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Source author record

C. H. W. Barnes

C. H. W. Barnes appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mes-hallcond-mat.str-elcond-mat.mtrl-scicond-mat.supr-conphysics.ins-detquant-ph

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Published work

10 published item(s)

preprint2022arXiv

Engineering single donor detectors in doped silicon

We demonstrate the possibility of engineering a single donor transistor directly from a phosphorous doped quantum dot by making use of the intrinsic glassy behaviour of the structure as well as the complex electron dynamics during cooldown. Characterisation of the device at low temperatures and in magnetic field shows single donors can be electrostatically isolated near one of the tunnel barrier with either a single or a doubly occupancy. Such a model is well supported by capacitance-based simulations. Ability of using the D0 of such isolated donor as a charge detector is demonstrated by observing the charge stability diagram of a nearby and capacitively coupled semi-connected double quantum dot.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

An optimal single-electron charge qubit for solid-state double quantum dots

We report on an optimal single-electron charge qubit for a solid-state double quantum dot (DQD) system and analyse its dynamics under a time-dependent linear detuning, using GPU accelerated numerical solutions to the time-dependent Schrödinger equation. The optimal qubit is found to have basis states defined as the symmetric and antisymmetric linear combinations of the lowest energy bonding and anti-bonding states of the DQD at zero bias. In contrast to charge qubits defined by the two localised ground states of the uncoupled DQD, this choice of the basis causes the resulting dynamics to have a maximal overlap with an idealised two-state model. Our optimal qubit basis states are not localised to a single quantum dot and, as such, initialising the qubit requires a particular sequence of gate pulses to take the system from an initial fiducial state of the DQD to the logical $0$ or $1$. We determine this sequence using pulses that incorporate the expected experimental finite rise times. We also show how to perform arbitrary single qubit operations on the Bloch sphere using spin-echo type pulsing, allowing us to obtain any qubit state with at most two single pulses. Measurement of the optimal qubits is achieved by determining the probability of finding the electron in one of the dots.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Ground-state electronic structure of quasi-one-dimensional wires in semiconductor heterostructures

We apply density functional theory, in the local density approximation, to a quasi-one-dimensional electron gas in order to quantify the effect of Coulomb and correlation effects in modulating, and therefore patterning, the charge density distribution. Our calculations are presented specifically for surface-gate-defined quasi-one-dimensional quantum wires in a GaAs-AlGaAs heterostructure but we expect our results to apply more generally for other low dimensional semiconductor systems. We show that at high densities with strong confinement, screening of electrons in the direction transverse to the wire is efficient and density modulations are not visible. In the low-density, weak-confinement regime, the exchange-correlation potential induces small density modulations as the electrons are depleted from the wire. At the weakest confinements and lowest densities, the electron density splits into two rows thereby forming a pair of quantum wires that lie beneath the surface gates. An additional double-well external potential forms at very low density which enhances this row splitting phenomenon. We produce phase diagrams that show a transition between the presence of a single quantum wire in a split-gate structure and two quantum wires. We suggest that this phenomenon can be used to pattern and modulate the electron density in low-dimensional structures with particular application to systems where a proximity effect from a surface gate would be valuable.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Long-range electronic reconstruction to a $d_{xz,yz}$-dominated Fermi surface below the LaAlO$_3$/SrTiO$_3$ interface

Low dimensionality, broken symmetry and easily-modulated carrier concentrations provoke novel electronic phase emergence at oxide interfaces. However, the spatial extent of such reconstructions - i.e. the interfacial "depth" - remains unclear. Examining LaAlO$_3$/SrTiO$_3$ heterostructures at previously unexplored carrier densities $n_{2D}\geq6.9\times10^{14}$ cm$^{-2}$, we observe a Shubnikov-de Haas effect for small in-plane fields, characteristic of an anisotropic 3D Fermi surface with preferential $d_{xz,yz}$ orbital occupancy extending over at least 100~nm perpendicular to the interface. Quantum oscillations from the 3D Fermi surface of bulk doped SrTiO$_3$ emerge simultaneously at higher $n_{2D}$. We distinguish three areas in doped perovskite heterostructures: narrow ($<20$ nm) 2D interfaces housing superconductivity and/or other emergent phases, electronically isotropic regions far ($>120$ nm) from the interface and new intermediate zones where interfacial proximity renormalises the electronic structure relative to the bulk.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

The Vortex Signature of Discrete Ferromagnetic Dipoles at the LaAlO$_3$/SrTiO$_3$ Interface

A hysteretic in-plane magnetoresistance develops below the superconducting transition of LaAlO$_3$/SrTiO$_3$ interfaces for $\left|H_{/\!/}\right|<$ 0.15 T, independently of the carrier density or oxygen annealing. We show that this hysteresis arises from vortex depinning within a thin superconducting layer, in which the vortices are created by discrete ferromagnetic dipoles located solely above the layer. We find no evidence for finite-momentum pairing or bulk magnetism and hence conclude that ferromagnetism is strictly confined to the interface, where it competes with superconductivity.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Characterisation of Ferromagnetic Rings for Zernike Phase Plates using the Aharonov-Bohm effect

Holographic measurements on magnetised thin-film cobalt rings have demonstrated both onion and vortex states of magnetisation. For a ring in the vortex state, the difference between phases of electron paths that pass through the ring and those that travel outside it was found to agree very well with Aharonov-Bohm theory within measurement error. Thus the magnetic flux in thin-film rings of ferromagnetic material can provide the phase shift required for phase plates in transmission electron microscopy. When a ring of this type is used as a phase plate, scattered electrons will be intercepted over a radial range similar to the ring width. A cobalt ring of thickness 20 nm can produce a phase difference of pi/2 from a width of just under 30 nm, suggesting that the range of radial interception for this type of phase plate can be correspondingly small.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Magnetism in graphite oxide: The role of epoxy groups

We investigate the magnetism in graphite by controlled oxidation. Our approach renders graphite an insulator while maintaining its structure. Fourier transform infrared spectroscopy and X-ray absorption near edge structure spectra reveal that graphite oxide has epoxy groups on its surface and it is not thermally stable. Magnetic susceptibility data exhibit negative Curie temperature, field irreversibility, and slow relaxation. The magnetic properties diminish after the epoxy groups are destroyed. The overall results indicate the unexpected magnetism is associated with the presence of epoxy groups.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

On-demand single-electron transfer between distant quantum dots

Single-electron circuits of the future, consisting of a network of quantum dots, will require a mechanism to transport electrons from one functional part to another. For example, in a quantum computer[1] decoherence and circuit complexity can be reduced by separating qubit manipulation from measurement and by providing some means to transport electrons from one to the other.[2] Tunnelling between neighbouring dots has been demonstrated[3, 4] with great control, and the manipulation of electrons in single and double-dot systems is advancing rapidly.[5-8] For distances greater than a few hundred nanometres neither free propagation nor tunnelling are viable whilst maintaining confinement of single electrons. Here we show how a single electron may be captured in a surface acoustic wave minimum and transferred from one quantum dot to a second unoccupied dot along a long empty channel. The transfer direction may be reversed and the same electron moved back and forth over sixty times without error, a cumulative distance of 0.25 mm. Such on-chip transfer extends communication between quantum dots to a range that may allow the integration of discrete quantum information-processing components and devices.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Thickness-dependent magnetic properties of oxygen-deficient EuO

We have studied how the magnetic properties of oxygen-deficient EuO sputtered thin films vary as a function of thickness. The magnetic moment, measured by polarized neutron reflectometry, and the Curie temperature are found to decrease with reducing thickness. Our results indicate that the reduced number of nearest neighbors, band bending and the partial depopulation of the electronic states that carry the spins associated with the 4f orbitals of Eu are all contributing factors in the surface-induced change of the magnetic properties of EuO$_{1-x}$.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Disorder and electron interaction control in low-doped silicon metal-oxide-semiconductor field effect transistors

We fabricated silicon metal-oxide-semiconductor field effect transistors where an additional sodium-doped layer was incorporated into the oxide to create potential fluctuations at the Si-SiO2 interface. The amplitude of these fluctuations is controlled by both the density of ions in the oxide and their position relative to the Si-SiO2 interface. Owing to the high mobility of the ions at room temperature, it is possible to move them with the application of a suitable electric field. We show that, in this configuration, such a device can be used to control both the disorder and the electron-electron interaction strength at the Si-SiO2 interface.

0 citations0 reviewsNo code linkedOpen access