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Researcher profile

C. H. W. Barnes

C. H. W. Barnes contributes to research discovery and scholarly infrastructure.

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Published work

7 published item(s)

preprint2022arXiv

Engineering single donor detectors in doped silicon

We demonstrate the possibility of engineering a single donor transistor directly from a phosphorous doped quantum dot by making use of the intrinsic glassy behaviour of the structure as well as the complex electron dynamics during cooldown. Characterisation of the device at low temperatures and in magnetic field shows single donors can be electrostatically isolated near one of the tunnel barrier with either a single or a doubly occupancy. Such a model is well supported by capacitance-based simulations. Ability of using the D0 of such isolated donor as a charge detector is demonstrated by observing the charge stability diagram of a nearby and capacitively coupled semi-connected double quantum dot.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Long-range electronic reconstruction to a $d_{xz,yz}$-dominated Fermi surface below the LaAlO$_3$/SrTiO$_3$ interface

Low dimensionality, broken symmetry and easily-modulated carrier concentrations provoke novel electronic phase emergence at oxide interfaces. However, the spatial extent of such reconstructions - i.e. the interfacial &#34;depth&#34; - remains unclear. Examining LaAlO$_3$/SrTiO$_3$ heterostructures at previously unexplored carrier densities $n_{2D}\geq6.9\times10^{14}$ cm$^{-2}$, we observe a Shubnikov-de Haas effect for small in-plane fields, characteristic of an anisotropic 3D Fermi surface with preferential $d_{xz,yz}$ orbital occupancy extending over at least 100~nm perpendicular to the interface. Quantum oscillations from the 3D Fermi surface of bulk doped SrTiO$_3$ emerge simultaneously at higher $n_{2D}$. We distinguish three areas in doped perovskite heterostructures: narrow ($<20$ nm) 2D interfaces housing superconductivity and/or other emergent phases, electronically isotropic regions far ($>120$ nm) from the interface and new intermediate zones where interfacial proximity renormalises the electronic structure relative to the bulk.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Characterisation of Ferromagnetic Rings for Zernike Phase Plates using the Aharonov-Bohm effect

Holographic measurements on magnetised thin-film cobalt rings have demonstrated both onion and vortex states of magnetisation. For a ring in the vortex state, the difference between phases of electron paths that pass through the ring and those that travel outside it was found to agree very well with Aharonov-Bohm theory within measurement error. Thus the magnetic flux in thin-film rings of ferromagnetic material can provide the phase shift required for phase plates in transmission electron microscopy. When a ring of this type is used as a phase plate, scattered electrons will be intercepted over a radial range similar to the ring width. A cobalt ring of thickness 20 nm can produce a phase difference of pi/2 from a width of just under 30 nm, suggesting that the range of radial interception for this type of phase plate can be correspondingly small.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Magnetism in graphite oxide: The role of epoxy groups

We investigate the magnetism in graphite by controlled oxidation. Our approach renders graphite an insulator while maintaining its structure. Fourier transform infrared spectroscopy and X-ray absorption near edge structure spectra reveal that graphite oxide has epoxy groups on its surface and it is not thermally stable. Magnetic susceptibility data exhibit negative Curie temperature, field irreversibility, and slow relaxation. The magnetic properties diminish after the epoxy groups are destroyed. The overall results indicate the unexpected magnetism is associated with the presence of epoxy groups.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

On-demand single-electron transfer between distant quantum dots

Single-electron circuits of the future, consisting of a network of quantum dots, will require a mechanism to transport electrons from one functional part to another. For example, in a quantum computer[1] decoherence and circuit complexity can be reduced by separating qubit manipulation from measurement and by providing some means to transport electrons from one to the other.[2] Tunnelling between neighbouring dots has been demonstrated[3, 4] with great control, and the manipulation of electrons in single and double-dot systems is advancing rapidly.[5-8] For distances greater than a few hundred nanometres neither free propagation nor tunnelling are viable whilst maintaining confinement of single electrons. Here we show how a single electron may be captured in a surface acoustic wave minimum and transferred from one quantum dot to a second unoccupied dot along a long empty channel. The transfer direction may be reversed and the same electron moved back and forth over sixty times without error, a cumulative distance of 0.25 mm. Such on-chip transfer extends communication between quantum dots to a range that may allow the integration of discrete quantum information-processing components and devices.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Thickness-dependent magnetic properties of oxygen-deficient EuO

We have studied how the magnetic properties of oxygen-deficient EuO sputtered thin films vary as a function of thickness. The magnetic moment, measured by polarized neutron reflectometry, and the Curie temperature are found to decrease with reducing thickness. Our results indicate that the reduced number of nearest neighbors, band bending and the partial depopulation of the electronic states that carry the spins associated with the 4f orbitals of Eu are all contributing factors in the surface-induced change of the magnetic properties of EuO$_{1-x}$.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Disorder and electron interaction control in low-doped silicon metal-oxide-semiconductor field effect transistors

We fabricated silicon metal-oxide-semiconductor field effect transistors where an additional sodium-doped layer was incorporated into the oxide to create potential fluctuations at the Si-SiO2 interface. The amplitude of these fluctuations is controlled by both the density of ions in the oxide and their position relative to the Si-SiO2 interface. Owing to the high mobility of the ions at room temperature, it is possible to move them with the application of a suitable electric field. We show that, in this configuration, such a device can be used to control both the disorder and the electron-electron interaction strength at the Si-SiO2 interface.

0 citations0 reviewsNo code linkedOpen access