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Source author record

G. F. Quinteiro

G. F. Quinteiro appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mes-hallphysics.opticscond-mat.otherquant-ph

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Published work

11 published item(s)

preprint2020arXiv

Dark Exciton Preparation in a Quantum Dot by a Longitudinal Light Field Tuned to Higher Exciton States

Several important proposals to use semiconductor quantum dots in quantum information technology rely on the control of the dark exciton ground states, such as dark exciton based qubits with a $μ$s life time. In this paper, we present an efficient way to occupy the dark exciton ground state by a single short laser pulse. The scheme is based on an optical excitation with a longitudinal field component featured by, e.g., radially polarized beams or certain Laguerre-Gauss or Bessel beams. Utilizing this component, we show within a configuration interaction approach that high-energy exciton states composed of light-hole excitons and higher dark heavy-hole excitons can be addressed. When the higher exciton relaxes, a dark exciton in its ground state is created.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Formulation of the twisted-light--matter interaction at the phase singularity: the twisted-light gauge

Twisted light is light carrying orbital angular momentum. The profile of such a beam is a ring-like structure with a node at the beam axis, where a phase singularity exits. Due to the strong spatial inhomogeneity the mathematical description of twisted-light--matter interaction is non-trivial, in particular close to the phase singularity, where the commonly used dipole-moment approximation cannot be applied. In this paper we show that, if the polarization and the orbital angular momentum of the twisted-light beam have the same sign, a Hamiltonian similar to the dipole-moment approximation can be derived. However, if the signs of polarization and orbital angular momentum differ, in general the magnetic parts of the light beam become of significant importance and an interaction Hamiltonian which only accounts for electric fields, as in the dipole-moment approximation, is inappropriate. We discuss the consequences of these findings for twisted-light excitation of a semiconductor nanostructures, e.g., a quantum dot, placed at the phase singularity.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Light-hole transitions in quantum dots: realizing full control by highly focused optical-vortex beams

An optical-vortex is an inhomogeneous light beam having a phase singularity at its axis, where the intensity of the electric and/or magnetic field may vanish. Already well studied are the paraxial beams, which are known to carry well defined values of spin (polarization $σ$) and orbital angular momenta; the orbital angular momentum per photon is given by the topological charge $\ell$ times the Planck constant. Here we study the light-hole--to--conduction band transitions in a semiconductor quantum dot induced by a highly-focused beam originating from a $\ell=1$ paraxial optical vortex. We find that at normal incidence the pulse will produce two distinct types of electron--hole pairs, depending on the relative signs of $σ$ and $\ell$. When sign($σ$)$=$sign($\ell$), the pulse will create electron--hole pairs with band+spin and envelope angular momenta both equal to one. In contrast, for sign($σ$)$\neq$sign($\ell$), the electron-hole pairs will have neither band+spin nor envelope angular momenta. A tightly-focused optical-vortex beam thus makes possible the creation of pairs that cannot be produced with plane waves at normal incidence. With the addition of co-propagating plane waves or switching techniques to change the charge $\ell$ both the band+spin and the envelope angular momenta of the pair wave-function can be precisely controlled. We discuss possible applications in the field of spintronics that open up.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Below-bandgap excitation of bulk semiconductors by twisted light

I theoretically investigate the response of bulk semiconductors to excitation by twisted light below the energy bandgap. To this end, I modify a well-known model of light-semiconductor interaction to account for the conservation of the light's momentum. I show that the excited states can be thought of as a superposition of slightly perturbed exciton states undergoing a complex center-of-mass motion. In addition, the absorption would occur at a slightly shifted energy (compared to plane waves) and would exhibit complex spatial patterns in the polarization and current.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Electronic transitions in quantum dots and rings induced by inhomogeneous off-centered light beams

We theoretically investigate the effect of inhomogeneous light beams with (twisted light) and without (plane-wave light) orbital angular momentum on semiconductor-based nanostructures, when the symmetry axes of the beam and the nanostructure are displaced parallel to each other. Exact analytical results are obtained by expanding the off-centered light field in terms of the appropriate light modes centered around the nanostructure. We demonstrate how electronic transitions involving the transfer of different amounts of orbital angular momentum are switched on and off as a function of the separation between the axes of the beam and the system. In particular, we show that even off-centered plane-wave beams induce transitions such that the angular momenta of the initial and final states are different.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Photoexcitation of graphene with twisted light

We study theoretically the interaction of twisted light with graphene. The light-matter interaction matrix elements between the tight-binding states of electrons in graphene are determined near the Dirac points. We examine the dynamics of the photoexcitation process by posing the equations of motion of the density matrix and working up to second order in the field. The time evolution of the angular momentum of the photoexcited electrons and their associated photocurrents are examined in order to elucidate the mechanisms of angular momentum transfer. We find that the transfer of spin and orbital angular momentum from light to the electrons is more akin here to the case of intraband than of interband transitions in semiconductors, due to the fact that the two relevant energy bands of graphene originate from the same atomic orbitals.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Twisted-light-induced intersubband transitions in quantum wells at normal incidence

We examine theoretically the intersubband transitions induced by laser beams of light with orbital angular momentum (twisted light) in semiconductor quantum wells at normal incidence. These transitions become possible in the absence of gratings thanks to the fact that collimated laser beams present a component of the light's electric field in the propagation direction. We derive the matrix elements of the light-matter interaction for a Bessel-type twisted-light beam represented by its vector potential in the paraxial approximation. Then, we consider the dynamics of photo-excited electrons making intersubband transitions between the first and second subbands of a standard semiconductor quantum well. Finally, we analyze the light-matter matrix elements in order to evaluate which transitions are more favorable for given orbital angular momentum of the light beam in the case of small semiconductor structures.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Efficient spin control in high-quality-factor planar micro-cavities

A semiconductor microcavity embedding donor impurities and excited by a laser field is modelled. By including general decay and dephasing processes, and in particular cavity photon leakage, detailed simulations show that control over the spin dynamics is significally enhanced in high-quality-factor cavities, in which case picosecond laser pulses may produce spin-flip with high-fidelity final states.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Twisted-light-induced optical transitions in semiconductors: Free-carrier quantum kinetics

We theoretically investigate the interband transitions and quantum kinetics induced by light carrying orbital angular momentum, or twisted light, in bulk semiconductors. We pose the problem in terms of the Heisenberg equations of motion of the electron populations, and inter- and intra-band coherences. Our theory extends the free-carrier Semiconductor Bloch Equations to the case of photo-excitation by twisted light. The theory is formulated using cylindrical coordinates, which are better suited to describe the interaction with twisted light than the usual cartesian coordinates used to study regular optical excitation. We solve the equations of motion in the low excitation regime, and obtain analytical expressions for the coherences and populations; with these, we calculate the orbital angular momentum transferred from the light to the electrons and the paramagnetic and diamagnetic electric current densities.

0 citations0 reviewsNo code linkedOpen access
preprint2008arXiv

Theory of the optical absorption of light carrying orbital angular momentum by semiconductors

We develop a free-carrier theory of the optical absorption of light carrying orbital angular momentum (twisted light) by bulk semiconductors. We obtain the optical transition matrix elements for Bessel-mode twisted light and use them to calculate the wave function of photo-excited electrons to first-order in the vector potential of the laser. The associated net electric currents of first and second-order on the field are obtained. It is shown that the magnetic field produced at the center of the beam for the $\ell=1$ mode is of the order of a millitesla, and could therefore be detected experimentally using, for example, the technique of time-resolved Faraday rotation.

0 citations0 reviewsNo code linkedOpen access
preprint2004arXiv

Coherent optical control of spin-spin interaction in doped semiconductors

We provide a theory of laser-induced interaction between spins localized by impurity centers in a semiconductor host. By solving exactly the problem of two localized spins interacting with one itinerant exciton, an analytical expression for the induced spin-spin interaction is given as a function of the spin separation, laser energy, and intensity. We apply the theory to shallow neutral donors (Si) and deep rare-earth magnetic impurities (Yb) in III-V semiconductors. When the photon energy approaches a resonance related to excitons bound to the impurities, the coupling between the localized spins increases, and may change from ferromagnetic to anti-ferromagnetic. This light-controlled spin interaction provides a mechanism for the quantum control of spins in semiconductors for quantum information processing; it suggests the realization of spin systems whose magnetic properties can be controlled by changing the strength and the sign of the spin-spin interaction.

0 citations0 reviewsNo code linkedOpen access