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C. Gürlich

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cond-mat.supr-con

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preprint2010arXiv

Critical current diffraction pattern of SIFS Josephson junctions with step-like F-layer

We present the latest generation of superconductor-insulator-ferromagnet-superconductor Josephson tunnel junctions with a step-like thickness of the ferromagnetic (F) layer. The F-layer thicknesses $d_1$ and $d_2$ in both halves were varied to obtain different combinations of positive and negative critical current densities $j_{c,1}$ and $j_{c,2}$ . The measured dependences of the critical current on applied magnetic field can be well described by a model which takes into account different critical current densities (obtained from reference junctions) and different net magnetization of the multidomain ferromagnetic layer in both halves.

preprint2010arXiv

Interference patterns of multifacet 20x(0-pi-) Josephson junctions with ferromagnetic barrier

We have realized multifacet Josephson junctions with periodically alternating critical current density (MJJs) using superconductor-insulator-ferromagnet-superconductor heterostructures. We show that anomalous features of critical current vs. applied magnetic field, observed also for other types of MJJs, are caused by a non-uniform flux density (parallel to the barrier) resulting from screening currents in the electrodes in the presence of a (parasitic) off-plane field component.

preprint2009arXiv

Visualizing supercurrents in ferromagnetic Josephson junctions with various arrangements of 0 and πsegments

Josephson junctions with ferromagnetic barrier can have positive or negative critical current depending on the thickness $d_F$ of the ferromagnetic layer. Accordingly, the Josephson phase in the ground state is equal to 0 (a conventional or 0 junction) or to $π$ ( $π$ junction). When 0 and $π$ segments are joined to form a "0- $π$ junction", spontaneous supercurrents around the 0- $π$ boundary can appear. Here we report on the visualization of supercurrents in superconductor-insulator-ferromagnet-superconductor (SIFS) junctions by low-temperature scanning electron microscopy (LTSEM). We discuss data for rectangular 0, $π$ , 0- $π$ , 0- $π$ -0 and 20 \times 0- $π$ junctions, disk-shaped junctions where the 0- $π$ boundary forms a ring, and an annular junction with two 0- $π$ boundaries. Within each 0 or $π$ segment the critical current density is fairly homogeneous, as indicated both by measurements of the magnetic field dependence of the critical current and by LTSEM. The $π$ parts have critical current densities $j_c^π$ up to $35\units{A/cm^2}$ at $T = 4.2\units{K}$, which is a record value for SIFS junctions with a NiCu F-layer so far. We also demonstrate that SIFS technology is capable to produce Josephson devices with a unique topology of the 0- $π$ boundary.

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