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Researcher profile

H. Huhtinen

H. Huhtinen contributes to research discovery and scholarly infrastructure.

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cond-mat.mtrl-sciphysics.app-ph

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Published work

3 published item(s)

preprint2021arXiv

Proton irradiation effects on metal-YBCO interfaces

10 MeV proton-irradiation effects on a YBCO-based test structure were analyzed by measuring its current-voltage (IV) characteristics for different cumulated fluences. For fluences of up to $\sim$80$\cdot$10$^9$~p/cm$^2$ no changes in the electrical behavior of the device were observed, while for a fluence of $\sim$~300$\cdot$10$^9~$ p/cm$^2$ it becomes less conducting. A detailed analysis of the room temperature IV characteristics based on the $γ$ power exponent parameter [$γ=dLn(I)/dLn(V)$] allowed us to reveal the main conduction mechanisms as well as to establish the equivalent circuit model of the device. The changes produced in the electrical behavior, in accordance with Monte Carlo TRIM simulations, suggest that the main effect induced by protons is the displacement of oxygen atoms within the YBCO lattice, particularly from oxygen-rich to oxygen-poor areas, where they become trapped.

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preprint2020arXiv

Electrical conduction mechanisms of metal / high-Tc superconductor (YBCO) interfaces

Current-voltage characteristics of Au~/~YBa$_2$Cu$_3$O$_{7-δ}$ interfaces (Au/YBCO), built on optimally-doped YBCO thin films, grown by pulsed laser deposition, were measured as a function of temperature in the 50 K to 270 K range, for two different resistance states. A non-trivial equivalent circuit model is proposed, which reveals the existence of a highly inhomogeneous scenario composed by two complex layers: one presenting both a non-linear Poole-Frenkel conduction as well as Variable Range Hopping localization effects (probably associated with YBa$_2$Cu$_3$O$_{6}$) mixed with a minor metallic phase, while the other is also composed by a mixture of YBCO with different oxygen contents, where a metallic ohmic phase still percolates. A microscopic description of the effects produced by the resistance switching is given, showing the evolution of carrier traps, localization effects and dielectric behavior for each state. The dielectric behavior is interpreted in terms of a Maxwell-Wagner scenario.

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preprint2020arXiv

YBCO-based non-volatile ReRAM tested in Low Earth Orbit

An YBCO-based test structure corresponding to the family of ReRAM devices associated with the valence change mechanism is presented. We have characterized its electrical response previous to its lift-off to a Low Earth Orbit (LEO) using standard electronics and also with the dedicated LabOSat-01 controller. Similar results were obtained in both cases. After about 200 days at LEO on board a small satellite, electrical tests started on the memory device using the LabOSat-01 controller. We discuss the results of the first 150 tests, performed along a 433-day time interval in space. The memory device remained operational despite the hostile conditions that involved launching, lift-off vibrations, permanent thermal cycling and exposure to ionizing radiation, with doses 3 orders of magnitude greater than the usual ones on Earth. The device showed resistive switching and IV characteristics similar to those measured on Earth, although with changes that follow a smooth drift in time. A detailed study of the electrical transport mechanisms, based on previous models that indicate the existence of various conducting mechanisms through the metal-YBCO interface showed that the observed drift can be associated with a local temperature drift at the LabOSat controller, with no clear evidence that allows determining changes in the underlying microscopic factors. These results show the reliability of complex-oxide non-volatile ReRAM-based devices in order to operate under all the hostile conditions encountered in space-borne applications.

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