optics

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Published work

3 published item(s)

preprint2011arXiv

All-optical four-state magnetization reversal in (Ga,Mn)As ferromagnetic semiconductors

Using density matrix equations of motion and a tight-binding band calculation, we predict all-optical switching between four metastable magnetic states of (III,Mn)As ferromagnets. This switching is initiated non-thermally within 100fs, during nonlinear coherent photoexcitation. For a single optical pulse, magnetization reversal is completed after $\sim$100 ps and controlled by the coherent femtosecond photoexcitation. Our predicted switching comes from magnetic nonlinearities triggered by a femtosecond magnetization tilt that is sensitive to un--adiabatic light--induced spin interactions.

0 citations0 reviewsNo code linkedOpen access
preprint2007arXiv

Light-mass Bragg cavity polaritons in planar quantum dot lattices

The exciton-polariton modes of a quantum dot lattice embedded in a planar optical cavity are theoretically investigated. Umklapp terms, in which an exciton interacts with many cavity modes differing by reciprocal lattice vectors, appear in the Hamiltonian due to the periodicity of the dot lattice. We focus on Bragg polariton modes obtained by tuning the exciton and the cavity modes into resonance at high symmetry points of the Brillouin Zone. Depending on the microcavity design these polaritons modes at finite in-plane momentum can be guided and can have long lifetimes. Moreover, their effective mass can be extremely small, of the order of $10^{-8} m_0$ ($m_0$ is the bare electron mass), and they constitute the lightest exciton-like quasi-particles in solids.

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preprint2007arXiv

Scanning-probe spectroscopy of semiconductor donor molecules

Semiconductor devices continue to press into the nanoscale regime, and new applications have emerged for which the quantum properties of dopant atoms act as the functional part of the device, underscoring the necessity to probe the quantum structure of small numbers of dopant atoms in semiconductors[1-3]. Although dopant properties are well-understood with respect to bulk semiconductors, new questions arise in nanosystems. For example, the quantum energy levels of dopants will be affected by the proximity of nanometer-scale electrodes. Moreover, because shallow donors and acceptors are analogous to hydrogen atoms, experiments on small numbers of dopants have the potential to be a testing ground for fundamental questions of atomic and molecular physics, such as the maximum negative ionization of a molecule with a given number of positive ions[4,5]. Electron tunneling spectroscopy through isolated dopants has been observed in transport studies[6,7]. In addition, Geim and coworkers identified resonances due to two closely spaced donors, effectively forming donor molecules[8]. Here we present capacitance spectroscopy measurements of silicon donors in a gallium-arsenide heterostructure using a scanning probe technique[9,10]. In contrast to the work of Geim et al., our data show discernible peaks attributed to successive electrons entering the molecules. Hence this work represents the first addition spectrum measurement of dopant molecules. More generally, to the best of our knowledge, this study is the first example of single-electron capacitance spectroscopy performed directly with a scanning probe tip[9].

0 citations0 reviewsNo code linkedOpen access